1121. Monitoring of the gas phase in the growth of silicon carbide crystals

Vacuum ◽  
1972 ◽  
Vol 22 (9) ◽  
pp. 432
Keyword(s):  
Silicon Carbide ◽  
Gas Phase

In Situ Optical Analysis of the Gas Phase during the Deposition of Silicon Carbide from Methyltrichlorosilane

1996 ◽  
Vol 143 (5) ◽  
pp. 1654-1661 ◽  
Author(s):  
M. Ganz ◽  
N. Dorval ◽  
M. Lefebvre ◽  
M. Péalat ◽  
F. Loumagne ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Gas Phase ◽  
Optical Analysis

Theoretical Study of Gas-Phase Thermodynamics Relevant to Silicon Carbide Chemical Vapor Deiposition

1991 ◽  
Vol 250 ◽  
Author(s):  
Mark D. Allendorf ◽  
Carl F. Melius
Keyword(s):  
Silicon Carbide ◽  
Gas Phase ◽  
Theoretical Study ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Equilibrium Calculations

AbstractEquilibrium calculations are reported for conditions typical of silicon carbide (SiC) deposition from mixtures of silane and hydrocarbons. Included are 34 molecules containing both silicon and carbon, allowing an assessment to be made of the importance of organosilicon species (and organosilicon radicals in particular) to the deposition process. The results are used to suggest strategies for improved operation of SiC CVD processes.

Modeling analysis of gas phase nucleation in silicon carbide chemical vapor deposition

1999 ◽  
Vol 61-62 ◽  
pp. 176-178 ◽  
Author(s):  
A.N Vorob’ev ◽  
A.E Komissarov ◽  
A.S Segal ◽  
Yu.N Makarov ◽  
S.Yu Karpov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Modeling Analysis ◽  
Phase Nucleation

scholarly journals Синтез наночастиц карбида кремния методом лазерного пиролиза смеси моносилана и ацетилена

2020 ◽  
Vol 54 (11) ◽  
pp. 1233
Author(s):  
И.А. Ершов ◽  
Л.Д. Исхакова ◽  
В.И. Красовский ◽  
Ф.О. Милович ◽  
С.И. Расмагин ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Gas Phase ◽  
Reaction Zone ◽  
Phase Reaction ◽  
Synthesis Reaction ◽  
Flow Ratio ◽  
Laser Synthesis ◽  
Gas Phase Reaction ◽  
Silicon Carbide Nanoparticles ◽  
Sic Particles

The conditions of the laser-enhanced synthesis reaction of silicon carbide nanoparticles are determined and the nanoparticles are characterized. The gas-phase reaction of laser synthesis of SiC particles is observed at SiH4/C2H2 flow ratio in the range of 1.6-3.2. The temperature in the reaction zone was ~1400--1500ºC. Silicon carbide nanoparticles ~6 nm in diameter are produced and their composition is studied.

Fundamental Evaluation of Gas-Phase Elementary Reaction Models for Silicon Carbide Chemical Vapor Deposition

2017 ◽  
Vol 6 (7) ◽  
pp. P399-P404 ◽  
Author(s):  
Yuichi Funato ◽  
Noboru Sato ◽  
Yasuyuki Fukushima ◽  
Hidetoshi Sugiura ◽  
Takeshi Momose ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Elementary Reaction ◽  
Reaction Models

Kinetic Modelling of the Deposition of SiC from Methyltrichlorosilane

1991 ◽  
Vol 250 ◽  
Author(s):  
Stratis V. Sotirchos ◽  
George D. Papasouliotis
Keyword(s):  
Silicon Carbide ◽  
Kinetic Model ◽  
Gas Phase ◽  
Kinetic Modelling ◽  
Reaction Model ◽  
Heterogeneous Reactions ◽  
Reactor Model ◽  
Preliminary Results ◽  
Homogeneous Reactions

AbstractA kinetic model is presented for the deposition of silicon carbide through decomposition of methyltrichlorosilane (MTS). The developed model includes gas phase (homogeneous) reactions that lead to formation of deposition precursors and surface (heterogeneous) reactions that lead or can lead to deposition of silicon carbide, silicon, and carbon. The kinetic model is incorporated in a transport and reaction model for a tubular hot-wall reactor, and the overall reactor model is used to obtain some preliminary results on the effects of pressure and distance in the reactor on the rate of deposition and the composition of the deposit. The results show that the model can reproduce most of the experimental observations of the literature.

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