Magnetotransport and far‐infrared magneto‐optical studies of molecular‐beam epitaxially grown HgTe

1988 ◽  
Vol 6 (4) ◽  
pp. 2775-2778 ◽  
Author(s):  
J. R. Meyer ◽  
C. A. Hoffman ◽  
F. J. Bartoli ◽  
J. M. Perez ◽  
J. E. Furneaux ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Far Infrared ◽  
Optical Studies

THE STUDY OF Pd SCHOTTKY CONTACT ON POROUS GaN FOR UV METAL–SEMICONDUCTOR–METAL (MSM) PHOTODETECTORS

2007 ◽  
Vol 16 (04) ◽  
pp. 497-503 ◽  
Author(s):  
L. S. CHUAH ◽  
Z. HASSAN ◽  
H. ABU HASSAN
Keyword(s):  
Molecular Beam Epitaxy ◽  
Tensile Stress ◽  
Molecular Beam ◽  
Schottky Contact ◽  
Nitrogen Plasma ◽  
Porous Sample ◽  
Optical Studies ◽  
High Quality ◽  
Metal Semiconductor Metal ◽  
Msm Photodetectors

High quality unintentionally doped n-type GaN layers were grown on Si (111) substrate using AlN (about 200 nm) as buffer layer by radio frequency (RF) nitrogen plasma-assisted molecular beam epitaxy (MBE). This paper presents the structural and optical studies of porous GaN sample compared to the corresponding as-grown GaN. Metal–semiconductor–metal (MSM) photodiode was fabricated on the samples. For as-grown GaN-based MSM, the detector shows a sharp cut-off wavelength at 362 nm, with a maximum responsivity of 0.254 A/W achieved at 360 nm. For porous GaN MSM detector, a sharp cut-off wavelength at 360 nm with a maximum responsivity of 0.655 A/W was achieved at 359 nm. Both the detectors show a little decrease in responsivity in the UV spectral region. The MSM photodiode based on porous GaN shows enhanced (2×) magnitude of responsivity relative to the as-grown GaN MSM photodiode. Enhancement of responsivity can be attributed to the relaxation of tensile stress and reduction of surface pit density in the porous sample.

scholarly journals Far-infrared transmission in GaN, AlN, and AlGaN thin films grown by molecular beam epitaxy

2008 ◽  
Vol 104 (3) ◽  
pp. 033544 ◽  
Author(s):  
J. Ibáñez ◽  
S. Hernández ◽  
E. Alarcón-Lladó ◽  
R. Cuscó ◽  
L. Artús ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Far Infrared ◽  
Infrared Transmission

Preparation and Properties of Tourmaline/Chitosan Composite Powder

2013 ◽  
Vol 850-851 ◽  
pp. 132-135
Author(s):  
Jun Feng Li ◽  
Liang Zhao Zhong ◽  
Wen Qiang Chao ◽  
Yin Zhang ◽  
Jian Gang Xiao ◽  
...  
Keyword(s):  
Composite Powder ◽  
Molecular Beam ◽  
Physiological Activity ◽  
Base Material ◽  
Far Infrared ◽  
Synthetic Compound ◽  
Compound Powder ◽  
Good Biocompatibility ◽  
Degree Of Crystallization ◽  
Chitosan Composite

Chitosan has good biocompatibility and physiological activity, tourmaline possesses characteristics of generation of anion, reduction of water molecular beam and emission of far infrared radiation, so the two composite materials will hopefully possesses the two excellent properties, thus show good application prospect in the biomedical and cosmetic field. Experiment utilized chitosan as wrapped base material, adopt method of suspension solution compound precipitation to manufacture chitosan/tourmaline compound powder, using XRD, SEM, IR and other means to represent powders prepared, and the experimental results show that the synthetic compound powder with irregular granular, chitosan wrapped tourmaline well, the composite of tourmaline and chitosan is physical composite, with the increment of tourmaline , the degree of crystallization of chitosan in compound powder weaken, the composite powder has good absorptive and preservative liquid ability.

Optical Studies of Molecular-Beam Epitaxy-Grown Hg1−xCdxTe with x = 0.7–0.8

2020 ◽  
Vol 49 (8) ◽  
pp. 4642-4646 ◽  
Author(s):  
K. D. Mynbaev ◽  
A. M. Smirnov ◽  
N. L. Bazhenov ◽  
N. N. Mikhailov ◽  
V. G. Remesnik ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Studies

Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR

1998 ◽  
Vol 3 ◽  
Author(s):  
A. M. Witowski ◽  
M. L. Sadowski ◽  
K. Paku ,a ◽  
B. Suchanek ◽  
R. Stepniewski ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Effective Mass ◽  
Ionization Energy ◽  
Far Infrared ◽  
Optical Studies ◽  
Conduction Electrons ◽  
Shallow Donors ◽  
State Splitting ◽  
Si Doped

Far infrared magnetooptical investigations of shallow donors in epitaxial MOCVD GaN layers show two types of shallow donors. In relaxed layers, a donor with an ionization energy of 35 meV was found. In strained, undoped and Si doped samples, a donor with ionization energy 32.5 meV was observed. From the p state splitting in magnetic field, the cyclotron effective mass for conduction electrons was found to be m*=0.222 m0.

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