Galvanomagnetic Properties of Bismuth–Antimony Films under Conditions of Plane Tensile Strain

Author(s):  
V. M. Grabov ◽  
E. V. Demidov ◽  
V. A. Komarov ◽  
S. V. Senkevich ◽  
A. V. Suslov
Author(s):  
А.В. Суслов ◽  
В.М. Грабов ◽  
В.А. Комаров ◽  
Е.В. Демидов ◽  
С.В. Сенкевич ◽  
...  

The report presents the positions of the conductance and valence band extremes in relation to the chemical potential of the thin bismuth–antimony films (from 0 to 15 at% Sb) on substrates with different thermal expansion. The results are based on the galvanomagnetic properties study of thermal deposited thin films. A significant increase in the concentration of charge carriers in films on substrates with a large thermal expansion was found. The results of calculating the valence band and the conduction band positions at 77 K, depending on the thermal expansion coefficient of the substrate used, are presented. The thin films plane deformation caused by the difference in the film and substrate materials thermal expansion leads to a change in the positions of the conduction band and the valence band of the films relative to their positions in a single crystal with corresponding composition


Author(s):  
Д.Д. Ефимов ◽  
В.А. Комаров ◽  
Н.С. Каблукова ◽  
Е.В. Демидов ◽  
М.В. Старицын

We investigated the effect of the antimony underlayer (10 nm) on the structure and galvanomagnetic properties of bismuth-antimony solid solution thin films (3-12 at.% Sb). The films were obtained on mica substrates by discrete vacuum evaporation and zone recrystallization. We found that the misorientation of the crystallite plane (111) increases relative to the film plane as well as the crystallite sizes decrease. The antimony underlayer does not change the crystallographic orientation during recrystallization and increases the film adhesion. The change in the galvanomagnetic coefficients when using a sublayer is due to the classical dimensional effect and increasing plane deformation.


1999 ◽  
Vol 09 (PR10) ◽  
pp. Pr10-247-Pr10-249 ◽  
Author(s):  
B. Korin-Hamzic ◽  
M. Basletić ◽  
N. Francetić ◽  
A. Hamzić ◽  
K. Bechgaard

Author(s):  
Van Min Nguyen ◽  
V. A. Eremenko ◽  
M. A. Sukhorukova ◽  
S. S. Shermatova

The article presents the studies into the secondary stress field formed in surrounding rock mass around underground excavations of different cross-sections and the variants of principal stresses at a mining depth greater than 1 km. The stress-strain analysis of surrounding rock mass around development headings was performed in Map3D environment. The obtained results of the quantitative analysis are currently used in adjustment of the model over the whole period of heading and support of operating mine openings. The estimates of the assumed parameters of excavations, as well as the calculations of micro-strains in surrounding rock mass by three scenarios are given. During heading in the test area in granite, dense fracturing and formation of tensile strain zone proceeds from the boundary of e ≥ 350me and is used to determine rough distances from the roof ( H roof) and sidewalls ( H side) of an underground excavation to the 3 boundary e = 350me (probable rock fracture zone). The modeling has determined the structure of secondary stress and strain fields in the conditions of heading operations at great depths.


Author(s):  
Mathieu Bertrand ◽  
Francesco Armand Pilon ◽  
Vincent Reboud ◽  
Hans Sigg ◽  
Quang-Minh Thai ◽  
...  

2021 ◽  
Vol 9 (16) ◽  
pp. 5460-5468
Author(s):  
San-Dong Guo ◽  
Wen-Qi Mu ◽  
Yu-Tong Zhu ◽  
Shao-Qing Wang ◽  
Guang-Zhao Wang
Keyword(s):  

Intrinsic piezoelectricity and nontrivial band topology can coexist in monolayer InXO (X = Se and Te), and tensile strain can enhance the piezoelectricity.


Sign in / Sign up

Export Citation Format

Share Document