High-hole-mobility organic-inorganic perovskite field-effect transistors (Conference Presentation)

2016 ◽  
Author(s):  
Toshinori Matsushima ◽  
Sun Bin Hwang ◽  
Atula D. Sandanayaka ◽  
Chuanjiang Qin ◽  
Takashi Fujihara ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Inorganic Perovskite

High Hole Mobility and Thickness-Dependent Crystal Structure in α,ω-Dihexylsexithiophene Single-Monolayer Field-Effect Transistors

2012 ◽  
Vol 23 (5) ◽  
pp. 554-564 ◽  
Author(s):  
Ehren M. Mannebach ◽  
Josef W. Spalenka ◽  
Phillip S. Johnson ◽  
Zhonghou Cai ◽  
F. J. Himpsel ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hole Mobility

Direct C–H arylation for various Ar-cored diketopyrrolopyrrole containing small molecules in solution-processed field-effect transistors

RSC Advances ◽  
2016 ◽  
Vol 6 (62) ◽  
pp. 57163-57173 ◽  
Author(s):  
Shifan Wang ◽  
Jie Yang ◽  
Katharina Broch ◽  
Jiri Novák ◽  
Xudong Cao ◽  
...  
Keyword(s):  
Small Molecules ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Solution Processed

D–A–π–A–D small molecules Ar(DPPT2)2 are designed and synthesized by direct (hetero) C–H arylation, with hole mobility as high as 0.12 cm2 V−1 s−1.

N-Fused BDOPV: a tetralactam derivative as a building block for polymer field-effect transistors

2015 ◽  
Vol 51 (52) ◽  
pp. 10514-10516 ◽  
Author(s):  
Yue Cao ◽  
Jing-Song Yuan ◽  
Xu Zhou ◽  
Xiao-Ye Wang ◽  
Fang-Dong Zhuang ◽  
...  
Keyword(s):  
Building Block ◽  
Conjugated Polymer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hole Mobility

Based on a π-extended isoindigo derivative NBDOPV, the conjugated polymer PITET shows a hole mobility of 1.92 cm2 V−1 s−1.

scholarly journals Diamond Based Field-Effect Transistors of Zr Gate withSiNxDielectric Layers

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
W. Wang ◽  
C. Hu ◽  
S. Y. Li ◽  
F. N. Li ◽  
Z. C. Liu ◽  
...  
Keyword(s):  
Carrier Density ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Conduction Channel ◽  
Effect Transistor ◽  
P Type ◽  
Interface Bond ◽  
Transfer Properties

Investigation of Zr-gate diamond field-effect transistor withSiNxdielectric layers (SD-FET) has been carried out. SD-FET works in normally on depletion mode with p-type channel, whose sheet carrier density and hole mobility are evaluated to be 2.17 × 1013 cm−2and 24.4 cm2·V−1·s−1, respectively. The output and transfer properties indicate the preservation of conduction channel because of theSiNxdielectric layer, which may be explained by the interface bond of C-N. High voltage up to −200 V is applied to the device, and no breakdown is observed. For comparison, another traditional surface channel FET (SC-FET) is also fabricated.

Methoxylation of quinoidal bithiophene as a single regioisomer building block for narrow-bandgap conjugated polymers and high-performance organic field-effect transistors

2020 ◽  
Vol 8 (43) ◽  
pp. 15168-15174 ◽  
Author(s):  
Yunlong Sun ◽  
Yunpeng Zhang ◽  
Yang Ran ◽  
Longxian Shi ◽  
Qingsong Zhang ◽  
...  
Keyword(s):  
Conjugated Polymers ◽  
Building Block ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Methoxyl Group ◽  
Organic Field Effect Transistors ◽  
Narrow Bandgap

Methoxyl group was introduced to obtain isomer-free methoxylation quinoidal bithiophene building block. Four polymers displayed narrow bandgap (<1.20 eV) and hole mobility of up to 2.70 cm2 V−1 s−1.

High Hole Mobility in 65 nm Strained Ge p-Channel Field Effect Transistors with HfO2Gate Dielectric

2011 ◽  
Vol 50 (4) ◽  
pp. 04DC17 ◽  
Author(s):  
Jerome Mitard ◽  
Brice De Jaeger ◽  
Geert Eneman ◽  
Andrew Dobbie ◽  
Maksym Myronov ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Hole Mobility

scholarly journals Toward Unusual‐High Hole Mobility of p‐Channel Field‐Effect‐Transistors (Small 37/2021)

Small ◽  
2021 ◽  
Vol 17 (37) ◽  
pp. 2170190
Author(s):  
Jiamin Sun ◽  
Xinming Zhuang ◽  
Yibo Fan ◽  
Shuai Guo ◽  
Zichao Cheng ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Hole Mobility
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