Optical fiber tip with point light source of SPPs driven by three-dimensional nanostructured asymmetric metal-insulator-metal layer cap

In confocal microscopy, the object is scanned by the coinciding focal points (confocal) of a point light source and a point detector both focused on a certain plane in the object. Only light coming from the focal point is detected and, even more important, out-of-focus light is rejected.This makes it possible to slice up optically the ‘volume of interest’ in the object by moving it axially while scanning the focused point light source (X-Y) laterally. The successive confocal sections can be stored in a computer and used to reconstruct the object in a 3D image display.The instrument described is able to scan the object laterally with an Ar ion laser (488 nm) at video rates. The image of one confocal section of an object can be displayed within 40 milliseconds (1000 х 1000 pixels). The time to record the total information within the ‘volume of interest’ normally depends on the number of slices needed to cover it, but rarely exceeds a few seconds.

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Structural Integrity of Three-dimensional Metal-insulator-metal (3-D MIM) Capacitor Embedded in Fully-filled Cu Through-silicon Via (TSV)

IEEE Transactions on Components Packaging and Manufacturing Technology ◽

10.1109/tcpmt.2021.3067322 ◽

2021 ◽

pp. 1-1

Author(s):

Ye Lin ◽

Hong Yu Li ◽

Chuan Seng Tan

Keyword(s):

Structural Integrity ◽

Three Dimensional ◽

Metal Insulator ◽

Through Silicon Via ◽

Metal Insulator Metal

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Shape Reconstruction from an Endoscope Image by Shape from Shading Technique for a Point Light Source at the Projection Center

Computer Vision and Image Understanding ◽

10.1006/cviu.1997.0613 ◽

1997 ◽

Vol 66 (2) ◽

pp. 119-131 ◽

Cited By ~ 105

Author(s):

Takayuki Okatani ◽

Koichiro Deguchi

Keyword(s):

Light Source ◽

Shape From Shading ◽

Shape Reconstruction ◽

Point Light Source ◽

Projection Center ◽

Point Light

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Development of Backside Buried Metal Layer Technology for 3D-ICs

International Symposium on Microelectronics ◽

10.4071/2380-4505-2019.1.000268 ◽

2019 ◽

Vol 2019 (1) ◽

pp. 000268-000273

Author(s):

Naoya Watanabe ◽

Yuuki Araga ◽

Haruo Shimamoto ◽

Katsuya Kikuchi ◽

Makoto Nagata

Keyword(s):

Integrated Circuits ◽

Metal Layer ◽

Three Dimensional ◽

Chip Thickness ◽

Power Delivery ◽

Silicon Structure ◽

Metal Insulator ◽

3D Ics ◽

Power Delivery Network ◽

Global Power

Abstract In this study, we developed backside buried metal (BBM) layer technology for three-dimensional integrated circuits (3D-ICs). In this technology, a BBM layer for global power routing is introduced in the large vacant area on the backside of each chip and is parallelly connected with the frontside routing of the chip. The resistances of the power supply (VDD) and ground (VSS) lines consequently decrease. In addition, the BBM structure acts as a decoupling capacitor because it is buried in the Si substrate and has metal–insulator–silicon structure. Therefore, the impedance of power delivery network can be reduced by introducing the BBM layer. The fabrication process of the BBM layer for 3D-ICs was simple and compatible with the via-last through-silicon via (TSV) process. With this process, it was possible to fabricate the BBM layer consisting of electroplated Cu (thickness: approximately 10 μm) buried in the backside of the CMOS chip (thickness: 43 μm), which was connected with the frontside routing of the chip using 9 μm-diameter TSVs.

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