Gallium Nitride Thick Layers: Epitaxial Growth and Separation from Substrates

1996 ◽  
Vol 449 ◽  
Author(s):  
V. V. Bel’kov ◽  
V. M. Botnaryuk ◽  
L. M. Fedorov ◽  
I. I. Diakonu ◽  
V. V. Krivolapchyuk ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapour Phase ◽  
Film Deposition ◽  
X Ray Diffraction ◽  
Chloride System ◽  
Vapour Phase Epitaxy ◽  
Layer Deposition ◽  
Visible Wavelength Range ◽  
Nitride Layers

ABSTRACTWe investigated the possibilities of vapour phase epitaxy in an open tube chloride system for thick GaN film deposition on sapphire substrates. The methodes of the buffer layer deposition were proposed and developed. The methods of fast ( up to 100 microns / hour ) was developed. Parameters of good quality gallium nitride epitaxy were obtained.To determine the quality of fast grown epitaxial layers we used X-ray diffraction and photoluminescence measurements. The halfwidth of the rocking curve for the best samples was equal to 4-6 minutes. Luminescense spectrum ( T=77K ) had a maximum near 3.46 eV. A signal in the visible wavelength range was hardly observed. Polished layers were transparent.A special initial treatment of the substrates allowed us to separate thick ( up to 300 micron ) epitaxial gallium nitride layers from sapphire. It was shown that it is possible to use separated films for homoepitaxy of GaN.

HVPE Growth of GaN Layers on Cleaved β-Ga2O3 Substrates

2016 ◽  
Vol 674 ◽  
pp. 302-307 ◽  
Author(s):  
V.I. Nikolaev ◽  
A.I. Pechnikov ◽  
S.I. Stepanov ◽  
V.M. Krymov ◽  
V.N. Maslov ◽  
...  
Keyword(s):  
Deposition Time ◽  
Substrate Surface ◽  
Vapour Phase ◽  
Structural Quality ◽  
X Ray Diffraction ◽  
Nucleation Layer ◽  
Vapour Phase Epitaxy ◽  
X Ray ◽  
Gan Film

GaN epitaxial layers were successfully grown by hydride vapour phase epitaxy (HVPE) on β-Ga2O3 substrates produced by cleaving. The initial stages of GaN epitaxial growth on β-Ga2O3 were studied by scanning electron microscopy (SEM) and x-ray diffraction analysis (XRD). The nucleation and the transition from the nucleation layer to a continuous GaN film were studied. It was found that the growth starts with formation of small crystallites on the substrate surface. As the growth continues, crystallites transform into pyramidal islands which increase in size and merge together. It was found that the structural quality of the GaN layers rapidly improves with increasing thickness. The full width at half maximum of x-ray ω rocking curves for (0002) peak decreased from 1370 to 540 arcsec as the deposition time was increased from 30 to 120 sec. This corresponds to the variation of the nominal layer thickness from 250 nm to 1000 nm.

A Tem study of GaN Grown by ELO on (0001) 6H-SiC

1999 ◽  
Vol 595 ◽  
Author(s):  
P. Ruterana ◽  
B. Beaumont ◽  
P. Gibart ◽  
Y. Melnik
Keyword(s):  
Basal Plane ◽  
Lattice Mismatch ◽  
Early Stage ◽  
Vapour Phase ◽  
Epitaxial Layers ◽  
Prismatic Plane ◽  
Vapour Phase Epitaxy ◽  
Hexagonal Shape ◽  
To Come

AbstractThe misfit between GaN and 6H-SiC is 3.5% instead of 16% with sapphire, the epitaxial layers have similar densities of defects on both substrates. Moreover, the lattice mismatch between AlN and 6H-SiC is only 1%. Therefore, epitaxial layer overgrowth (ELO) of GaN on AlN/6H-SiC could be a route to further improve the quality of epitaxial layers. AlN has been grown by Halide Vapour Phase Epitaxy (HVPE) on (0001) 6H-SiC, thereafter a dielectric SiO2 mask was deposited and circular openings were made by standard photolithography and reactive ion etching. We have examined GaN layers at an early stage of coalescence in order to identify which dislocations bend and try to understand why. The analysed islands have always the same hexagonal shape, limited by {0110} facets. The a type dislocations are found to fold many times from basal to the prismatic plane, whereas when a+c dislocations bend to the basal plane, they were not seen to come back to a prismatic one.

scholarly journals Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Duc V. Dinh ◽  
Nan Hu ◽  
Yoshio Honda ◽  
Hiroshi Amano ◽  
Markus Pristovsek
Keyword(s):  
Room Temperature ◽  
Optical Emission ◽  
Vapour Phase ◽  
Optical Data ◽  
Bandgap Energy ◽  
X Ray Diffraction ◽  
Vapour Phase Epitaxy ◽  
X Ray ◽  
Metal Organic ◽  
Organic Vapour

Abstract Growth of AlxGa1−xN layers (0 ≤ x ≤ 1) simultaneously on polar (0001), semipolar ($$10\bar{{\rm{1}}}$$ 10 1 ¯ 3) and ($$11\bar{{\rm{2}}}2$$ 11 2 ¯ 2 ), as well as nonpolar ($$10\bar{{\rm{1}}}0$$ 10 1 ¯ 0 ) and ($$11\bar{{\rm{2}}}0$$ 11 2 ¯ 0 ) AlN templates, which were grown on planar sapphire substrates, has been investigated by metal-organic vapour phase epitaxy. By taking into account anisotropic in-plane strain of semi- and non-polar layers, their aluminium incorporation has been determined by x-ray diffraction analysis. Optical emission energy of the layers was obtained from room-temperature photoluminescence spectra, and their effective bandgap energy was estimated from room-temperature pseudo-dielectric functions. Both x-ray diffraction and optical data consistently show that aluminium incorporation is comparable on the polar, semi- and non-polar planes.

Improvements in the structural quality of Al0.48In0.52As grown by low pressure metal-organic vapour-phase epitaxy

1988 ◽  
Vol 3 (3) ◽  
pp. 223-226 ◽  
Author(s):  
J I Davies ◽  
P D Hodson ◽  
A C Marshall ◽  
M D Scott ◽  
R J M Griffiths
Keyword(s):  
Low Pressure ◽  
Vapour Phase ◽  
Structural Quality ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

Three-dimensionally nucleated growth of gallium nitride by low-pressure metalorganic vapour phase epitaxy

2003 ◽  
Vol 258 (3-4) ◽  
pp. 232-250 ◽  
Author(s):  
H.P.D. Schenk ◽  
P. Vennéguès ◽  
O. Tottereau ◽  
T. Riemann ◽  
J. Christen
Keyword(s):  
Gallium Nitride ◽  
Low Pressure ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy

Growth efficiency and distribution coefficient of GaInP–InP epilayers and heterostructures

1992 ◽  
Vol 70 (10-11) ◽  
pp. 783-788 ◽  
Author(s):  
A. Bensaada ◽  
R. W. Cochrane ◽  
R. A. Masut
Keyword(s):  
Distribution Coefficient ◽  
Growth Process ◽  
Growth Parameters ◽  
Structural Data ◽  
Growth Efficiency ◽  
Vapour Phase ◽  
X Ray Diffraction ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

We have prepared GaInP epilayers on InP by low pressure metal-organic vapour-phase epitaxy to explore the structural, electrical, and optical properties of this relatively little-studied combination. In this paper, we focus on the growth process of GaInP by examining both single thick epilayers on InP as well as a number of double barriers of GaInP–InP prepared from two different trimethylindium (TMIn) sources. High-resolution X-ray diffraction (HRXRD) has been used to extract layer compositions and thicknesses and. consequently, the growth rates and efficiencies of the binary and ternary layers. In general, HRXRD indicates completely constrained heterostructures of high quality. Combining the growth parameters with the structural data leads to the determination of the Ga distribution coefficient during growth of the ternary compound that is found to depend strongly on the quality and stability of the TMIn source. Results from two series of epilayer depositions using the two TMIn sources are presented to illustrate the strong connection between the quality of the source material and the growth process of the epilayers.

Characterization of Sub-Surface Structures by Double Crystal X-Ray Diffraction

1986 ◽  
Vol 82 ◽  
Author(s):  
D.K. Bowen ◽  
M.J. Hill ◽  
B.K. Tanner
Keyword(s):  
Vapour Phase ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Vapour Phase Epitaxy ◽  
X Ray ◽  
Glancing Angle ◽  
Graded Layers ◽  
Superlattice Structures

ABSTRACTThe application of double crystal X-ray diffractometry and computer simulation to the characterization of lattice parameter variations through the thickness of heteroepitaxial layers is reviewed. The sensitivity is demonstrated in studies of graded layers grown by vapour phase epitaxy. Capping layers significantly affect rocking curves from superlattice structures. The use of glancing angle diffraction to characterize thin, low period multilayers is examined.

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