Pressure and irradiation angle dependence of maskless ion beam assisted etching of GaAs and Si

Cu2O conical micron-scale protrusions have been grown on a preoxidized Cu surface by the Ar ion beam irradiation at 9 kV for 5-20 min in the low vacuum. This Ar ion irradiation is based on the ‘Transcription Method’ which has been originated by B.-S. Xu and S.-I. Tanaka in 1996 to form nanoparticles. Ar ion irradiation induced needle-like nanostructures composed of Cu2O and CuO which were randomly nucleated on Cu surface by the oxidation at 623 K for 10 min in the air. The obtained Cu2O conical protrusions have a controllable length of up to 14.6 μm with diameter in the range of 0.8 μm by changing the Ar ion irradiation angle to the surface. The mechanism of the formation of the conical protrusions is proposed that Cu atoms on the Cu surface activated and sputtered by the Ar ion irradiation diffuse on the surface of needle-like oxide as nuclei along the Ar ion track and react with residual oxygen atoms to grow the conical Cu2O protrusions.

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Irradiation angle dependence and polarization dependence in 3D geometry measurement using AMCW LiDAR

Laser 3D Manufacturing VI ◽

10.1117/12.2507728 ◽

2019 ◽

Cited By ~ 2

Author(s):

Chao Zhang ◽

Neisei Hayashi ◽

Sze Yun Set ◽

Shinji Yamashita

Keyword(s):

Polarization Dependence ◽

Angle Dependence ◽

3D Geometry ◽

Irradiation Angle ◽

Geometry Measurement

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Ion Incident Angle Dependence of Ridge Shapes Formed on [111] Oriented Gd3Ga5O12by Ion Beam Etching

Japanese Journal of Applied Physics ◽

10.1143/jjap.31.l591 ◽

1992 ◽

Vol 31 (Part 2, No. 5A) ◽

pp. L591-L593 ◽

Cited By ~ 1

Author(s):

Yujiro Katoh ◽

Naoto Sugimoto ◽

Akiyuki Tate ◽

Atsushi Shibukawa

Keyword(s):

Incident Angle ◽

Ion Beam ◽

Ion Beam Etching ◽

Angle Dependence

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Summary Abstract: Ion beam angle dependence of collisionally excited Auger electron emission from Al and Si surfaces

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.571885 ◽

1983 ◽

Vol 1 (2) ◽

pp. 1159-1160 ◽

Cited By ~ 3

Author(s):

T. D. Andreadis ◽

Joseph Fine ◽

J. A. D. Matthew

Keyword(s):

Electron Emission ◽

Auger Electron ◽

Ion Beam ◽

Beam Angle ◽

Angle Dependence

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Incident angle dependence of metal etching using a gas cluster ion beam in acetic acid atmosphere

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2016.05.070 ◽

2016 ◽

Vol 306 ◽

pp. 187-189

Author(s):

Akihiro Ogawa ◽

Noriaki Toyoda ◽

Isao Yamada

Keyword(s):

Acetic Acid ◽

Incident Angle ◽

Ion Beam ◽

Angle Dependence ◽

Cluster Ion ◽

Gas Cluster Ion Beam ◽

Metal Etching

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Tunneling and anisotropic-tunneling magnetoresistance in iron nanoconstrictions fabricated by focused-ion-beam

MRS Proceedings ◽

10.1557/proc-1181-dd02-03 ◽

2009 ◽

Vol 1181 ◽

Author(s):

Amalio Fernandez-Pacheco ◽

Jose M De Teresa ◽

Rosa Cordoba ◽

Ricardo Ibarra

Keyword(s):

Low Temperatures ◽

Conduction Mechanism ◽

Focused Ion Beam ◽

Ion Beam ◽

High Vacuum ◽

Fabrication Process ◽

Tunneling Magnetoresistance ◽

Metallic Contact ◽

Angle Dependence ◽

Conductance Quantum

AbstractWe report the magnetoresistance (MR) measurements in a nanoconstriction fabricated by focused-ion-beam (FIB) in the tunneling regime of conductance. The resistance of the contact was controlled during the fabrication process, being stable in the metallic regime, near the conductance quantum, and under high vacuum conditions. The metallic contact was deteriorated when exposed to atmosphere, resulting in a conduction mechanism by tunneling. The TMR was found to be of 3% at 24 K. The anisotropic tunneling magnetoresistance (TAMR) was around 2% for low temperatures, with a field angle dependence more abrupt than in bulk Fe. This preliminary result is promising for the application of this technique to fabricate stable ferromagnetic constrictions near the atomic regime of conductance, where high MR values are expected.

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