Room temperature atomic layerlike deposition of ZnS on organic thin films: Role of substrate functional groups and precursors

2015 ◽  
Vol 33 (5) ◽  
pp. 05E106 ◽  
Author(s):  
Zhiwei Shi ◽  
Amy V. Walker
Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 623
Author(s):  
Monika Gupta ◽  
Huzein Fahmi Hawari ◽  
Pradeep Kumar ◽  
Zainal Arif Burhanudin ◽  
Nelson Tansu

The demand for carbon dioxide (CO2) gas detection is increasing nowadays. However, its fast detection at room temperature (RT) is a major challenge. Graphene is found to be the most promising sensing material for RT detection, owing to its high surface area and electrical conductivity. In this work, we report a highly edge functionalized chemically synthesized reduced graphene oxide (rGO) thin films to achieve fast sensing response for CO2 gas at room temperature. The high amount of edge functional groups is prominent for the sorption of CO2 molecules. Initially, rGO is synthesized by reduction of GO using ascorbic acid (AA) as a reducing agent. Three different concentrations of rGO are prepared using three AA concentrations (25, 50, and 100 mg) to optimize the material properties such as functional groups and conductivity. Thin films of three different AA reduced rGO suspensions (AArGO25, AArGO50, AArGO100) are developed and later analyzed using standard FTIR, XRD, Raman, XPS, TEM, SEM, and four-point probe measurement techniques. We find that the highest edge functionality is achieved by the AArGO25 sample with a conductivity of ~1389 S/cm. The functionalized AArGO25 gas sensor shows recordable high sensing properties (response and recovery time) with good repeatability for CO2 at room temperature at 500 ppm and 50 ppm. Short response and recovery time of ~26 s and ~10 s, respectively, are achieved for 500 ppm CO2 gas with the sensitivity of ~50 Hz/µg. We believe that a highly functionalized AArGO CO2 gas sensor could be applicable for enhanced oil recovery, industrial and domestic safety applications.


2004 ◽  
Vol 95 (1) ◽  
pp. 219-225 ◽  
Author(s):  
Jung-Kun Lee ◽  
Young Hyun Lee ◽  
Kug Sun Hong ◽  
Jin-Wook Jang

2020 ◽  
Vol 846 ◽  
pp. 156368
Author(s):  
Mohammad Shahnawaze Ansari ◽  
Mohd Hafiz Dzarfan Othman ◽  
Mohammad Omaish Ansari ◽  
Sana Ansari ◽  
Huda Abdullah ◽  
...  

1998 ◽  
Vol 526 ◽  
Author(s):  
R. Kubo ◽  
H. Xu ◽  
Y. Yoshino ◽  
M. Okuyama

AbstractBa1-xSrxTiO3 thin films have been deposited on Pt/Ti/SiO2/Si substra by the pulsed ArF laser deposition method. Deposition conditions, such as ambient gas and substrt temperatze, have been optmized to rrxove crystallinepropesty. Fe oelectric p e phasehasbeenobtainod ithe BSTthin filns deposited above 500°C in Q2 gas havingpressure ofabout 13Pa. Using N2O gas instead of O2 gas improved the crystallinity, because highly chemical active oxygen radicals produced due to ultraviolet inadiation of the laser. Doping of Bi ranging around 2% fills of the role of decrease leakage current of BST thin films. Temperature dependence of the dielectric constant (εr) shows a sharp change, peaking aroumd room temperature. The peak point exists below 25°C in the ratio of Ba/Sr=1.1 film, and shills above 50°C in Ba/Sr=5.7 film. When the Ba/Sr ratio is 1.4 the dielectric peak exists near 27°C and is very sharp. The maxinium differentW rate of dielectric constanttversus temperature is the largest in Ba/Sr=1.4 film and is about 100K-1. This value is equivalent to apyroelectric coefficient of 1.8 × 10-7 C/cm2K, which is almost the same as that of LiTaO3 single crystl, a typical pyroelectric material.


2005 ◽  
Vol 312 (1-3) ◽  
pp. 1-9 ◽  
Author(s):  
E. Orhan ◽  
M. Anicete-Santos ◽  
M.A.M.A. Maurera ◽  
F.M. Pontes ◽  
C.O. Paiva-Santos ◽  
...  

2019 ◽  
Vol 294 ◽  
pp. 17-24 ◽  
Author(s):  
Shrouk E. Zaki ◽  
Mohamed A. Basyooni ◽  
Mohamed Shaban ◽  
Mohamed Rabia ◽  
Yasin Ramazan Eker ◽  
...  

RSC Advances ◽  
2015 ◽  
Vol 5 (69) ◽  
pp. 55648-55657 ◽  
Author(s):  
M. Younas ◽  
Junying Shen ◽  
Mingquan He ◽  
R. Lortz ◽  
Fahad Azad ◽  
...  

Room temperature ferromagnetism (FM) of these thin film samples are highly tuneable by the simultaneous presence of CuO nanophases and multivalent Cu and Vö concentrations.


2018 ◽  
Vol 62 ◽  
pp. 102-106
Author(s):  
A. Sassella ◽  
L. Raimondo ◽  
L. Fazi ◽  
S. Trabattoni ◽  
B. Bonanni ◽  
...  

2011 ◽  
Vol 2011 ◽  
pp. 1-6 ◽  
Author(s):  
Ala J. Al-Douri ◽  
F. Y. Al-Shakily ◽  
Abdalla A. Alnajjar ◽  
Maysoon F. A. Alias

Films of CdTe pure and doped with various atomic percentages of Al and Sb (0.5, 1.5 & 2.5) were prepared, and their electrical properties were investigated. The films were prepared by thermal evaporation on glass substrates at two substrate temperatures (Ts=RT& 423 K). The results showed that the conduction phenomena of all the investigated CdTe thin films on glass substrates are caused by two distinct mechanisms. Room temperature DC conductivity increases by a factor of four for undoped CdTe thin films asTsincreases and by 1-2 orders of magnitude with increasing dopant percentage of Al and Sb. In general, films doped with Sb are more efficient than Al-doped films. The activation energy (Ea2) decreases with increasingTsand dopant percentage for both Al and Sb. Undoped CdTe films deposited at RT are p-type convert to n-type with increasingTsand upon doping with Al at more than 0.5%. The carrier concentration decreases asTsincreases while it increases with increasing dopant percentage. Hall mobility decreases more than three times as Al increases whereas it increases about one order of magnitude with increasing Sb percentage in CdTe thin films deposited at 423 K and RT, respectively.


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