Low‐temperature diamond growth in a pulsed microwave plasma

1995 ◽  
Vol 13 (3) ◽  
pp. 1617-1618 ◽  
Author(s):  
Zoltan Ring ◽  
Thomas D. Mantei ◽  
Spirit Tlali ◽  
Howard E. Jackson
Fuel ◽  
2021 ◽  
Vol 305 ◽  
pp. 121524
Author(s):  
Wijittra Wongjaikham ◽  
Grittima Kongprawes ◽  
Doonyapong Wongsawaeng ◽  
Kanokwan Ngaosuwan ◽  
Worapon Kiatkittipong ◽  
...  

1989 ◽  
Vol 162 ◽  
Author(s):  
Y. Liou ◽  
A. Inspektor ◽  
R. Weimer ◽  
D. Knight ◽  
R. Messier

ABSTRACTDiamond thin films were deposited on different substrates at low temperatures (lowest temperature∼ 300°C, estimated) in a microwave plasma enhanced chemical vapor deposition (MPCVD) system. The deposited films were amorphous carbon or diamond films depending on the different gas mixtures used. The growth rate of diamond thin films was decreased by adding oxygen to the gas mixture. The addition of oxygen to the gas mixtures was found to be important for diamond growth at low temperatures. Different concentrations of oxygen have been added into the gas mixture. Without oxygen, the deposited films were white soots and easily scratched off. Increasing the oxygen input improved the quality of the Raman peaks and increased the film transpancy. The diamond films were also characterized by scanning electron microscopy (SEM).


CrystEngComm ◽  
2020 ◽  
Vol 22 (12) ◽  
pp. 2138-2146 ◽  
Author(s):  
G. Shu ◽  
V. G. Ralchenko ◽  
A. P. Bolshakov ◽  
E. V. Zavedeev ◽  
A. A. Khomich ◽  
...  

Homoepitaxial diamond growth may proceed with stops and resumptions to produce thick crystals. We found the resumption procedure to take place in a complex way, via a disturbance of step growth features, followed by the recovery after a certain time.


2013 ◽  
Vol 46 (6) ◽  
pp. 063001 ◽  
Author(s):  
Takatoshi Yamada ◽  
Jaeho Kim ◽  
Masatou Ishihara ◽  
Masataka Hasegawa

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