Role of nanoscale surface defects on Sn adsorption and diffusion behavior on oxidized Nb(100)

2021 ◽  
Vol 39 (6) ◽  
pp. 063212
Author(s):  
Rachael G. Farber ◽  
Sarah A. Willson ◽  
S. J. Sibener
2020 ◽  
pp. 130-135
Author(s):  
D.N. Korotaev ◽  
K.N. Poleshchenko ◽  
E.N. Eremin ◽  
E.E. Tarasov

The wear resistance and wear characteristics of cluster-gradient architecture (CGA) nanostructured topocomposites are studied. The specifics of tribocontact interaction under microcutting conditions is considered. The reasons for retention of high wear resistance of this class of nanostructured topocomposites are studied. The mechanisms of energy dissipation from the tribocontact zone, due to the nanogeometry and the structural-phase structure of CGA topocomposites are analyzed. The role of triboactivated deformation and diffusion processes in providing increased wear resistance of carbide-based topocomposites is shown. They are tested under the conditions of blade processing of heat-resistant titanium alloy.


2020 ◽  
Vol 69 (12) ◽  
pp. 2286-2293
Author(s):  
A. V. Severin ◽  
A. N. Vasiliev ◽  
A. V. Gopin ◽  
K. I. Enikeev

2000 ◽  
Vol 609 ◽  
Author(s):  
Paul Stradins ◽  
Akihisa Matsuda

ABSTRACTThe drift and diffusion in the presence of charged defects and photocarriers trapped in the tail states is re-examined. In continuity equations, diffusive and drift currents are related to free particles while the Poisson equation includes all charges. In order to make use of ambipolar diffusion approximation, the mobilities and diffusion coefficients should be attributed to the total electron and hole populations making them strongly particle-number dependent. Due to the asymmetry of the conduction and valence band tails, almost all trapped electrons reside in negatively charged defects (D−). A simple model of photocarrier traffic via tail and defect states allows to establish the effective mobility values and coefficients in Einstein relations. In a photocarrier grating experiment, grating of D− is counterbalanced by the grating of trapped holes. Nevertheless, electrons remain majority carriers, allowing the measurement of minority carrier diffusion length, but analysis is needed to relate the latter with μτ product.


1999 ◽  
Vol 568 ◽  
Author(s):  
Lahir Shaik Adam ◽  
Mark E. Law ◽  
Omer Dokumaci ◽  
Yaser Haddara ◽  
Cheruvu Murthy ◽  
...  

ABSTRACTNitrogen implantation can be used to control gate oxide thicknesses [1,2]. This study aims at studying the fundamental behavior of nitrogen diffusion in silicon. Nitrogen at sub-amorphizing doses has been implanted as N2+ at 40 keV and 200 keV into Czochralski silicon wafers. Furnace anneals have been performed at a range of temperatures from 650°C through 1050°C. The resulting annealed profiles show anomalous diffusion behavior. For the 40 keV implants, nitrogen diffuses very rapidly and segregates at the silicon/ silicon-oxide interface. Modeling of this behavior is based on the theory that the diffusion is limited by the time to create a mobile nitrogen interstitial.


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