Effect of N2/H2 plasma on the growth of InN thin films on sapphire by hollow-cathode plasma-assisted atomic layer deposition

2020 ◽  
Vol 38 (6) ◽  
pp. 062407
Author(s):  
Mustafa Alevli ◽  
Nese Gungor
2015 ◽  
Vol 3 (37) ◽  
pp. 9620-9630 ◽  
Author(s):  
Ali Haider ◽  
Seda Kizir ◽  
Cagla Ozgit-Akgun ◽  
Eda Goldenberg ◽  
Shahid Ali Leghari ◽  
...  

Hollow cathode plasma assisted atomic layer deposited InxGa1−xN alloys show successful tunability of the optical band gap by changing the In concentration in a wide range.


2019 ◽  
Vol 89 (3) ◽  
pp. 63-69 ◽  
Author(s):  
Su Min Hwang ◽  
Aswin L. N. Kondusamy ◽  
Zhiyang Qin ◽  
Harrison Sejoon Kim ◽  
Xin Meng ◽  
...  

2015 ◽  
Vol 12 (4-5) ◽  
pp. 394-398 ◽  
Author(s):  
Cagla Ozgit-Akgun ◽  
Eda Goldenberg ◽  
Sami Bolat ◽  
Burak Tekcan ◽  
Fatma Kayaci ◽  
...  

2014 ◽  
Vol 2 (12) ◽  
pp. 2123-2136 ◽  
Author(s):  
Cagla Ozgit-Akgun ◽  
Eda Goldenberg ◽  
Ali Kemal Okyay ◽  
Necmi Biyikli

The authors report on the use of hollow cathode plasma for low-temperature plasma-assisted atomic layer deposition (PA-ALD) of crystalline AlN, GaN and AlxGa1−xN thin films with low impurity concentrations.


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