Improved accuracy in monitoring Si monolayer incorporation in GaAs during molecular beam epitaxy
1998 ◽
Vol 16
(3)
◽
pp. 1969-1975
◽
Keyword(s):
1982 ◽
Vol 40
◽
pp. 442-445
1985 ◽
Vol 43
◽
pp. 368-369
1989 ◽
Vol 47
◽
pp. 608-609
1998 ◽
Vol 184-185
(1-2)
◽
pp. 1085-1089
Keyword(s):
Keyword(s):