Optimization of In[sub 0.53]Ga[sub 0.47]As reactive ion etching with CH[sub 4]/H[sub 2] using design of experiment methods

This paper presents the interaction relationships between Tetrafluoromethane (CF4) gas, Oxygen (O2) gas, and RF power in response to the surface roughness of an Aluminium deposited wafer after being etched using Reactive Ion Etching (RIE). The investigation was done using the three factors full factorial design of experiment (DOE). Analysis was done qualitatively by plotting the main interaction plots. The results suggest that strong interactions are present between CF4 and RF power, CF4 and O2, and also O2 and RF power due to the intersection of the graphs. This implies that all three factors have interaction between each other towards the surface roughness on the deposited Aluminium after RIE.

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Metallic Layer Reflectance Analysis Using Design of Experiment

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.893.461 ◽

2014 ◽

Vol 893 ◽

pp. 461-464

Author(s):

Zaliman Sauli ◽

Vithyacharan Retnasamy ◽

Ong Tee Say ◽

Kok Soo Yih

Keyword(s):

Grain Size ◽

Design Of Experiment ◽

Test Specimen ◽

Gas Flow ◽

Influence Factor ◽

Reactive Ion Etching ◽

Surface Reflectance ◽

Ion Etching ◽

Aluminium Layer ◽

Reflectance Analysis

In this work, a Full Factorial Experimentation technique, Design of Experiment (DOE) was developed and used to control the parameter of RIE (Reactive Ion Etching) process on a silicon wafer with aluminium layer. The objective of this work is to examine the Reactive Ion Etching (RIE) process on aluminium with different parameter, which are temperature, vacuum, RF (Radio Frequency) power and gas flow. Then, AFM (Atomic Force Microscope) and Lambda 950 spectrometer are used to analyse the grain size and light reflectance on the test specimen after RIE process. From the result, all four parameters of RIE were give an effect on grain size and surface reflectance on the test specimen. The parameter of gas flow is the most influence factor for grain size and surface reflectance in RIE process for aluminium layer compared to other parameters in this work.

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Design of experiment for the optimisation of deep reactive ion etching of silicon inserts for microfabrication

10.1117/12.906772 ◽

2012 ◽

Author(s):

K. Wallis ◽

C. P. Shaw ◽

J. R. Alcock

Keyword(s):

Design Of Experiment ◽

Reactive Ion Etching ◽

Ion Etching ◽

Deep Reactive Ion Etching

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Wettability Study Using O2 and Ar RIE Gas Treatment on Aluminium Surface

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.896.233 ◽

2014 ◽

Vol 896 ◽

pp. 233-236

Author(s):

Vithyacharan Retnasamy ◽

Zaliman Sauli ◽

Moganraj Palianysamy ◽

Steven Taniselass ◽

Phaklen Ehkan ◽

...

Keyword(s):

Surface Roughness ◽

Contact Angle ◽

Surface Morphology ◽

Design Of Experiment ◽

Reactive Ion Etching ◽

Ion Etching ◽

Gas Treatment ◽

Bias Power ◽

Preliminary Study ◽

Effect Of Surface

Wettability is one of the most important aspects in microfluid technology. The effect of surface roughness on the wettability by a liquid has been studied experimentally using Design of Experiment(DOE). Sixteen samples were etched using Reactive Ion Etching (RIE) technique with different combination of parameters. RIE parameters concerned in this experiment are ratio of Oxygen, Argon, ICP power and BIAS power. Reactive Ion Etching influences surface morphology which is correlated with the contact angle produced. This preliminary study is to gain information on the how does RIE affects the aluminum bondpad in terms of surface roughness and contact angle.

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Investigation of Surface Roughness on Platinum Deposited Wafer after Reactive Ion Etching Using SF6+Argon Gaseous

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.487.210 ◽

2014 ◽

Vol 487 ◽

pp. 210-213

Author(s):

Zaliman Sauli ◽

Vithyacharan Retnasamy ◽

Aaron Koay Terr Yeow ◽

Goh Siew Chui ◽

K. Anwar ◽

...

Keyword(s):

Surface Roughness ◽

Design Of Experiment ◽

Reactive Ion Etching ◽

Influential Factor ◽

Process Variables ◽

Negative Effects ◽

Working Pressure ◽

Ion Etching ◽

Bias Power ◽

Controllable Process

This paper investigates the factors that affect the surface roughness on a Platinum deposited wafer after reactive ion etching (RIE) using a combination of SF6 and Argon gaseous. A total of three controllable process variables, with 8 sets of experiments were scrutinized using a systematically designed design of experiment (DOE). The three variables in the investigation are ICP power, Bias power, and working pressure. The estimate of the effect calculated for ICP power, Bias power, and working pressure are-4.9288, -6.2383, and-4.7223 respectively. All three factors gave negative effects. This implies that the surface roughness decreases when ICP power, Bias power, and working pressure is high. The Bias Power is the most influential factor followed by ICP Power, and working pressure.

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