Low-threshold room temperature continuous-wave operation of a GaAs single-quantum-well mushroom structure surface-emitting laser

1991 ◽  
Author(s):  
Y. J. Yang ◽  
Thaddeus G. Dziura ◽  
S. C. Wang ◽  
Mr. R. Fernandez ◽  
G. Du ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Continuous Wave ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Continuous Wave Operation ◽  
Structure Surface ◽  
Surface Emitting Laser ◽  
Low Threshold

Low‐threshold operation of a GaAs single quantum well mushroom structure surface‐emitting laser

1991 ◽  
Vol 58 (16) ◽  
pp. 1780-1782 ◽  
Author(s):  
Y. J. Yang ◽  
T. G. Dziura ◽  
R. Fernandez ◽  
S. C. Wang ◽  
G. Du ◽  
...  
Keyword(s):  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Structure Surface ◽  
Surface Emitting Laser ◽  
Low Threshold

Low-threshold room-temperature AlGaAs/GaAs nanowire/single-quantum-well heterostructure laser

2017 ◽  
Vol 110 (6) ◽  
pp. 061104 ◽  
Author(s):  
Xin Yan ◽  
Wei Wei ◽  
Fengling Tang ◽  
Xi Wang ◽  
Luying Li ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Heterostructure Laser ◽  
Gaas Nanowire ◽  
Low Threshold

High-Power Continuous-Wave Operation of BeZnCdSe Single-Quantum-Well Green Laser Diodes

2012 ◽  
Vol 5 (6) ◽  
pp. 062101 ◽  
Author(s):  
Sumiko Fujisaki ◽  
Jun-ichi Kasai ◽  
Ryouichi Akimoto ◽  
Shigehisa Tanaka ◽  
Shinji Tsuji ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Green Laser ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Continuous Wave Operation

scholarly journals Room-temperature continuous-wave vertical-cavity single-quantum-well microlaser diodes

1989 ◽  
Vol 25 (20) ◽  
pp. 1377 ◽  
Author(s):  
Y.H. Lee ◽  
J.L. Jewell ◽  
A. Scherer ◽  
S.L. McCall† ◽  
J.P. Harbison ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Continuous Wave ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Vertical Cavity

Improved Characteristic Temperature (TO) of a 1.3-μm GaInNAs/GaAs Single-Quantum-Well Laser Diode Through Thermal Annealing

1999 ◽  
Vol 597 ◽  
Author(s):  
T. Kitatani ◽  
M. Kondow ◽  
K. Nakahara ◽  
K. Uomi ◽  
T. Tanaka
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Laser Diode ◽  
Continuous Wave ◽  
Characteristic Temperature ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Lasing Wavelength ◽  
Quantum Well Laser ◽  
Continuous Wave Operation

AbstractThrough optimal thermal annealing of the active region of a 1.3 μm GaInNAs/GaAs single-quantum-well laser diode, we obtained a characteristic temperature (T0) of 215 K under pulsed operation from 20°C to 80°C. This is the highest yet reported value for a 1.3-μm semiconductor laser. Even under continuous-wave operation, the T0 was as high as 147 K. The lasing-wavelength change with temperature was as small as 0.39 nm/°C, indicating the excellent stability for a GalnNAs laser diode with T0 of over 200 K. These results demonstrate that GaInNAs is a promising material for fabricating long-wavelength laser diodes used for opticalfiber communications.

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