Applications of In Situ Ellipsometry in RTP Temperature Measurement and Process Control

1991 ◽  
Vol 224 ◽  
Author(s):  
Hisham Z. Massoud ◽  
Ronald K. Sampson ◽  
Kevin A. Conrad ◽  
Yao-Zhi Hu ◽  
Eugene A. Irene
Keyword(s):  
Temperature Dependence ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Index Of Refraction ◽  
Strong Temperature Dependence ◽  
Heating And Cooling ◽  
Wafer Processing ◽  
And Control ◽  
Measurement And Control

AbstractThe applications of in situ automated ellipsometry in the measurement and control of temperature in rapid-thermal processing (RTP) equipment are investigated. This technique relies on the accurate measurement of the index of refraction of a wafer using ellipsometry and the strong temperature dependence of the index of refraction to determine the wafer temperature. In principle, this technique is not limited to silicon wafer processing and could be applied to any surface whose index of refraction has a strong and well known temperature dependence. This technique is non-invasive, non-contact, fast, accurate, compatible with ultraclean processing, and lends itself to monitoring the dynamic heating and cooling cycles encountered in rapid-thermal processing.

Rapid Thermal Processing: How Well is it Doing and Where is it Going?

1987 ◽  
Vol 92 ◽  
Author(s):  
T.O. Sedgwick
Keyword(s):  
Thermal Processing ◽  
Film Growth ◽  
Rapid Thermal Processing ◽  
Semiconductor Technology ◽  
Productivity Cost ◽  
Wafer Processing ◽  
And Control ◽  
Measurement And Control ◽  
Reactive Mode ◽  
Made In

ABSTRACTThe use of Rapid Thermal Processing (RTP) as a processing tool in semiconductor technology is still increasing and and becoming more diverse. The use of RTP in a reactive mode for film growth and deposition is an important new direction. The strong interest in III-V compound annealing studies represents one of the most important application areas. Although RTP is predominantly exploratory and developmental in nature it is slowly being introduced into the manufacture of Si devices. The technological necessity for the greater use of RTP in routine production will depend on either demonstrated productivity/cost advantages or on some intrinsic advantage of RTP. The intrinsic advantages of RTP are due to the single wafer processing nature of the operation or due to the possibility of selectively enhancing one desired process over another undesired reaction in a partically fabricated structure. Although significant impovements in commercially available reactors have been made in the last several years, better temperature measurement and control and particularly temperature uniformity of the wafer are still sorely needed.

Modeling, Identification, and Control of Rapid Thermal Processing Systems

1994 ◽  
Vol 141 (11) ◽  
pp. 3200-3209 ◽  
Author(s):  
Charles D. Schaper ◽  
Mehrdad M. Moslehi ◽  
Krishna C. Saraswat ◽  
Thomas Kailath
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
And Control

Rapid Thermal Processing-Based Heteroepitaxy: Material and Device Challenges

1995 ◽  
Vol 387 ◽  
Author(s):  
J. L. Hoyt ◽  
P. Kuo ◽  
K. Rim ◽  
J. J. Welser ◽  
R. M. Emerson ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Atomic Layer ◽  
Layer Growth ◽  
Point Of View ◽  
Atomic Layer Epitaxy ◽  
Future Research ◽  
Layer By Layer ◽  
Limited Growth ◽  
Measurement And Control

AbstractMaterial and device challenges for Rapid Thermal Processing (RTP) of heterostructures are discussed, focusing on RTP-based epitaxy in the Si/Si1−xGex system. While RTP-based heteroepitaxy offers enhanced processing flexibility, it also poses significant challenges for temperature measurement and control. Several examples of Si/Si1−xGex device structures are discussed from the point of view of the sensitivity of device parameters to variations in layer thickness and composition. The measured growth kinetics for Si and Si1−xGex are then used to estimate growth temperature tolerances for these structures. Demanding applications are expected to require temperature control and uniformity to within 0.5°C.Future research challenges include the fabrication of structures with monolayer thickness control using self-limited growth techniques. Atomic layer epitaxy (ALE) is a well-known example of such a growth technique. In ALE, the wafer is cyclically exposed to different reactants, to achieve layer-by-layer growth. An RTP-based atomic layer epitaxy process, and its application to the growth of CdTe films, is briefly discussed. The extension to Column IV alloys follows readily. The RTP-based process enables self-limited growth for precursor combinations for which isothermal ALE is not feasible.

scholarly journals In Situ Measurement and Control of the Fermi Level in Colloidal Nanocrystal Thin Films during Their Fabrication

2018 ◽  
Vol 9 (24) ◽  
pp. 7165-7172 ◽  
Author(s):  
Sebastian Volk ◽  
Nuri Yazdani ◽  
Olesya Yarema ◽  
Maksym Yarema ◽  
Deniz Bozyigit ◽  
...  
Keyword(s):  
Thin Films ◽  
Fermi Level ◽  
In Situ Measurement ◽  
And Control ◽  
Measurement And Control

Evaluation of Applied Materials' Rapid Thermal Processor using Sematech Methodologies for 0.25 m Technology Thermal Applications-Part II

1996 ◽  
Vol 429 ◽  
Author(s):  
Arun K. Nanda ◽  
Terrence J. Riley ◽  
Gary Miner ◽  
Michael F. Pas ◽  
Sylvia Hossain-Pas
Keyword(s):  
Thermal Processing ◽  
Cost Effective ◽  
Development Project ◽  
Control Performance ◽  
Joint Development ◽  
Temperature Offset ◽  
And Control ◽  
High Degree ◽  
Manufacturing Environments ◽  
Measurement And Control

AbstractUnder a joint development contract with Applied Materials (AMAT) and Texas Instruments (TI), SEMATECH undertook a project (Joint Development Project J100) with a goal of delivering a cost effective, technically advanced Rapid Thermal Processor (RTP). The RTP tool was specified to meet the present and future manufacturing needs of SEMATECH's member companies. The J100 results contained here will focus on the temperature and control performance of the AMAT RTP tool. The J100 results on the temperature measurement and control performance of AMAT's RTP tool using bare backside monitor wafers were presented in part I. In actual manufacturing environments the backside conditions of wafers are not consistent which causes temperature variations during rapid thermal processing. In this experiment, boron monitor wafers with varying backside conditions were used to test the uniformity, repeatability, and stability of the tool. The wafer backside films were fabricated using predictions from emissivity models and were subsequently verified by experimental techniques. In addition, perturbation experiments utilizing boron and arsenic implanted wafers demonstrated a high degree of localized temperature control across the wafers. A 3-sigma temperature variation ranging from 3.0 °C (for wafers with similar backside films) to 6.0 °C (for wafers with varying backside films) was found for all wafers processed during this evaluation. The perturbation experiments, which included a forced temperature offset of two degrees at one of the wafer temperature sensors, resulted in a noticeable change in sheet resistance across the wafer.

Temperature dependence of the resistance in the Pt/Ti nonalloyed ohmic contacts top‐InAs induced by rapid thermal processing

1990 ◽  
Vol 68 (8) ◽  
pp. 4141-4150 ◽  
Author(s):  
A. Katz ◽  
S. N. G. Chu ◽  
B. E. Weir ◽  
W. C. Dautremont‐Smith ◽  
R. A. Logan ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Thermal Processing ◽  
Ohmic Contacts ◽  
Rapid Thermal Processing
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