scholarly journals Bication lead iodide 2D perovskite component to stabilize inorganic α-CsPbI 3 perovskite phase for high-efficiency solar cells

2017 ◽  
Vol 3 (9) ◽  
pp. e1700841 ◽  
Author(s):  
Taiyang Zhang ◽  
M. Ibrahim Dar ◽  
Ge Li ◽  
Feng Xu ◽  
Nanjie Guo ◽  
...  
2020 ◽  
Vol 4 (1) ◽  
pp. 324-330 ◽  
Author(s):  
Muhammad Sohail Abbas ◽  
Sabir Hussain ◽  
Jinaqi Zhang ◽  
Boxin Wang ◽  
Chen Yang ◽  
...  

A 2D–3D perovskite, in which 3D perovskite phase is bridged by 2D perovskite having periodically repeated vertical orientation is reported. It's PCE and stability is better than 3D MAPbI3 and it is an excellent structural strategy to improve stability of perovskite solar cells.


2019 ◽  
Author(s):  
Sofia Masi ◽  
Carlos Echeverría-Arrondo ◽  
Salim K.P. Muhammed ◽  
Thi Tuyen Ngo ◽  
Perla F. Méndez ◽  
...  

<b>The extraordinary low non-radiative recombination and band gap versatility of halide perovskites have led to considerable development in optoelectronic devices. However, this versatility is limited by the stability of the perovskite phase, related to the relative size of the different cations and anions. The most emblematic case is that of formamidinium lead iodine (FAPI) black phase, which has the lowest band gap among all 3D lead halide perovskites, but quickly transforms into the non-perovskite yellow phase at room temperature. Efforts to optimize perovskite solar cells have largely focused on the stabilization of FAPI based perovskite structures, often introducing alternative anions and cations. However, these approaches commonly result in a blue-shift of the band gap, which limits the maximum photo-conversion efficiency. Here, we report the use of PbS colloidal quantum dots (QDs) as stabilizing agent for the FAPI perovskite black phase. The surface chemistry of PbS plays a pivotal role, by developing strong bonds with the black phase but weak ones with the yellow phase. As a result, stable FAPI black phase can be formed at temperatures as low as 85°C in just 10 minutes, setting a record of concomitantly fast and low temperature formation for FAPI, with important consequences for industrialization. FAPI thin films obtained through this procedure preserve the original low band gap of 1.5 eV, reach a record open circuit potential (V<sub>oc</sub>) of 1.105 V -91% of the maximum theoretical V<sub>oc</sub>- and preserve high efficiency for more than 700 hours. These findings reveal the potential of strategies exploiting the chemi-structural properties of external additives to relax the tolerance factor and optimize the optoelectronic performance of perovskite materials.</b>


2015 ◽  
Vol 6 (1) ◽  
Author(s):  
Aurelien M. A. Leguy ◽  
Jarvist Moore Frost ◽  
Andrew P. McMahon ◽  
Victoria Garcia Sakai ◽  
W. Kockelmann ◽  
...  

Abstract Methylammonium lead iodide perovskite can make high-efficiency solar cells, which also show an unexplained photocurrent hysteresis dependent on the device-poling history. Here we report quasielastic neutron scattering measurements showing that dipolar CH3NH3 + ions reorientate between the faces, corners or edges of the pseudo-cubic lattice cages in CH3NH3PbI3 crystals with a room temperature residence time of ∼14 ps. Free rotation, π-flips and ionic diffusion are ruled out within a 1–200-ps time window. Monte Carlo simulations of interacting CH3NH3 + dipoles realigning within a 3D lattice suggest that the scattering measurements may be explained by the stabilization of CH3NH3 + in either antiferroelectric or ferroelectric domains. Collective realignment of CH3NH3 + to screen a device’s built-in potential could reduce photovoltaic performance. However, we estimate the timescale for a domain wall to traverse a typical device to be ∼0.1–1 ms, faster than most observed hysteresis.


2019 ◽  
Author(s):  
Sofia Masi ◽  
Carlos Echeverría-Arrondo ◽  
Salim K.P. Muhammed ◽  
Thi Tuyen Ngo ◽  
Perla F. Méndez ◽  
...  

<b>The extraordinary low non-radiative recombination and band gap versatility of halide perovskites have led to considerable development in optoelectronic devices. However, this versatility is limited by the stability of the perovskite phase, related to the relative size of the different cations and anions. The most emblematic case is that of formamidinium lead iodine (FAPI) black phase, which has the lowest band gap among all 3D lead halide perovskites, but quickly transforms into the non-perovskite yellow phase at room temperature. Efforts to optimize perovskite solar cells have largely focused on the stabilization of FAPI based perovskite structures, often introducing alternative anions and cations. However, these approaches commonly result in a blue-shift of the band gap, which limits the maximum photo-conversion efficiency. Here, we report the use of PbS colloidal quantum dots (QDs) as stabilizing agent for the FAPI perovskite black phase. The surface chemistry of PbS plays a pivotal role, by developing strong bonds with the black phase but weak ones with the yellow phase. As a result, stable FAPI black phase can be formed at temperatures as low as 85°C in just 10 minutes, setting a record of concomitantly fast and low temperature formation for FAPI, with important consequences for industrialization. FAPI thin films obtained through this procedure preserve the original low band gap of 1.5 eV, reach a record open circuit potential (V<sub>oc</sub>) of 1.105 V -91% of the maximum theoretical V<sub>oc</sub>- and preserve high efficiency for more than 700 hours. These findings reveal the potential of strategies exploiting the chemi-structural properties of external additives to relax the tolerance factor and optimize the optoelectronic performance of perovskite materials.</b>


2008 ◽  
Author(s):  
Bernd Ahrens ◽  
Bastian Henke ◽  
Paul T. Miclea ◽  
Jacqueline A. Johnson ◽  
Stefan Schweizer

1992 ◽  
Vol 258 ◽  
Author(s):  
Sadaji Tsuge ◽  
Yoshihiro Hishikawa ◽  
Shingo Okamoto ◽  
Manabu Sasaki ◽  
Shinya Tsuda ◽  
...  

ABSTRACTA hydrogen-plasma treatment has been used for the first time to fabricate wide-gap, high-quality a-Si:H films. The hydrogen content (CH) of a-Si:H films substantially increases by the hydrogen-plasma treatment after deposition, without deteriorating the opto-electric properties of the films. The photoconductivity (σph) of ≥ 10-5 ο-1 cm-1, photosensitivity ( σ ph/σ d) of > 106 and SiH2/SiH of <0.2 are achieved for a film with CH of ∼25 atomic >%. The optical gap of the film is > 1.70 eV by the (α h ν )1/3 plot, and is >2 eV by the Tauc's plot. The open circuit voltage of a-Si solar cells exceeds 1 V conserving the fill factor of > 0.7 when the wide-gap a∼Si:H films are used as the i-layer, which proves the wide band gap and low defect density.


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