Self-aligned line-space pattern customization with directed self-assembly graphoepitaxy at 24nm pitch

2015 ◽  
Author(s):  
HsinYu Tsai ◽  
Hiroyuki Miyazoe ◽  
Joy Cheng ◽  
Markus Brink ◽  
Simon Dawes ◽  
...  
Keyword(s):  
Self Assembly ◽  
Space Pattern ◽  
Line Space

28 nm pitch of line/space pattern transfer into silicon substrates with chemo-epitaxy Directed Self-Assembly (DSA) process flow

2014 ◽  
Vol 123 ◽  
pp. 180-186 ◽  
Author(s):  
Boon Teik Chan ◽  
Shigeru Tahara ◽  
Doni Parnell ◽  
Paulina A. Rincon Delgadillo ◽  
Roel Gronheid ◽  
...  
Keyword(s):  
Self Assembly ◽  
Pattern Transfer ◽  
Silicon Substrates ◽  
Process Flow ◽  
Space Pattern ◽  
Line Space ◽  
28 Nm

Study of Line-Space Pitch Multiplication Using Graphoepitaxy Directed Self-Assembly for Semiconductor Applications

2017 ◽  
Vol 46 (7) ◽  
pp. 4405-4413 ◽  
Author(s):  
Shijie Wang ◽  
Wei Deng ◽  
Yong Ann Seow ◽  
Bing Chen ◽  
Qun Ying Lin
Keyword(s):  
Self Assembly ◽  
Line Space

Impact of materials selection on graphoepitaxial directed self-assembly for line-space patterning

2015 ◽  
Author(s):  
Dung Quach ◽  
Valeriy V. Ginzburg ◽  
Mingqi Li ◽  
Janet Wu ◽  
Shih-wei Chang ◽  
...  
Keyword(s):  
Self Assembly ◽  
Materials Selection ◽  
Line Space

scholarly journals Resist-Free Directed Self-Assembly Chemo-Epitaxy Approach for Line/Space Patterning

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2443
Author(s):  
Tommaso Giammaria ◽  
Ahmed Gharbi ◽  
Anne Paquet ◽  
Paul Nealey ◽  
Raluca Tiron
Keyword(s):  
Self Assembly ◽  
Silicon Oxide ◽  
Good Control ◽  
Critical Dimension ◽  
Semiconductor Technology ◽  
Line Edge Roughness ◽  
Neutral Layer ◽  
Edge Roughness ◽  
Chemical Pattern ◽  
Line Space

This work reports a novel, simple, and resist-free chemo-epitaxy process permitting the directed self-assembly (DSA) of lamella polystyrene-block-polymethylmethacrylate (PS-b-PMMA) block copolymers (BCPs) on a 300 mm wafer. 193i lithography is used to manufacture topographical guiding silicon oxide line/space patterns. The critical dimension (CD) of the silicon oxide line obtained can be easily trimmed by means of wet or dry etching: it allows a good control of the CD that permits finely tuning the guideline and the background dimensions. The chemical pattern that permits the DSA of the BCP is formed by a polystyrene (PS) guide and brush layers obtained with the grafting of the neutral layer polystyrene-random-polymethylmethacrylate (PS-r-PMMA). Moreover, data regarding the line edge roughness (LER) and line width roughness (LWR) are discussed with reference to the literature and to the stringent requirements of semiconductor technology.

Reactive ion etching challenges for half-pitch sub-10-nm line-and-space pattern fabrication using directed self-assembly lithography

2016 ◽  
Author(s):  
Yusuke Kasahara ◽  
Yuriko Seino ◽  
Hironobu Sato ◽  
Hitoshi Kubota ◽  
Hideki Kanai ◽  
...  
Keyword(s):  
Self Assembly ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Space Pattern

scholarly journals Formation of 7-nm-wide Line&Spaces in Half Pitch by 3 Dimensional Self-assembly of Nano-dots Using Sphere Type PS-PDMS

2021 ◽  
Vol 3 (6) ◽  
pp. 84-90
Author(s):  
Sumio Hosaka ◽  
Hui Zhang ◽  
You Yin ◽  
Hayato Sone
Keyword(s):  
Molecular Weight ◽  
Electron Beam ◽  
Line Width ◽  
Self Assembly ◽  
3 Dimensional ◽  
Dimethyl Siloxane ◽  
Pattern Change ◽  
Space Pattern ◽  
Wide Line ◽  
Guide Lines

We have formed nanometer-wide lines & spaces by graphoepitaxy of sphere type polystyrene-poly dimethyl siloxane (PS-PDMS), with a molecular weight (MW) of 14.6 kg/mol., along electron-beam (EB)-drawn resist guide lines. We have 3-dimensionally ordered the sphere type PS-PDMS by controlling a thickness of the PS-PDMS along improved guide lines to form the line and space pattern. We obtained the thickness dependence on the pattern change such as nano-dot arrays and nano-line & space patterns. When the thickness increased to about +4 nm from the upper thickness for formation of the dot arrays, the line & space patterns have been formed with about 7 nm in line width and 14 nm in pitch.

A comparison of the pattern transfer of line-space patterns from graphoepitaxial and chemoepitaxial block co-polymer directed self-assembly

2014 ◽  
Author(s):  
Dan B. Millward ◽  
Gurpreet S. Lugani ◽  
Ranjan Khurana ◽  
Scott L. Light ◽  
Ardavan Niroomand ◽  
...  
Keyword(s):  
Self Assembly ◽  
Pattern Transfer ◽  
Line Space

scholarly journals Bending Behaviors and Directed Self-assembly of Rod-Coil Block Copolymers

2020 ◽  
Author(s):  
lingying shi ◽  
Sangho Lee ◽  
Qingyang Du ◽  
rong ran ◽  
Runze Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Block Copolymers ◽  
Self Assembly ◽  
Diblock Copolymers ◽  
Pattern Generation ◽  
Solvent Annealing ◽  
Line Segments ◽  
Chemical Functionalization ◽  
Triblock Terpolymers ◽  
Line Space

Abstract The formation of zig-zags, chevrons, Y-junctions and line segments is demonstrated in thin films formed from cylindrical morphology Si-containing rod-coil diblock copolymers and triblock terpolymers under solvent annealing. Directed self-assembly of the block copolymers within trenches yields well-ordered cylindrical microdomains oriented either parallel or transverse to the sidewalls depending on the chemical functionalization of the sidewalls, and the location and structure of concentric bends in the cylinders is determined by the shape of the trenches. The innate etching contrast, the spontaneous sharp bends and junctions, and the range of demonstrated periodicity and line/space ratios make these conformationally asymmetric rod-coil polymers attractive for nanoscale pattern generation.

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