High aspect ratio iridescent three-dimensional metal–insulator–metal capacitors using atomic layer deposition

<p>ABSTRACT: Atomic layer deposition (ALD) raises global interest through its unparalleled conformality. This work describes new microscopic lateral high-aspect-ratio (LHAR) test structures for conformality analysis of ALD. The LHAR structures are made of silicon and consist of rectangular channels supported by pillars. Extreme aspect ratios even beyond 10 000:1 enable investigations where the adsorption front does not penetrate to the end of the channel, thus exposing the saturation profile for detailed analysis. We use the archetypical trimethylaluminum (TMA)-water ALD process to grow alumina as a test vehicle to demonstrate the applicability, repeatability and reproducibility of the saturation profile measurement and to provide a benchmark for future saturation profile studies. Through varying the TMA reaction and purge times, we obtained new information on the surface chemistry characteristics and the chemisorption kinetics of this widely studied ALD process. We propose new saturation profile related classifications and terminology. </p>

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Atomic Layer Deposition of High-k and Nanolaminate Dielectrics for Transparent Thin Film Transistors and Metal/Insulator/Metal Tunnel Diodes

ECS Meeting Abstracts ◽

10.1149/ma2011-01/22/1369 ◽

2011 ◽

Keyword(s):

Thin Film ◽

Atomic Layer Deposition ◽

Thin Film Transistors ◽

Atomic Layer ◽

Tunnel Diodes ◽

Metal Insulator ◽

Layer Deposition ◽

High K ◽

Metal Insulator Metal

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Comparative study and characterization of atomic layer deposition Al2O3 films as metal-insulator-metal capacitor dielectric for GaAs hetero-junction bipolar transistor technology

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.5112773 ◽

2019 ◽

Vol 37 (5) ◽

pp. 050903

Author(s):

Jiro Yota ◽

Mehran Janani ◽

Hal M. Banbrook ◽

Patrick Rabinzohn ◽

Markus Bosund

Keyword(s):

Atomic Layer Deposition ◽

Comparative Study ◽

Atomic Layer ◽

Bipolar Transistor ◽

Metal Insulator ◽

Layer Deposition ◽

Metal Insulator Metal ◽

Al2o3 Films

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High-voltage metal-insulator-metal capacitor based on crystalline HfAlOxfilm grown by atomic layer deposition

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.5054848 ◽

2019 ◽

Vol 37 (1) ◽

pp. 011209 ◽

Cited By ~ 1

Author(s):

Michael Lisiansky ◽

Inna Popov ◽

Vladimir Uvarov ◽

Valentina Korchnoy ◽

Boris Meyler ◽

...

Keyword(s):

Atomic Layer Deposition ◽

High Voltage ◽

Atomic Layer ◽

Metal Insulator ◽

Layer Deposition ◽

Metal Insulator Metal

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Atomic Layer Deposition of GdCoO3 and Gd0.9Ca0.1CoO3

Materials ◽

10.3390/ma13010024 ◽

2019 ◽

Vol 13 (1) ◽

pp. 24

Author(s):

Marion Duparc ◽

Henrik Hovde Sønsteby ◽

Ola Nilsen ◽

Anja Olafsen Sjåstad ◽

Helmer Fjellvåg

Keyword(s):

Thin Films ◽

Aspect Ratio ◽

Atomic Layer Deposition ◽

High Aspect Ratio ◽

High Surface ◽

High Surface Area ◽

Atomic Layer ◽

Oxidation Catalysis ◽

Post Annealing ◽

Layer Deposition

Thin films of the catalytically interesting ternary and quaternary perovskites GdCoO3 and Gd0.9Ca0.1CoO3 are fabricated by atomic layer deposition using metal β-diketonates and ozone as precursors. The resulting thin films are amorphous as deposited and become single-oriented crystalline on LaAlO3(100) and YAlO3(100/010) after post-annealing at 650 °C in air. The crystal orientations of the films are tunable by choice and the orientation of the substrate, mitigated through the interface via solid face epitaxy upon annealing. The films exhibit no sign of Co2+. Additionally, high-aspect-ratio Si(100) substrates were used to document the suitability of the developed process for the preparation of coatings on more complex, high-surface-area structures. We believe that coatings of GdCoO3 and Gd1−xCaxCoO3 may find applications within oxidation catalysis.

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