Characterization of field stitching in electron-beam lithography using moiré metrology

Author(s):  
T. E. Murphy ◽  
Mark K. Mondol ◽  
Henry I. Smith
2000 ◽  
Vol 6 (2) ◽  
pp. 129-136 ◽  
Author(s):  
B. A. Sexton ◽  
R. J. Marnock

Technologies such as compact disc (CD) manufacturing, hologram embossing, and security printing rely on the reproduction of micro-patterns generated on surfaces by optical or electron-beam lithographic writing onto electron-beam or photoresists. The periodicity of such patterns varies from sub-micron to several microns, with depths up to 0.5 μm. The scanning probe microscope (SPM) is becoming a routine tool for analysis of these micro-patterns, to check on depths and lateral dimensions of features. Direct scanning of resist-covered plates is now possible, without damage, using resonant low-contact force SPM with etched silicon cantilevers. Metal shims produced from the master resist plates can also be scanned and checked for defects prior to production of embossed foils. The present article discusses examples of the use of a Digital Instruments 3100 microscope in analysis of production electron-beam lithography plates with a 0.5 μm resist thickness. We also examine features of nickel replicas (father and mother shims) produced by electroforming from the original plate. With SPM measurements of the development profile of a particular plate, corrections can be made to exposures and development times during production to correct errors. An example is given of such a feedback process.


2002 ◽  
Vol 748 ◽  
Author(s):  
Dong-Joo Kim ◽  
Jin Seo Im ◽  
Carol Thompson ◽  
S. K. Streiffer ◽  
G. Wiederrecht ◽  
...  

ABSTRACTTo realize Gigabit density ferroelectric memory devices, downscaling issues involving processing, materials, and fundamental ferroelectric behavior must be resolved. To address patterning and characterizing ferroelectric films at the nanoscale, we have prepared different lateral sizes of ferroelectric PZT capacitors down to 120 nm, using direct-write electron beam lithography. Characterization of the piezoelectric activity of the patterned elements was performed by means of piezoelectric-sensitive scanning probe microscope in the contact mode. Switching of single 120 nm cells was achieved.


2010 ◽  
Vol 437 ◽  
pp. 45-50
Author(s):  
Zhuang De Jiang ◽  
Feng Xia Zhao ◽  
Wei Xuan Jing ◽  
Philip D. Prewett ◽  
Kyle Jiang

Motif parameters were introduced to characterize line edge roughness (LER) of a nanoscale grating structure. Firstly with electron beam lithography employed the expected nano-scale grating structure with linewidth of 16 nm was fabricated on positive resist. Then the line edge profiles of the structure were extracted and their LERs were characterized. The results showed that the evaluation method is rather simple, effective and recommendable.


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