Defect reduction of Zn[sub x]Cd[sub y]Mg[sub 1−x−y]Se based structures grown on InP by using Zn irradiation of the III–V surface

Author(s):  
L. Zeng ◽  
S. P. Guo ◽  
Y. Y. Luo ◽  
W. Lin ◽  
M. C. Tamargo ◽  
...  
Keyword(s):  
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.


2015 ◽  
Vol 9 (6) ◽  
pp. 536 ◽  
Author(s):  
P. Kannan ◽  
K. Balasubramanian ◽  
R. Vinayagamoorthy

2020 ◽  
Vol 74 (4) ◽  
pp. 309-315
Author(s):  
Hiroyuki Oishi ◽  
Koichi Tadaki ◽  
Kazutaka Kasuga

Author(s):  
Mike Santana ◽  
Alfredo V. Herrera

Abstract This paper describes a methodology for correlating physical defect inspection/navigation systems with electrical bitmap data through the fabrication of artificial defects via reticle alterations or circuit modifications using an inline FIB. The methodology chosen consisted of altering decommissioned reticles to create defects resulting in both open and shorted circuits within areas of an AMD microprocessor cache. The reticles were subsequently scanned using a KLA SL300HR StarLight inspection system to confirm their location, while wafers processed on these reticles were scanned at several layers using standard inline metrology. Finally, the wafers were electrically tested, bitmapped, and physically deprocessed. All defect data was then analyzed and cross-correlated between each system, uncovering some important system deficiencies and learning opportunities. Data and images are included to support the significance and effectiveness of such a methodology.


Author(s):  
Julie S. Doll

Abstract To enable efficient, accurate debug of Intel architecture components to take place within contract manufacturing sites, and to provide alternatives for the removal of Intel components from, Intel is deploying a diagnostic capability and attendant educational collateral known as to achieve these objectives Intel® Component Diagnostic Technology. This paper will describe details of Intel® Component Diagnostic Technology, including the diagnostic fixture and user interface, diagnostic scripts and analytical coverage, data management and reporting, and on-site and Web-based educational offerings.


2008 ◽  
Author(s):  
Garrett Standley ◽  
John Kasson ◽  
Brian Kidd
Keyword(s):  

Author(s):  
Chuang Li ◽  
Xia Hao ◽  
Jingquan Zhang ◽  
Lili Wu ◽  
Wei Li ◽  
...  
Keyword(s):  

1990 ◽  
Vol 8 (2) ◽  
pp. 1013-1019 ◽  
Author(s):  
K. A. Harris ◽  
T. H. Myers ◽  
R. W. Yanka ◽  
L. M. Mohnkern ◽  
R. W. Green ◽  
...  

2003 ◽  
Vol 798 ◽  
Author(s):  
Angelika Vennemann ◽  
Jens Dennemarck ◽  
Roland Kröger ◽  
Tim Böttcher ◽  
Detlef Hommel ◽  
...  

ABSTRACTGaN samples of this study were chemically wet etched to gain easier access to the dislocation sturcture. The scanning electron microscopy and transmission electron microscopy investigations revealed four different types of etch pits. After brief etching, several dislocations with screw component showed large etch pits, which may be correlated with the core of the screw dislocation. By means of SiNx micromasking the dislocation density could be reduced by more than one order of magnitude. The reduction of threading dislocations in the SiNx region in GaN grown on 〈0001〉 sapphire is due to bending of the threading dislocations into the {0001} plane, such that they form dislocation loops if they meet dislocations with opposite Burgers vectors. Accordingly, the achievable reduction of the dislocation density is limited by the probability that these dislocations interact. Edge dislocations bend more easily on account of their low line tension. This results in a preferential bending and reduction of dislocations with edge character.


2003 ◽  
Vol 42 (Part 1, No. 3) ◽  
pp. 1231-1232
Author(s):  
Young Shin Park ◽  
Kun Ho Kim ◽  
Jeoung Ju Lee ◽  
Hyeon Soo Kim ◽  
Tae Won Kang ◽  
...  

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