An MOS field‐effect transistor fabricated on a molecular‐beam epitaxial silicon layer
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1993 ◽
Vol 11
(3)
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pp. 601
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1989 ◽
Vol 7
(4)
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pp. 680
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2013 ◽
Vol 31
(4)
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pp. 041203
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1984 ◽
Vol 5
(7)
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pp. 285-287
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