A study on the growth mechanism and gas diffusion barrier property of homogeneously mixed silicon–tin oxide by atomic layer deposition

2021 ◽  
Author(s):  
Ju-Hwan Han ◽  
Dong-Yeon Kim ◽  
Seunghwan Lee ◽  
Hae Lin Yang ◽  
Byung Ho Park ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Growth Mechanism ◽  
Tin Oxide ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Gas Diffusion ◽  
Barrier Property ◽  
Layer Deposition

scholarly journals UV-enhanced atomic layer deposition of Al2O3 thin films at low temperature for gas-diffusion barriers

RSC Advances ◽  
2017 ◽  
Vol 7 (10) ◽  
pp. 5601-5609 ◽  
Author(s):  
Kwan Hyuck Yoon ◽  
Hongbum Kim ◽  
Yong-Eun Koo Lee ◽  
Nabeen K. Shrestha ◽  
Myung Mo Sung
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Deposition Temperature ◽  
Atomic Layer ◽  
Gas Diffusion ◽  
Diffusion Barriers ◽  
Layer Deposition ◽  
Low Deposition Temperature

We present UV-ALD as a promising approach to fabricate effective gas-diffusion barrier thin films at low deposition temperature (40 °C).

scholarly journals Correction: Enhanced photoelectrochemical water oxidation via atomic layer deposition of TiO2on fluorine-doped tin oxide nanoparticle films

Nanoscale ◽  
2015 ◽  
Vol 7 (28) ◽  
pp. 12226-12226 ◽  
Author(s):  
Isvar A. Cordova ◽  
Qing Peng ◽  
Isa L. Ferrall ◽  
Adam J. Rieth ◽  
Paul G. Hoertz ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Tin Oxide ◽  
Water Oxidation ◽  
Atomic Layer ◽  
Nanoparticle Films ◽  
Layer Deposition ◽  
Oxide Nanoparticle ◽  
Photoelectrochemical Water Oxidation

The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum-Based Thin Films for Copper Diffusion Barrier Applications

2003 ◽  
Vol 766 ◽  
Author(s):  
Degang Cheng ◽  
Eric T. Eisenbraun
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Copper Metallization ◽  
X Ray ◽  
Layer Deposition ◽  
Electron Spectrometry

AbstractA plasma-enhanced atomic layer deposition (PEALD) process for the growth of tantalumbased compounds is employed in integration studies for advanced copper metallization on a 200- mm wafer cluster tool platform. This process employs terbutylimido tris(diethylamido)tantalum (TBTDET) as precursor and hydrogen plasma as the reducing agent at a temperature of 250°C. Auger electron spectrometry, X-ray photoelectron spectrometry, and X-ray diffraction analyses indicate that the deposited films are carbide rich, and possess electrical resistivity as low as 250νΔcm, significantly lower than that of tantalum nitride deposited by conventional ALD or CVD using TBTDET and ammonia. PEALD Ta(C)N also possesses a strong resistance to oxidation, and possesses diffusion barrier properties superior to those of thermally grown TaN.

Atomically Thin Indium-Tin-Oxide Transistors Enabled by Atomic Layer Deposition

2021 ◽  
pp. 1-6
Author(s):  
Zhuocheng Zhang ◽  
Yaoqiao Hu ◽  
Zehao Lin ◽  
Mengwei Si ◽  
Adam Charnas ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Atomic Layer ◽  
Layer Deposition

Some Insights into Atomic Layer Deposition of MoNx Using Mo(CO)6 and NH3 and Its Diffusion Barrier Application

2019 ◽  
Vol 31 (20) ◽  
pp. 8338-8350 ◽  
Author(s):  
Tae Hyun Kim ◽  
Dip K. Nandi ◽  
Rahul Ramesh ◽  
Seung-Min Han ◽  
Bonggeun Shong ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Layer Deposition

Atomic Layer Deposition of Lithium-Silicon-Tin Oxide Nanofilms for High Performance Thin Film Batteries Anodes

2020 ◽  
Vol 299 ◽  
pp. 1058-1063
Author(s):  
Denis Nazarov ◽  
Ilya Mitrofanov ◽  
Maxim Yu. Maximov
Keyword(s):  
Thin Film ◽  
Stainless Steel ◽  
Atomic Layer Deposition ◽  
Tin Oxide ◽  
Oxygen Plasma ◽  
Atomic Layer ◽  
Cycling Performance ◽  
Spectral Ellipsometry ◽  
X Ray ◽  
Layer Deposition

Tin oxide is the most promising material for thin film anodes of Li-ion batteries due to its cycling performance and high theoretical capacity. It is assumed that lithium-tin oxide can demonstrate even higher performance. Lithium-silicon-tin oxide nanofilms were prepared by atomic layer deposition (ALD), using the lithium bis (trimethylsilyl) amide (LiHMDS), tetraethyltin (TET) as a metal containing reagents and ozone or water or oxygen plasma as counter-reactants. Monocrystalline silicon (100) and stainless steel (316SS) were used as supports. The thicknesses of the nanofilms were measured by spectral ellipsometry (SE) and scanning electron microscopy (SEM). It was found that oxygen plasma is the most optimal ALD counter-reactant. The composition and structure were studied by Time-of-Flight Secondary Ion Mass Spectroscopy (ToF-SIMS), X-ray Photoelectron Spectroscopy (XPS) and X-ray diffraction (XRD). The nanofilms contain silicon as impurity, whose source is the ALD precursor (LiHMDS). The nanofilms deposited on stainless steel have shown the high Coulombic efficiency (99.1-99.8%) and cycling performance at a relatively high voltage (0.01 to 2.0V).

Conformal SnOx heterojunction coatings for stabilized photoelectrochemical water oxidation using arrays of silicon microcones

2020 ◽  
Vol 8 (18) ◽  
pp. 9292-9301
Author(s):  
Ivan A. Moreno-Hernandez ◽  
Sisir Yalamanchili ◽  
Harold J. Fu ◽  
Harry A. Atwater ◽  
Bruce S. Brunschwig ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Oxide Layer ◽  
Tin Oxide ◽  
Water Oxidation ◽  
Surface Recombination ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Photoelectrochemical Water Oxidation

A protective tin oxide layer formed by atomic-layer deposition limits surface recombination at n-Si surfaces and produces ∼620 mV of photovoltage on planar n-Si photoanodes. The layer conformally coats structures such as Si microcone arrays.

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