Low temperature atomic layer deposition of high-k dielectric stacks for scaled metal-oxide-semiconductor devices

Thin Solid Films ◽

10.1016/j.tsf.2009.03.190 ◽

2009 ◽

Vol 517 (18) ◽

pp. 5543-5547 ◽

Author(s):

Ole Bethge ◽

Stephan Abermann ◽

Christoph Henkel ◽

Emmerich Bertagnolli

Keyword(s):

Low Temperature ◽

Atomic Layer Deposition ◽

Metal Oxide ◽

Semiconductor Devices ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition ◽

High K ◽

High K Dielectric

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TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation Layer

Electrochemical and Solid-State Letters ◽

10.1149/1.3559770 ◽

2011 ◽

Vol 14 (5) ◽

pp. G27 ◽

Author(s):

Qi Xie ◽

Jan Musschoot ◽

Marc Schaekers ◽

Matty Caymax ◽

Annelies Delabie ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Semiconductor Devices ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Layer Deposition

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Formation and characterization of nanometer scale metal-oxide-semiconductor structures on GaAs using low-temperature atomic layer deposition

Applied Physics Letters ◽

10.1063/1.1954902 ◽

2005 ◽

Vol 87 (1) ◽

pp. 013501 ◽

Author(s):

P. D. Ye ◽

G. D. Wilk ◽

E. E. Tois ◽

Jian Jim Wang

Keyword(s):

Low Temperature ◽

Atomic Layer Deposition ◽

Metal Oxide ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Nanometer Scale ◽

Semiconductor Structures ◽

Layer Deposition

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Structural and Electrical Analysis of Thin Interface Control Layer Effects of MgO or Al2O3 Deposited by Atomic Layer Deposition, Incorporated at the High-k/IIIV Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate in Metal-Oxide-Semiconductor Capacitors

ECS Meeting Abstracts ◽

10.1149/ma2010-02/20/1413 ◽

2010 ◽

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Control ◽

Layer Deposition ◽

High K ◽

Electrical Analysis ◽

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Si metal-oxide-semiconductor devices with high κ HfO[sub 2] fabricated using a novel MBE template approach followed by atomic layer deposition

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2912087 ◽

2008 ◽

Vol 26 (3) ◽

pp. 1178 ◽

Author(s):

C. H. Pan ◽

J. Kwo ◽

K. Y. Lee ◽

W. C. Lee ◽

L. K. Chu ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Semiconductor Devices ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition

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Threshold Voltage Modulation Technique using Fluorine Treatment through Atomic Layer Deposition TiN Suitable for Complementary Metal–Oxide–Semiconductor Devices

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2345 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2345-2348 ◽

Author(s):

Kaori Tai ◽

Shinpei Yamaguchi ◽

Kazuki Tanaka ◽

Tomoyuki Hirano ◽

Itaru Oshiyama ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Threshold Voltage ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Modulation Technique ◽

Layer Deposition

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Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition

Journal of Applied Physics ◽

10.1063/1.3428492 ◽

2010 ◽

Vol 107 (10) ◽

pp. 106104 ◽

Author(s):

D. Gregušová ◽

R. Stoklas ◽

Ch. Mizue ◽

Y. Hori ◽

J. Novák ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Trap States ◽

Semiconductor Structures ◽

Layer Deposition

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Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric

Applied Physics Letters ◽

10.1063/1.3007978 ◽

2008 ◽

Vol 93 (19) ◽

pp. 193504 ◽

Author(s):

Rahul Suri ◽

Bongmook Lee ◽

Daniel J. Lichtenwalner ◽

Nivedita Biswas ◽

Veena Misra

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Gate Dielectric ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Layer Deposition

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GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO2 gate dielectric: Fabrication and characterization

Applied Physics Letters ◽

10.1063/1.2806190 ◽

2007 ◽

Vol 91 (19) ◽

pp. 193503 ◽

Author(s):

D. Shahrjerdi ◽

D. I. Garcia-Gutierrez ◽

T. Akyol ◽

S. R. Bank ◽

E. Tutuc ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Gate Dielectric ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Fabrication And Characterization

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The Influence of Hf-Composition on Atomic Layer Deposition HfSiON Gated Metal–Oxide–Semiconductor Field-Effect Transistors after Channel-Hot-Carrier Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c009 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C009 ◽

Author(s):

Shuang-Yuan Chen ◽

Hung-Wen Chen ◽

Chuan-Hsi Liu ◽

Li-Wei Cheng

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Layer Deposition ◽

Hot Carrier Stress

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Well-behaved metal–oxide–semiconductor capacitor characteristics of hafnium silicate films deposited in an atomic layer deposition mode by vapor–liquid hybrid deposition process

Applied Physics Letters ◽

10.1063/1.1762977 ◽

2004 ◽

Vol 84 (25) ◽

pp. 5097-5099 ◽

Author(s):

Y. Xuan ◽

D. Hojo ◽

T. Yasuda

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Atomic Layer ◽

Deposition Process ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hafnium Silicate ◽

Layer Deposition ◽

Metal Oxide Semiconductor Capacitor ◽

Deposition Mode

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