Exposure and characterization of superstructure gratings for DBR lasers generated by direct write electron-beam lithography

1995 ◽  
Author(s):  
Ralf Steingrueber ◽  
Herbert Engel ◽  
R. Loeffler ◽  
C. Sakkas
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Direct Write ◽  
Dbr Lasers

Submicron Ferroelectric Elements Fabricated by Direct Electron Beam Lithography

2002 ◽  
Vol 748 ◽  
Author(s):  
Dong-Joo Kim ◽  
Jin Seo Im ◽  
Carol Thompson ◽  
S. K. Streiffer ◽  
G. Wiederrecht ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Scanning Probe ◽  
Mode Switching ◽  
Direct Write ◽  
Ferroelectric Films ◽  
Contact Mode ◽  
Probe Microscope ◽  
Ferroelectric Memory

ABSTRACTTo realize Gigabit density ferroelectric memory devices, downscaling issues involving processing, materials, and fundamental ferroelectric behavior must be resolved. To address patterning and characterizing ferroelectric films at the nanoscale, we have prepared different lateral sizes of ferroelectric PZT capacitors down to 120 nm, using direct-write electron beam lithography. Characterization of the piezoelectric activity of the patterned elements was performed by means of piezoelectric-sensitive scanning probe microscope in the contact mode. Switching of single 120 nm cells was achieved.

Fabrication of submicron microwave bipolar transistors by direct write electron beam lithography

1992 ◽  
Vol 19 (1-4) ◽  
pp. 737-740
Author(s):  
M.N. Webster ◽  
A.H. Verbruggen ◽  
J. Romijn ◽  
H.F.F. Jos ◽  
P.M.A. Moors ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Bipolar Transistors ◽  
Direct Write

scholarly journals Resist Design Considerations for Direct Write and Projection Electron-Beam Lithography Technologies.

1996 ◽  
Vol 9 (4) ◽  
pp. 663-675 ◽  
Author(s):  
Anthony E. Novembre ◽  
Regine G. Tarascon ◽  
Steven D. Berger ◽  
Chris J. Biddick ◽  
Myrtle I. Blakey ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Direct Write ◽  
Design Considerations

Application of direct-write electron-beam lithography for deep-submicron fabrication

1996 ◽  
Author(s):  
Shyi-Long Shy ◽  
Jen Y. Yew ◽  
Kazumitsu Nakamura ◽  
Chun-Yen Chang
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Deep Submicron ◽  
Direct Write

A Large Range Compliant Nano-Manipulator Supporting Electron Beam Lithography

2022 ◽  
pp. 1-48
Author(s):  
Yijie Liu ◽  
Zhen Zhang
Keyword(s):  
Electron Beam ◽  
Natural Frequency ◽  
High Precision ◽  
Electron Beam Lithography ◽  
Optimization Design ◽  
Large Range ◽  
Direct Write ◽  
Motion Stage ◽  
Cross Axis ◽  
Precision Motion

Abstract Electron beam lithography (EBL) is an important lithographic process of scanning a focused electron beam (e-beam) to direct write a custom pattern with nanometric accuracy. Due to the very limited field of the focused election beam, a motion stage is needed to move the sample to the e-beam field for processing large patterns. In order to eliminate the stitching error induced by the existing “step and scan” process, we in this paper propose a large range compliant nano-manipulator so that the manipulator and the election beam can be moved in a simultaneous manner. We also present an optimization design for the geometric parameters of the compliant manipulator under the vacuum environment. Experimental results demonstrate 1 mm × 1 mm travel range with high linearity, ~ 0.5% cross-axis error and 5 nm resolution. Moreover, the high natural frequency (~ 56 Hz) of the manipulator facilitates it to achieve high-precision motion of EBL.

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