Theoretical Study of Gas-Phase Thermodynamics Relevant to Silicon Carbide Chemical Vapor Deiposition

1991 ◽  
Vol 250 ◽  
Author(s):  
Mark D. Allendorf ◽  
Carl F. Melius
Keyword(s):  
Silicon Carbide ◽  
Gas Phase ◽  
Theoretical Study ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Equilibrium Calculations

AbstractEquilibrium calculations are reported for conditions typical of silicon carbide (SiC) deposition from mixtures of silane and hydrocarbons. Included are 34 molecules containing both silicon and carbon, allowing an assessment to be made of the importance of organosilicon species (and organosilicon radicals in particular) to the deposition process. The results are used to suggest strategies for improved operation of SiC CVD processes.

Kinetic study of silicon carbide deposited from methyltrichlorosilane precursor

1994 ◽  
Vol 9 (1) ◽  
pp. 104-111 ◽  
Author(s):  
Ching Yi Tsai ◽  
Seshu B. Desu ◽  
Chien C. Chiu
Keyword(s):  
Silicon Carbide ◽  
Gas Phase ◽  
Present Model ◽  
Equilibrium Constants ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Reaction Scheme ◽  
Phase Decomposition ◽  
Reaction Constants ◽  
Kinetics Of

The kinetics of silicon carbide (SiC) deposition, in a hot-wall chemical vapor deposition (CVD) reactor, were modeled by analyzing our own deposition rate data as well as reported results. In contrast to the previous attempts which used only the first order lumped reaction scheme, the present model incorporates both homogeneous gas phase and heterogeneous surface reactions. The SiC deposition process was modeled using the following reactions: (i) gas phase decomposition of methyltrichlorosilane (MTS) molecules into two major intermediates, one containing silicon and the other containing carbon, (ii) adsorption of the intermediates onto the surface sites of the growing film, and (iii) reaction of the adsorbed intermediates to form silicon carbide. The equilibrium constant for the gas phase decomposition process was divided into the forward and backward reaction constants as 2.0 × 1025 exp[(448.2 kJ/mol)/RT] and 1.1 × 1032 exp[(-416.2 kJ/mol)/RT], respectively. Equilibrium constants for the surface adsorption reactions of silicon-carrying and carbon-carrying intermediates are 0.5 × 1011 exp[(-21.6 kJ/mol)/RT] and 7.1 × 109 exp[(-33.1 kJ/mol)/RT], while the rate constant for the surface reaction of the intermediates is 4.6 × 105 exp[(-265.1 kJ/mol)/RT].

Modeling analysis of gas phase nucleation in silicon carbide chemical vapor deposition

1999 ◽  
Vol 61-62 ◽  
pp. 176-178 ◽  
Author(s):  
A.N Vorob’ev ◽  
A.E Komissarov ◽  
A.S Segal ◽  
Yu.N Makarov ◽  
S.Yu Karpov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Modeling Analysis ◽  
Phase Nucleation

Doping of phosphorus in chemical-vapor-deposited silicon carbide layers: A theoretical study

2005 ◽  
Vol 87 (21) ◽  
pp. 212114 ◽  
Author(s):  
T. Hornos ◽  
A. Gali ◽  
R. P. Devaty ◽  
W. J. Choyke
Keyword(s):  
Silicon Carbide ◽  
Theoretical Study ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited

Fundamental Evaluation of Gas-Phase Elementary Reaction Models for Silicon Carbide Chemical Vapor Deposition

2017 ◽  
Vol 6 (7) ◽  
pp. P399-P404 ◽  
Author(s):  
Yuichi Funato ◽  
Noboru Sato ◽  
Yasuyuki Fukushima ◽  
Hidetoshi Sugiura ◽  
Takeshi Momose ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Elementary Reaction ◽  
Reaction Models
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