A comparison of the pattern transfer of line-space patterns from graphoepitaxial and chemoepitaxial block co-polymer directed self-assembly

2014 ◽  
Author(s):  
Dan B. Millward ◽  
Gurpreet S. Lugani ◽  
Ranjan Khurana ◽  
Scott L. Light ◽  
Ardavan Niroomand ◽  
...  
Keyword(s):  
Self Assembly ◽  
Pattern Transfer ◽  
Line Space

28 nm pitch of line/space pattern transfer into silicon substrates with chemo-epitaxy Directed Self-Assembly (DSA) process flow

2014 ◽  
Vol 123 ◽  
pp. 180-186 ◽  
Author(s):  
Boon Teik Chan ◽  
Shigeru Tahara ◽  
Doni Parnell ◽  
Paulina A. Rincon Delgadillo ◽  
Roel Gronheid ◽  
...  
Keyword(s):  
Self Assembly ◽  
Pattern Transfer ◽  
Silicon Substrates ◽  
Process Flow ◽  
Space Pattern ◽  
Line Space ◽  
28 Nm

Pattern transfer of directed self-assembly patterns for CMOS device applications

2013 ◽  
Vol 12 (4) ◽  
pp. 041305 ◽  
Author(s):  
Hsin-Yu Tsai ◽  
Hiroyuki Miyazoe ◽  
Sebastian Engelmann ◽  
Chi-Chun Liu ◽  
Lynne Gignac ◽  
...  
Keyword(s):  
Self Assembly ◽  
Pattern Transfer ◽  
Device Applications

Self-aligned line-space pattern customization with directed self-assembly graphoepitaxy at 24nm pitch

2015 ◽  
Author(s):  
HsinYu Tsai ◽  
Hiroyuki Miyazoe ◽  
Joy Cheng ◽  
Markus Brink ◽  
Simon Dawes ◽  
...  
Keyword(s):  
Self Assembly ◽  
Space Pattern ◽  
Line Space

Study of Line-Space Pitch Multiplication Using Graphoepitaxy Directed Self-Assembly for Semiconductor Applications

2017 ◽  
Vol 46 (7) ◽  
pp. 4405-4413 ◽  
Author(s):  
Shijie Wang ◽  
Wei Deng ◽  
Yong Ann Seow ◽  
Bing Chen ◽  
Qun Ying Lin
Keyword(s):  
Self Assembly ◽  
Line Space

Impact of materials selection on graphoepitaxial directed self-assembly for line-space patterning

2015 ◽  
Author(s):  
Dung Quach ◽  
Valeriy V. Ginzburg ◽  
Mingqi Li ◽  
Janet Wu ◽  
Shih-wei Chang ◽  
...  
Keyword(s):  
Self Assembly ◽  
Materials Selection ◽  
Line Space

scholarly journals Resist-Free Directed Self-Assembly Chemo-Epitaxy Approach for Line/Space Patterning

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2443
Author(s):  
Tommaso Giammaria ◽  
Ahmed Gharbi ◽  
Anne Paquet ◽  
Paul Nealey ◽  
Raluca Tiron
Keyword(s):  
Self Assembly ◽  
Silicon Oxide ◽  
Good Control ◽  
Critical Dimension ◽  
Semiconductor Technology ◽  
Line Edge Roughness ◽  
Neutral Layer ◽  
Edge Roughness ◽  
Chemical Pattern ◽  
Line Space

This work reports a novel, simple, and resist-free chemo-epitaxy process permitting the directed self-assembly (DSA) of lamella polystyrene-block-polymethylmethacrylate (PS-b-PMMA) block copolymers (BCPs) on a 300 mm wafer. 193i lithography is used to manufacture topographical guiding silicon oxide line/space patterns. The critical dimension (CD) of the silicon oxide line obtained can be easily trimmed by means of wet or dry etching: it allows a good control of the CD that permits finely tuning the guideline and the background dimensions. The chemical pattern that permits the DSA of the BCP is formed by a polystyrene (PS) guide and brush layers obtained with the grafting of the neutral layer polystyrene-random-polymethylmethacrylate (PS-r-PMMA). Moreover, data regarding the line edge roughness (LER) and line width roughness (LWR) are discussed with reference to the literature and to the stringent requirements of semiconductor technology.

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