High-temperature buried InP/GaInAsP heterostructure laser diode emitting at 1310 nm

2014 ◽  
Vol 50 (9) ◽  
pp. 888-891 ◽  
Author(s):  
M. G. Vasil’ev ◽  
A. M. Vasil’ev ◽  
A. D. Izotov ◽  
A. A. Shelyakin
Keyword(s):  
High Temperature ◽  
Laser Diode ◽  
Heterostructure Laser

ZnCdSe/ZnSe/ZnMgSSe Separate-Confinement Heterostructure Laser Diode with Various Cd Mole Fractions

1994 ◽  
Vol 33 (Part 2, No. 5A) ◽  
pp. L639-L642 ◽  
Author(s):  
Satoshi Itoh ◽  
Norikazu Nakayama ◽  
Toyoharu Ohata ◽  
Masafumi Ozawa ◽  
Hiroyuki Okuyama ◽  
...  
Keyword(s):  
Laser Diode ◽  
Heterostructure Laser

The Effect of Phase Structures on the Enhanced Red Upconversion Luminescence in NaLuF4:Yb–Er Nanocrystals

2016 ◽  
Vol 16 (4) ◽  
pp. 3965-3968
Author(s):  
Xingyuan Guo ◽  
Weiye Song ◽  
Xueqing Bi ◽  
Shushen Liu ◽  
Shengyan Yin ◽  
...  
Keyword(s):  
Energy Transfer ◽  
High Temperature ◽  
Laser Diode ◽  
Upconversion Luminescence ◽  
Decomposition Reaction ◽  
Energy Transfer Mechanism ◽  
Reaction Method ◽  
Phase Structures ◽  
Temperature Decomposition ◽  
Luminescence Performance

In this work, -NaLuF4:Yb, Er (NLF) nanocomposites (NCs) and -NLF NCs with diameter about ∼13 nm were fabricated by a high temperature decomposition reaction method. The effects of NLF structure on the enhanced red upconversion luminescence performance were investigated. Under 980 nm excitation from a laser diode, the -NLF emitted dominant red UC emission. Furthermore, the possible energy transfer mechanism was proposed on the basis of our experimental results.

High temperature laser diode based on a single sheet of quantum dots

2015 ◽  
Vol 30 (10) ◽  
pp. 105005 ◽  
Author(s):  
N N Ledentsov ◽  
V A Shchukin ◽  
M V Maximov ◽  
Yu M Shernyakov ◽  
A S Payusov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Temperature ◽  
Laser Diode ◽  
Single Sheet
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