Radical analysis and residence-time effect of silicon nitride atomic layer deposition processes with trisilylamine and NH3 plasmas

2020 ◽  
Vol 13 (6) ◽  
pp. 066002
Author(s):  
Sun Jung Kim ◽  
Sang Heon Yong ◽  
Heeyeop Chae
Keyword(s):  
Silicon Nitride ◽  
Atomic Layer Deposition ◽  
Residence Time ◽  
Atomic Layer ◽  
Time Effect ◽  
Layer Deposition ◽  
Deposition Processes

scholarly journals A modular reactor design forin situsynchrotron x-ray investigation of atomic layer deposition processes

2015 ◽  
Vol 86 (11) ◽  
pp. 113901 ◽  
Author(s):  
Jeffrey A. Klug ◽  
Matthew S. Weimer ◽  
Jonathan D. Emery ◽  
Angel Yanguas-Gil ◽  
Sönke Seifert ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Reactor Design ◽  
X Ray ◽  
Layer Deposition ◽  
Deposition Processes

Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study

2012 ◽  
Vol 30 (1) ◽  
pp. 01A115 ◽  
Author(s):  
Maarit Kariniemi ◽  
Jaakko Niinistö ◽  
Marko Vehkamäki ◽  
Marianna Kemell ◽  
Mikko Ritala ◽  
...  
Keyword(s):  
Experimental Study ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Remote Plasma ◽  
Layer Deposition ◽  
Deposition Processes

Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride

RSC Advances ◽  
2016 ◽  
Vol 6 (72) ◽  
pp. 68515-68524 ◽  
Author(s):  
Luchana L. Yusup ◽  
Jae-Min Park ◽  
Yong-Ho Noh ◽  
Sun-Jae Kim ◽  
Won-Jun Lee ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Surface Sites ◽  
Thermodynamics And Kinetics ◽  
Layer Deposition ◽  
Kinetics Of

The reactivity of surface sites plays a very important role to determine the thermodynamics and kinetics of ALD processes.

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