Influence of Si precursor type on the surface roughening of SiGe epitaxial layers deposited by ultrahigh vacuum chemical vapor deposition method
2017 ◽
Vol 35
(4)
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pp. 041403
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2011 ◽
Vol 54
(6)
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pp. 346-352
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Epitaxial Si on Al2O3Films Grown with O2Gas by the Ultrahigh-Vacuum Chemical Vapor Deposition Method
1998 ◽
Vol 37
(Part 1, No. 3B)
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pp. 1285-1288
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2012 ◽
Vol 27
(1)
◽
pp. 33-37
◽
2004 ◽
Vol 110
(1)
◽
pp. 34-37
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