scholarly journals Tuning of internal gain, dark current and cutoff wavelength of UV photodetectors using quasi-alloy of BGaN-GaN and BGaN-AlN superlattices

2012 ◽  
Author(s):  
J. P. Salvestrini ◽  
A. Ahaitouf ◽  
H. Srour ◽  
S. Gautier ◽  
T. Moudakir ◽  
...  
Keyword(s):  
Dark Current ◽  
Cutoff Wavelength ◽  
Uv Photodetectors ◽  
Internal Gain

Homoepitaxial Growth of 4H-SiC Multi-Epilayers and its Application to UV Detection

2007 ◽  
Vol 556-557 ◽  
pp. 109-112
Author(s):  
Xing Fang Liu ◽  
Guo Sheng Sun ◽  
Yong Mei Zhao ◽  
Jin Ning ◽  
J.Y. Li ◽  
...  
Keyword(s):  
Dark Current ◽  
Boron Concentration ◽  
Uv Detection ◽  
Uv Photodetectors ◽  
Homoepitaxial Growth ◽  
Good Surface ◽  
Surface Morphologies ◽  
Uv Range

Homoepitaxial growth of 4H-SiC p+/π/n- multi-epilayer on n+ substrate and in-situ doping of p+ and π-epilayer have been achieved in the LPCVD system with SiH4+C2H4+H2. The surface morphologies, homogeneities and doping concentrations of the n--single-epilayers and the p+/π/n- multi-epilayers were investigated by Nomarski, AFM, Raman and SIMS, respectively. AFM and Raman investigation showed that both single- and multi-epilayers have good surface morphologies and homogeneities, and the SIMS analyses indicated the boron concentration in p+ layer was at least 100 times higher than that in π layer. The UV photodetectors fabricated on 4H-SiC p+/π/n- multi-epilayers showed low dark current and high detectivity in the UV range.

Influence of Schottky metal-semiconductor contact on the responsivity of UV photodetectors with internal gain

2020 ◽  
Vol 74 (6) ◽  
Author(s):  
Xuan Zhou ◽  
Dayong Jiang ◽  
Man Zhao ◽  
Yuhan Duan ◽  
Nan Wang ◽  
...  
Keyword(s):  
Uv Photodetectors ◽  
Internal Gain ◽  
Semiconductor Contact

Solar-Blind AlGaN-based Schottky Photodiodes With High Detectivity and Low Noise

2002 ◽  
Vol 743 ◽  
Author(s):  
Necmi Biyikli ◽  
Orhan Aytur ◽  
Ibrahim Kimukin ◽  
Turgut Tut ◽  
Ekmel Ozbay
Keyword(s):  
Power Density ◽  
Dark Current ◽  
Reverse Bias ◽  
Low Noise ◽  
Noise Power ◽  
Cutoff Wavelength ◽  
Solar Blind ◽  
Fabrication And Characterization ◽  
Noise Power Density

AbstractWe report on the design, fabrication and characterization of solar-blind Schottky photodiodes with high detectivity and low noise. The devices were fabricated on n-/n+ AlGaN/GaN hetero-structures using a microwave compatible fabrication process. Using Al0.38Ga0.62N absorption layer, true solar-blind operation with a cutoff wavelength of ∼274 nm was achieved. The solar-blind detectors exhibited < 400 fA dark current in the 0–25 V reverse bias regime, and a maximum responsivity of 89 mA/W around 267 nm. The photovoltaic detectivity of the devices were in excess of 2.6×1012 cmHz1/2/W, and the detector noise was 1/f limited with a noise power density less than 3×10−29 A2/Hz at 10 KHz.

Solar-Blind Photodetector with Lower Dark Current and Higher Ilight/Idark Ratio Based on Mg0.38Zn0.62O Film Deposited by Pulsed Laser Deposition Method

2021 ◽  
Vol 21 (3) ◽  
pp. 1703-1710
Author(s):  
Pei-Jiang Cao ◽  
Qing Wang ◽  
Ch. N. Rao ◽  
Shun Han ◽  
Wang-Ying Xu ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Dark Current ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Cubic Phase ◽  
Cutoff Wavelength ◽  
Deposition Method ◽  
Solar Blind ◽  
Key Features ◽  
Quartz Substrates

In this study, pulsed laser deposition method (PLD) was employed to grow MgxZn1-xO films on quartz substrates. The optimal deposition temperature of 300 °C for MgxZn1-xO film was decided and Mg0.38Zn0.62O, Mg0.56Zn0.44O and Mg0.69Zn0.31O films were grown respectively using MgxZn1-xO targets with different Mg contents (x = 0.3, 0.5 and 0.7). As-deposited Mg0.38Zn0.62O film possessed the mixed-phase (hexagonal and cubic phase) structure, appropriate band gap of 4.68 eV and smaller surface roughness of 1.72 nm, and the solar-blind photodetector (PD) based on it was fabricated. The key features of our PD are the cutoff wavelength of 265 nm lying in solar-blind band, lower dark current (Idark) of 88 pA, higher peak responsivity of 0.10 A/W and bigger Ilight/Idark ratio of 1688, which provide the new idea for the application of solar-blind PDs based on MgxZn1-xO films.

unneling effects in InAs/GaInSb superlattice infrared photodiodes

1997 ◽  
Vol 484 ◽  
Author(s):  
U. Weimar ◽  
F. Fuchs ◽  
E. Ahlswede ◽  
J. Schmitz ◽  
W. Pletschen ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Magnetic Fields ◽  
Electric Field ◽  
Dark Current ◽  
Reverse Bias ◽  
Cutoff Wavelength ◽  
Optical And Electrical Properties ◽  
Interband Tunneling ◽  
Infrared Photodiodes ◽  
Device Properties

AbstractThe optical and electrical properties of InAs/GaInSb superlattice mesa photodiodes with a cutoff wavelength around 8 pim are investigated. The influence of the surface potential at the mesa sidewalls on the device properties was studied by fabricating gate-controlled diodes. At least two mechanisms determining the dark current in the reverse bias region can be identified. At high reverse biases bulk bandto- band tunneling dominates while the current at low reverse biases is most likely governed by surface effects. Bulk interband tunneling is further investigated by applying magnetic fields B up to 7 T parallel and perpendicular to the electric field E across the p-n junction.

scholarly journals High-Quality AlxGa1−xN Using Low Temperature-Interlayer and its Application to UV Detector

2000 ◽  
Vol 5 (S1) ◽  
pp. 42-48
Author(s):  
M. Iwaya ◽  
S. Terao ◽  
N. Hayashi ◽  
T. Kashima ◽  
T. Detchprohm ◽  
...  
Keyword(s):  
Low Temperature ◽  
Tensile Stress ◽  
Dark Current ◽  
Uv Detector ◽  
High Quality ◽  
Current Ratio ◽  
Uv Photodetectors

Low-temperature (LT-) AlN interlayer reduces tensile stress during growth of AlxGa1−xN, while simultaneously acts as the dislocation filter, especially for dislocations of which Burger’s vector contains [0001] components. UV photodetectors using thus-grown high quality AlxGa1−xN layers were fabricated. The dark current bellow 50 fA at 10 V bias for 10 μm strip allowing a photocurrent to dark current ratio greater than one even at 40 nW/cm2 have been achieved.

Dark Current Reduction in Near Infrared P-I-N Detector Diodes Fabricated from In.75Ga.25As Grown by Molecular Beam Epitaxy on InP Substrates

1996 ◽  
Vol 450 ◽  
Author(s):  
M. Micovic ◽  
W. Z. Cai ◽  
Y. Ren ◽  
J. Neal ◽  
S. F. Nelson ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Current Density ◽  
Dark Current ◽  
Molecular Beam ◽  
Reverse Bias ◽  
Attractive Alternative ◽  
Cutoff Wavelength ◽  
Dark Current Density ◽  
Inp Substrates ◽  
Reference Samples

ABSTRACTWe have investigated several approaches to improve the material quality of lattice-mismatched In.75Ga.25As grown by Molecular Beam Epitaxy (MBE) on (100) InP substrates. They include linear grading of In composition from lattice matched In.53Ga.47As to In.75Ga.25As in a 1 μm buffer layer grown at reduced substrate temperature, in combination with various in situ annealing and material regrowth steps. The material was used for fabrication of mesa-structure p-i-n photodetectors with 2.2 μm cutoff wavelength. The room temperature dark current density at 1 V reverse bias was approximately 2 mA/cm2 in all structures that were subjected to anneal and regrowth process, a factor of three improvement over reference samples which were not subjected to annealing and regrowth. The dark current density at 15 V reverse bias (10 mA/cm2 for the best devices) was at least two orders of magnitude lower in all annealed samples than in reference samples. These results suggest that the MBE grown material can be an attractive alternative to the vapor phase epitaxy (VPE) grown material which is commonly used for fabrication of these detectors.

Low-Dark-Current $\hbox{TiO}_{2}$ MSM UV Photodetectors With Pt Schottky Contacts

2011 ◽  
Vol 32 (4) ◽  
pp. 530-532 ◽  
Author(s):  
Huolin Huang ◽  
Yannan Xie ◽  
Weifeng Yang ◽  
Feng Zhang ◽  
Jiafa Cai ◽  
...  
Keyword(s):  
Dark Current ◽  
Schottky Contacts ◽  
Uv Photodetectors

InAs-QDIP hybrid broadband infrared photodetector

MRS Advances ◽  
2016 ◽  
Vol 1 (48) ◽  
pp. 3301-3306
Author(s):  
Chee H. Tan ◽  
Ian C. Sandall ◽  
Xinxin Zhou ◽  
Sanjay Krishna
Keyword(s):  
Quantum Dot ◽  
Dark Current ◽  
Spectral Response ◽  
Bonding Process ◽  
Cutoff Wavelength ◽  
Infrared Photodetector ◽  
Infrared Photodiode

ABSTRACTWe demonstrated that an InAs photodiode and a Quantum Dot Infrared Photodiode can be bonded to produce a hybrid broadband infrared photodetector. When cooled to 77 K the InAs photodiode can be used to detect wavelengths from visible to a cutoff wavelength of 3 μm while the Quantum Dot Infrared Photodiode detects wavelengths from 3 to 12 μm. The dark current and spectral response were measured on reference devices and bonded devices. Both sets of devices show similar dark current and spectral response, suggesting that no significant degradation of the devices after the bonding process.

Solar Blind (Al,Ga)N Metal-Semiconductor-Metal Devices for High Performance Flame Detection

2003 ◽  
Vol 764 ◽  
Author(s):  
Mauro Mosca ◽  
Jean-Luc Reverchon ◽  
Nicolas Grandjean ◽  
Franck Omnès ◽  
Jean-Yves Duboz ◽  
...  
Keyword(s):  
Dark Current ◽  
High Performance ◽  
Crack Density ◽  
Chemical Vapor ◽  
Cutoff Wavelength ◽  
Metal Semiconductor Metal ◽  
Solar Blind ◽  
New Process ◽  
Flame Detection ◽  
Level Process

AbstractIn this work we report on solar blind (Al,Ga)N photovoltaic metal-semiconductor-metal (MSM) detectors with a cutoff wavelength as short as ∼270 nm. (Al,Ga)N heterostructures, that allow backside illumination, were grown on sapphire substrates by both metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). We observed that both the interdigitated electrodes and the contact areas contribute to the overall photocurrent. In order to avoid the parasitic current due to the contact pads, we developed a new process where the electrodes are deposited on the (Al,Ga)N surface whereas the contact pads are deposited on an insulator (dielectric) layer besides the electrodes. Some layers develop microcracks related to excess stress. In that case, we showed that both the dark current and the responsivity strongly depend on the crack density. By using our two-level process, we could reduce the parasitic effects of cracks on the dark current. Several dielectrics were tested and our results are reported; values of dark current < 10 fA have been measured at 10 V bias voltage. An extremely high performance can then be reached in these ultraviolet solar blind detectors.

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