Si metal-oxide-semiconductor devices with high κ HfO[sub 2] fabricated using a novel MBE template approach followed by atomic layer deposition
2008 ◽
Vol 26
(3)
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pp. 1178
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2011 ◽
Vol 14
(5)
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pp. G27
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2008 ◽
Vol 47
(4)
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pp. 2345-2348
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2009 ◽
Vol 48
(4)
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pp. 04C009
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2004 ◽
Vol 33
(8)
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pp. 912-915
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