High Hole Mobility in 65 nm Strained Ge p-Channel Field Effect Transistors with HfO2Gate Dielectric
2011 ◽
Vol 50
(4)
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pp. 04DC17
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2012 ◽
Vol 23
(5)
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pp. 554-564
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Keyword(s):
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2020 ◽
Vol 8
(43)
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pp. 15168-15174
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