Electrical Resistivity at Low Temperatures: The pressure dependence of the electrical resistance of metals gives some clues about their Fermi surfaces

Science ◽  
1961 ◽  
Vol 134 (3472) ◽  
pp. 77-86 ◽  
Author(s):  
J. S. Dugdale
Keyword(s):  
Electrical Resistivity ◽  
Pressure Dependence ◽  
Electrical Resistance ◽  
Low Temperatures ◽  
Fermi Surfaces

scholarly journals On the electrical resistivity of electrolytic bismuth at low temperature, and in magnetic fields

1897 ◽  
Vol 60 (359-367) ◽  
pp. 425-432 ◽  
Keyword(s):  
Electrical Resistivity ◽  
Low Temperature ◽  
Magnetic Fields ◽  
Electrical Resistance ◽  
Low Temperatures ◽  
Royal Society ◽  
Pole Piece ◽  
Interpolar Distance ◽  
Pure Bismuth ◽  
Transverse Magnetisation

In a previous communication to the Royal Society we have pointed out the behaviour of electrolytically prepared bismuth when cooled to very low temperatures, and at the same time subjected to transverse magnetisation. During the last summer we have extended these observations, and completed them, as far as possible, by making measurements of the electrical resistance of a wire of pure bismuth, placed transversely to the direction of the field of an electromagnet, and at the same time subjected to the low temperature obtained by the use of liquid air. Sir David Salomons was so kind as to lend us for some time his large electromagnet, which, in addition to giving a powerful field, is provided with the means of easily altering the interpolar distance of the pole pieces, and also for changing from one form of pole piece to another.

The effect of pressure on the electrical resistance of lithium, sodium and potassium at low temperatures

1962 ◽  
Vol 270 (1341) ◽  
pp. 186-211 ◽  
Keyword(s):  
Electrical Resistivity ◽  
High Temperature ◽  
Linear Relation ◽  
Electrical Resistance ◽  
Low Temperatures ◽  
Constant Density ◽  
Theoretical Predictions ◽  
Volume Coefficient ◽  
Sodium And Potassium ◽  
The Ideal

Measurements have been made of the electrical resistivity of lithium, sodium and potassium at temperatures between 2 and 300 °K and at pressures up to 3000 atm . From our results we have calculated the ideal electrical resistivity, ρ i , and its volume derivative as functions of temperature for conditions of constant density. It is shown that, as predicted by simple theory, there is a linear relation between the temperature and volume coefficients of ρ i for each metal. We conclude that the magnitude of the volume coefficient of ρ i does not, at high temperatures at least, agree with present theoretical predictions and that this coefficient is closely connected with the high-temperature value of the thermoelectric power.

Electrical resistivity of binary chromium alloys with vanadium, niobium, and tantalum

1969 ◽  
Vol 47 (9) ◽  
pp. 1005-1010 ◽  
Author(s):  
Sigurds Arajs
Keyword(s):  
Electrical Resistivity ◽  
Low Temperatures ◽  
Solubility Limit ◽  
Solute Concentration ◽  
Residual Resistivity ◽  
Wave Functions ◽  
Vanadium Concentration ◽  
Fermi Surfaces ◽  
Solute Content ◽  
Chromium Alloys

Electrical resistivity of binary chromium alloys containing 1.02, 2.04, and 3.06 at. % vanadium; 0.33, 0.57, and 1.13 at. % niobium; and 0.14, 0.30, and 0.58 at. % tantalum have been measured as a function of temperature between 4 and 325 °K. These studies show that the Néel temperature, TN, decreases with increasing solute concentration in such a manner that ln T plots are linear with respect to the solute content. The curve of TN vs. solute concentration for tantalum, within the solubility limit, overlaps that for vanadium. The corresponding curve for niobium is slightly above the curve associated with vanadium and tantalum. This behavior cannot be explained simply from the viewpoint of the localization of d-wave functions using the model of Fedders and Martin. The increase in the residual electrical resistivity at 4.2 °K due to 1 at. % vanadium, niobium, and tantalum has been found to be 0.45, 2.7, and 3.6 μΩ cm, respectively. The residual resistivity vs. vanadium concentration curve shows an anomaly at about 3 at. % due to the changes in the Fermi surfaces, because of the disappearance of the antiferromagnetic state. None of the binary chromium alloys exhibit the Kim effect at low temperatures found in certain chromium alloys.

scholarly journals Влияние углерода на электрические свойства объемных композитов на основе окиси меди

2018 ◽  
Vol 60 (4) ◽  
pp. 677
Author(s):  
Ю.Е. Калинин ◽  
М.А. Каширин ◽  
В.А. Макагонов ◽  
С.Ю. Панков ◽  
А.В. Ситников
Keyword(s):  
Electrical Resistivity ◽  
Electrical Resistance ◽  
Low Temperatures ◽  
Ceramic Technology ◽  
Localized States ◽  
Filler Concentration ◽  
Schematic Model ◽  
Carbon Filler ◽  
The Matrix ◽  
Temperature Dependences

AbstractThe effect of carbon filler on the electrical resistance and the thermopower of copper oxide-based composites produced by ceramic technology by hot pressing has been studied. It is found that the dependences of the electrical resistivity on the filler concentration are characteristic by S-like curves that are typical of percolation systems; in this case, the resistivity decreases more substantially as the carbon content increases as compared to the decrease in thermopower value, which is accompanied by the existence of the maximum of the factor of thermoelectric power near the percolation threshold. The studies of the temperature dependences of the resistivity and the thermopower at low temperatures show that, in the range 240–300 K, the predominant mechanism of the electrotransfer of all the composites under study is the hopping mechanism. At temperatures lower than 240 K, the composites with a nanocrystalline CuO matrix have a hopping conductivity with a variable hopping distance over localized states of the matrix near the Fermi level, which is related to the conductivity over intergrain CuO boundaries. A schematic model of the band structure of nanocrystalline CuO with carbon filler is proposed on the base of the analysis of the found experimental regularities of the electrotransfer.

TEMPERATURE DEPENDENCE BEHAVIOR OF ELECTRICAL RESISTIVITY IN NOBLE METALS AT LOW TEMPERATURES

2014 ◽  
Vol 5 (3) ◽  
pp. 982-992 ◽  
Author(s):  
M AL-Jalali
Keyword(s):  
Experimental Data ◽  
Electrical Resistivity ◽  
Temperature Dependence ◽  
Concentration Dependence ◽  
Low Temperatures ◽  
Noble Metals ◽  
Phonon Scattering ◽  
Theoretical Models ◽  
Residual Resistivity ◽  
Electron Phonon Scattering

Resistivity temperature – dependence and residual resistivity concentration-dependence in pure noble metals(Cu, Ag, Au) have been studied at low temperatures. Dominations of electron – dislocation and impurity, electron-electron, and electron-phonon scattering were analyzed, contribution of these mechanisms to resistivity were discussed, taking into consideration existing theoretical models and available experimental data, where some new results and ideas were investigated.

Insight into the physics of the 5f -band antiferromagnet U2Ni2Sn from the pressure dependence of crystal structure and electrical resistivity

2021 ◽  
Vol 103 (3) ◽  
Author(s):  
Silvie Maskova-Cerna ◽  
Alexandre Kolomiets ◽  
Jiri Prchal ◽  
Itzhak Halevy ◽  
Volodymyr Buturlim ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Electrical Resistivity ◽  
Pressure Dependence ◽  
Insight Into

Electrical resistivity of intermetallic compound PrInAg2 at ultra low temperatures

2002 ◽  
Vol 239 (1-3) ◽  
pp. 31-32 ◽  
Author(s):  
Hiroyuki Mitamura ◽  
Yoshitomo Karaki ◽  
Ryuichi Masutomi ◽  
Nao Takeshita ◽  
Akira Yamaguchi ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Intermetallic Compound ◽  
Low Temperatures

MAGNETIC BEHAVIOUR OF UPdAl, UCuGa AND UCuSn

1993 ◽  
Vol 07 (01n03) ◽  
pp. 850-854 ◽  
Author(s):  
V.H. TRAN ◽  
R. TROĆ
Keyword(s):  
Electrical Resistivity ◽  
Magnetic Susceptibility ◽  
Low Temperatures ◽  
Magnetic Behaviour ◽  
Type Structure ◽  
Complex Structures ◽  
Temperature Dependent ◽  
Antiferromagnetic Ordering

Magnetic susceptibility and electrical resistivity have been measured on UCuGa, UCu1+xSn1−x, (x=0 and 0.1), and UPdAl. The first two compounds, crystallizing in the hexagonal CaIn2-type structure, show at low temperatures an antiferromagnetic ordering probably with complex structures. UPdAl, which adopts the orthorhombic TiNiSi-type structure, was found to be a weakly temperature-dependent paramagnet down to 4.2 K.

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