Si metal-oxide-semiconductor devices with high κ HfO[sub 2] fabricated using a novel MBE template approach followed by atomic layer deposition

2008 ◽  
Vol 26 (3) ◽  
pp. 1178 ◽  
Author(s):  
C. H. Pan ◽  
J. Kwo ◽  
K. Y. Lee ◽  
W. C. Lee ◽  
L. K. Chu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Semiconductor Devices ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Layer Deposition

Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition

2010 ◽  
Vol 107 (10) ◽  
pp. 106104 ◽  
Author(s):  
D. Gregušová ◽  
R. Stoklas ◽  
Ch. Mizue ◽  
Y. Hori ◽  
J. Novák ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Trap States ◽  
Semiconductor Structures ◽  
Layer Deposition

GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO2 gate dielectric: Fabrication and characterization

2007 ◽  
Vol 91 (19) ◽  
pp. 193503 ◽  
Author(s):  
D. Shahrjerdi ◽  
D. I. Garcia-Gutierrez ◽  
T. Akyol ◽  
S. R. Bank ◽  
E. Tutuc ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Layer Deposition ◽  
Fabrication And Characterization
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