scholarly journals Modeling on drain current of high-k gate dielectric fully-depleted nanoscale germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistor

2014 ◽  
Vol 63 (23) ◽  
pp. 237304
Author(s):  
Bai Yu-Rong ◽  
Xu Jing-Ping ◽  
Liu Lu ◽  
Fan Min-Min ◽  
Huang Yong ◽  
...  
Crystals ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 673
Author(s):  
Jing-Jenn Lin ◽  
Ji-Hua Tao ◽  
You-Lin Wu

An organic ferroelectric capacitor, using polyvinylidene difluoride (PVDF) as the dielectric, was fabricated. By connecting the PVDF capacitor in series to the gate of a commercially purchased metal-oxide–semiconductor field-effect transistor (MOSFET), drain current (ID)–drain voltage (VD) characteristics and drain current (ID)–gate voltage (VG) characteristics were measured. In addition, the subthreshold slopes of the MOSFET were determined from the ID–VG curves. It was found that the subthreshold slope could be effectively reduced by 23% of its original value when the PVDF capacitor was added to the gate of the MOSFET.


2004 ◽  
Vol 85 (7) ◽  
pp. 1286-1288 ◽  
Author(s):  
Se Jong Rhee ◽  
Chang Yong Kang ◽  
Chang Seok Kang ◽  
Rino Choi ◽  
Chang Hwan Choi ◽  
...  

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