Dynamic Range Enhancement Techniques For Solid State Gated Intensified Cameras

1990 ◽  
Author(s):  
Dennis E. Caudle
Keyword(s):  
2011 ◽  
Vol 82 (8) ◽  
pp. 083301 ◽  
Author(s):  
A. B. Zylstra ◽  
H. G. Rinderknecht ◽  
N. Sinenian ◽  
M. J. Rosenberg ◽  
M. Manuel ◽  
...  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Liqun He ◽  
Daniel R. Tessier ◽  
Kyle Briggs ◽  
Matthaios Tsangaris ◽  
Martin Charron ◽  
...  

ABSTRACTSingle-molecule counting is the most accurate and precise method for determining the concentration of a biomarker in solution and is leading to the emergence of digital diagnostic platforms enabling precision medicine. In principle, solid-state nanopores—fully electronic sensors with single-molecule sensitivity—are well suited to the task. Here we present a digital immunoassay scheme capable of reliably quantifying the concentration of a target protein in complex biofluids that overcomes specificity, sensitivity, and consistency challenges associated with the use of solid-state nanopores for protein sensing. This is achieved by employing easily-identifiable DNA nanostructures as proxies for the presence (“1”) or absence (“0”) of the target protein captured via a magnetic bead-based sandwich immunoassay. As a proof-of-concept, we demonstrate quantification of the concentration of thyroid-stimulating hormone from human serum samples down to the high femtomolar range. Further optimization to the method will push sensitivity and dynamic range, allowing for development of precision diagnostic tools compatible with point-of-care format.


Author(s):  
Nobuo Nakamura ◽  
Natsue Sakaguchi ◽  
Yoshitaka Egawa ◽  
Shinji Ohsawa ◽  
Yukio Endo ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 283
Author(s):  
Alessandro Tomasino ◽  
Riccardo Piccoli ◽  
Yoann Jestin ◽  
Boris Le Drogoff ◽  
Mohamed Chaker ◽  
...  

We present an innovative implementation of the solid-state-biased coherent detection (SSBCD) technique, which we have recently introduced for the reconstruction of both amplitude and phase of ultra-broadband terahertz pulses. In our previous works, the SSBCD method has been operated via a heterodyne scheme, which involves demanding square-wave voltage amplifiers, phase-locked to the THz pulse train, as well as an electronic circuit for the demodulation of the readout signal. Here, we demonstrate that the SSBCD technique can be operated via a very simple homodyne scheme, exploiting plain static bias voltages. We show that the homodyne SSBCD signal turns into a bipolar transient when the static field overcomes the THz field strength, without the requirement of an additional demodulating circuit. Moreover, we introduce a differential configuration, which extends the applicability of the homodyne scheme to higher THz field strengths, also leading a two-fold improvement of the dynamic range compared to the heterodyne counterpart. Finally, we demonstrate that, by reversing the sign of the static voltage, it is possible to directly retrieve the absolute THz pulse polarity. The homodyne configuration makes the SSBCD technique of much easier access, leading to a vast range of field-resolved applications.


2020 ◽  
Vol 6 (27) ◽  
pp. eabb2958 ◽  
Author(s):  
A. Melianas ◽  
T. J. Quill ◽  
G. LeCroy ◽  
Y. Tuchman ◽  
H. v. Loo ◽  
...  

Devices with tunable resistance are highly sought after for neuromorphic computing. Conventional resistive memories, however, suffer from nonlinear and asymmetric resistance tuning and excessive write noise, degrading artificial neural network (ANN) accelerator performance. Emerging electrochemical random-access memories (ECRAMs) display write linearity, which enables substantially faster ANN training by array programing in parallel. However, state-of-the-art ECRAMs have not yet demonstrated stable and efficient operation at temperatures required for packaged electronic devices (~90°C). Here, we show that (semi)conducting polymers combined with ion gel electrolyte films enable solid-state ECRAMs with stable and nearly temperature-independent operation up to 90°C. These ECRAMs show linear resistance tuning over a >2× dynamic range, 20-nanosecond switching, submicrosecond write-read cycling, low noise, and low-voltage (±1 volt) and low-energy (~80 femtojoules per write) operation combined with excellent endurance (>109 write-read operations at 90°C). Demonstration of these high-performance ECRAMs is a fundamental step toward their implementation in hardware ANNs.


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