Orogenic movement mechanism for the formation of symmetrical relief features in copper nitride thin films

Author(s):  
A. L. Ji ◽  
Y. Du ◽  
C. R. Li ◽  
Y. Q. Wang ◽  
Z. X. Cao
1995 ◽  
Vol 78 (6) ◽  
pp. 4104-4107 ◽  
Author(s):  
Toshiro Maruyama ◽  
Tomonori Morishita

2001 ◽  
Vol 169-170 ◽  
pp. 358-361 ◽  
Author(s):  
Toshikazu Nosaka ◽  
Masaaki Yoshitake ◽  
Akio Okamoto ◽  
Soichi Ogawa ◽  
Yoshikazu Nakayama

1996 ◽  
Vol 69 (7) ◽  
pp. 890-891 ◽  
Author(s):  
Toshiro Maruyama ◽  
Tomonori Morishita

2008 ◽  
Vol 310 (19) ◽  
pp. 4362-4367 ◽  
Author(s):  
N. Gordillo ◽  
R. Gonzalez-Arrabal ◽  
M.S. Martin-Gonzalez ◽  
J. Olivares ◽  
A. Rivera ◽  
...  

2014 ◽  
Vol 636 ◽  
pp. 29-32
Author(s):  
Xing Ao Li ◽  
Rong Yang ◽  
Wen Jie Liu ◽  
Jia Han ◽  
Jian Bo Yang ◽  
...  

Ni-doped copper nitride films have been prepared by co-sputtering of Ni and Cu targets. The addition of Ni to Cu3N films reduced the intensity of the (111) diffraction peak, and lead a little angular shifts of the peaks. The films showed a large difference in reflectance in the infrared and visible before and after thermal decomposition, which is applicable to optical recording media. The films change from a semiconductor to a conductor with the increased ratio of Ni in Cu3N films.


2005 ◽  
Vol 16 (10) ◽  
pp. 2092-2095 ◽  
Author(s):  
Ailing Ji ◽  
Chaorong Li ◽  
Yun Du ◽  
Libo Ma ◽  
Rui Song ◽  
...  
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