ABSTRACTPtSi is one of the most used silicides in infrared Schottky barrier detectors due to its low Schottky barrier to p-type Si ( Øb ∼ 0.23 eV). Control of the thickness and uniformity of the silicide layer is fundamental for a good infrared detector performance, since the silicide thickness has to be in the range of 3 to 8 nm. Such thin layers are usually made by evaporation of Pt followed by a furnace annealing. We will show different approaches for fabrication of utra-thin PtSi layers. In all of the processes, high-vacuum sputtering is used for Pt deposition and the silicidation is performed in a rapid thermal annealing system. Smooth and uniform Pt Si layers down to 3 nm thick are formed in this way. It will be shown that the controllability of the thickness during sputter deposition is not a critical issue and the deposition process has a large process window. Moreover, when taking an optimal approach, a large process window can also be found for the RTA step. The implementation of these approaches for device fabrication and some electrial results of diodes made with them will also be presented.
Electrical and photoelectric properties of photocell on base of Schottky barrier contact Au-n-GaAs
