scholarly journals Diamond Based Field-Effect Transistors of Zr Gate withSiNxDielectric Layers

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
W. Wang ◽  
C. Hu ◽  
S. Y. Li ◽  
F. N. Li ◽  
Z. C. Liu ◽  
...  
Keyword(s):  
Carrier Density ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Conduction Channel ◽  
Effect Transistor ◽  
P Type ◽  
Interface Bond ◽  
Transfer Properties

Investigation of Zr-gate diamond field-effect transistor withSiNxdielectric layers (SD-FET) has been carried out. SD-FET works in normally on depletion mode with p-type channel, whose sheet carrier density and hole mobility are evaluated to be 2.17 × 1013 cm−2and 24.4 cm2·V−1·s−1, respectively. The output and transfer properties indicate the preservation of conduction channel because of theSiNxdielectric layer, which may be explained by the interface bond of C-N. High voltage up to −200 V is applied to the device, and no breakdown is observed. For comparison, another traditional surface channel FET (SC-FET) is also fabricated.

scholarly journals 2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Effect Transistor ◽  
Solution Processable ◽  
P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

Mixed-Dimensional WS2/GaSb Heterojunction for High-performance p-n Diode and Junction Field-Effect Transistor

2022 ◽  
Author(s):  
Zichao Cheng ◽  
Xiufeng Song ◽  
Lianfu Jiang ◽  
Lude Wang ◽  
Jiamin Sun ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Effect Transistor ◽  
P Type ◽  
Silicon Based

GaSb nanowires integrated on a silicon-based substrate are of great significance for p-type field-effect transistors. In particular, due to the continued miniaturization of circuits, such as avoiding complex dielectric engineering,...

Fabrication of high-performance photodetector based on AlGaN/GaN hetero-field-effect transistors with p-GaN gate

2006 ◽  
Vol 955 ◽  
Author(s):  
Shuichi Miura ◽  
Takahiro Fujii ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
Hiroshi Amano ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Uv Light ◽  
Signal To Noise Ratio ◽  
High Signal ◽  
Dark Current Density ◽  
Effect Transistor ◽  
P Type

ABSTRACTAn AlGaN/GaN photo-hetero-field-effect transistor (photo-HFET) with a p-type GaN gate was fabricated and its properties were compared with those of a HFET without a p-type GaN layer. The photo-HFET with a p-GaN gate exhibited a high signal-to-noise ratio of five orders of magnitude and a dark current density of 10 nA/mm at a drain-source bias of 5 V. In contrast, when the photo-HFET was irradiated with 365 nm (490 μW/cm2) UV light, a photocurrent of over 1 mA/mm was achieved. The responsivity of the device was over 1 × 105 A/W.

2-Positional pyrene end-capped oligothiophenes for high performance organic field effect transistors

2016 ◽  
Vol 52 (26) ◽  
pp. 4800-4803 ◽  
Author(s):  
Kazuaki Oniwa ◽  
Hiromasa Kikuchi ◽  
Hidekazu Shimotani ◽  
Susumu Ikeda ◽  
Naoki Asao ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Central Unit ◽  
Organic Field Effect Transistors ◽  
Crystal Field Effect ◽  
Effect Transistor

A new co-oligomer BPy2T with two 2-positional pyrenes as terminal groups and bithiophene as a central unit showed a high hole mobility of 3.3 cm2 V−1 s−1 in a single crystal field effect transistor.

Scalable fabrication of a complementary logic inverter based on MoS2 fin-shaped field effect transistors

2019 ◽  
Vol 4 (3) ◽  
pp. 683-688 ◽  
Author(s):  
Yann-Wen Lan ◽  
Po-Chun Chen ◽  
Yun-Yan Lin ◽  
Ming-Yang Li ◽  
Lain-Jong Li ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Implantation Technique ◽  
Voltage Gain ◽  
Dc Voltage ◽  
Effect Transistor ◽  
P Type

Integration of both n-type and p-type MoS2 fin-shaped field effect transistors by using a traditional implantation technique for complementary field effect transistor is demonstrated. The complementary MoS2 inverter with high DC voltage gain of more than 20 is acquired.

scholarly journals Gate-bias instability of few-layer WSe2 field effect transistors

RSC Advances ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 6818-6824
Author(s):  
Shaofeng Wen ◽  
Changyong Lan ◽  
Chun Li ◽  
Sihan Zhou ◽  
Tianying He ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Gate Bias ◽  
Bias Stress ◽  
Effect Transistor ◽  
P Type ◽  
Bias Instability ◽  
Gate Bias Stress

The performance of the few-layer p-type WSe2-based field effect transistor is sensitive to the environment and gate bias stress.

High-transconductance p-type SiGe modulation-doped field-effect transistor

1995 ◽  
Vol 31 (8) ◽  
pp. 680 ◽  
Author(s):  
M. Arafa ◽  
K. Ismail ◽  
P. Fay ◽  
J.O. Chu ◽  
B.S. Meyerson ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
High Transconductance ◽  
P Type

On Razors Edge: Influence of the Source Insulator Edge on the Charge Transport of Vertical Organic Field Effect Transistors

MRS Advances ◽  
2017 ◽  
Vol 2 (23) ◽  
pp. 1249-1257 ◽  
Author(s):  
F. Michael Sawatzki ◽  
Alrun A. Hauke ◽  
Duy Hai Doan ◽  
Peter Formanek ◽  
Daniel Kasemann ◽  
...  
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors ◽  
Organic Solar Cells ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Electrical Power ◽  
Strong Impact ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

ABSTRACTTo benefit from the many advantages of organic semiconductors like flexibility, transparency, and small thickness, electronic devices should be entirely made from organic materials. This means, additionally to organic LEDs, organic solar cells, and organic sensors, we need organic transistors to amplify, process, and control signals and electrical power. The standard lateral organic field effect transistor (OFET) does not offer the necessary performance for many of these applications. One promising candidate for solving this problem is the vertical organic field effect transistor (VOFET). In addition to the altered structure of the electrodes, the VOFET has one additional part compared to the OFET – the source-insulator. However, the influence of the used material, the size, and geometry of this insulator on the behavior of the transistor has not yet been examined. We investigate key-parameters of the VOFET with different source insulator materials and geometries. We also present transmission electron microscopy (TEM) images of the edge area. Additionally, we investigate the charge transport in such devices using drift-diffusion simulations and the concept of a vertical organic light emitting transistor (VOLET). The VOLET is a VOFET with an embedded OLED. It allows the tracking of the local current density by measuring the light intensity distribution.We show that the insulator material and thickness only have a small influence on the performance, while there is a strong impact by the insulator geometry – mainly the overlap of the insulator into the channel. By tuning this overlap, on/off-ratios of 9x105 without contact doping are possible.

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