scholarly journals Блочные и монокристаллические пленки сплава висмут--сурьма 3-12 ат% с подслоем сурьмы

2022 ◽  
Vol 56 (2) ◽  
pp. 156
Author(s):  
Д.Д. Ефимов ◽  
В.А. Комаров ◽  
Н.С. Каблукова ◽  
Е.В. Демидов ◽  
М.В. Старицын
Keyword(s):  
Thin Films ◽  
Solid Solution ◽  
Crystallographic Orientation ◽  
Plane Deformation ◽  
Film Plane ◽  
Galvanomagnetic Properties ◽  
Film Adhesion ◽  
Bismuth Antimony ◽  
Crystallite Sizes ◽  
Zone Recrystallization

We investigated the effect of the antimony underlayer (10 nm) on the structure and galvanomagnetic properties of bismuth-antimony solid solution thin films (3-12 at.% Sb). The films were obtained on mica substrates by discrete vacuum evaporation and zone recrystallization. We found that the misorientation of the crystallite plane (111) increases relative to the film plane as well as the crystallite sizes decrease. The antimony underlayer does not change the crystallographic orientation during recrystallization and increases the film adhesion. The change in the galvanomagnetic coefficients when using a sublayer is due to the classical dimensional effect and increasing plane deformation.

scholarly journals Параметры зонной структуры тонких пленок Bi-=SUB=-1-x-=/SUB=-Sb-=SUB=-x-=/SUB=- (0≤ x≤ 0.15) на подложках с различным температурным расширением

2019 ◽  
Vol 53 (5) ◽  
pp. 616
Author(s):  
А.В. Суслов ◽  
В.М. Грабов ◽  
В.А. Комаров ◽  
Е.В. Демидов ◽  
С.В. Сенкевич ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Valence Band ◽  
Conduction Band ◽  
Chemical Potential ◽  
Plane Deformation ◽  
Charge Carriers ◽  
Galvanomagnetic Properties ◽  
Bismuth Antimony ◽  
The Difference

The report presents the positions of the conductance and valence band extremes in relation to the chemical potential of the thin bismuth–antimony films (from 0 to 15 at% Sb) on substrates with different thermal expansion. The results are based on the galvanomagnetic properties study of thermal deposited thin films. A significant increase in the concentration of charge carriers in films on substrates with a large thermal expansion was found. The results of calculating the valence band and the conduction band positions at 77 K, depending on the thermal expansion coefficient of the substrate used, are presented. The thin films plane deformation caused by the difference in the film and substrate materials thermal expansion leads to a change in the positions of the conduction band and the valence band of the films relative to their positions in a single crystal with corresponding composition

Influence of annealing at temperatures above the solidus temperature on the structure and galvanomagnetic properties of Bi92Sb8 solid-solution thin films

2017 ◽  
Vol 62 (7) ◽  
pp. 1087-1092 ◽  
Author(s):  
V. M. Grabov ◽  
E. V. Demidov ◽  
E. K. Ivanova ◽  
V. A. Komarov ◽  
N. S. Kablukova ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Solution ◽  
Solidus Temperature ◽  
Galvanomagnetic Properties

The use of the method of zone recrystallization under a coating for preparing single-crystal films of bismuth-antimony solid solution

2015 ◽  
Vol 41 (1) ◽  
pp. 10-13 ◽  
Author(s):  
V. M. Grabov ◽  
V. A. Komarov ◽  
N. S. Kablukova ◽  
E. V. Demidov ◽  
A. N. Krushel’nitskii
Keyword(s):  
Solid Solution ◽  
Single Crystal ◽  
Bismuth Antimony ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Zone Recrystallization

The Precipitation of Si in AlCuSi Thin Films

1973 ◽  
Vol 31 ◽  
pp. 34-35 ◽  
Author(s):  
R. M. Anderson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Heat Treatment ◽  
Solid Solution ◽  
Integrated Circuit ◽  
Copper Film ◽  
Solution Concentration ◽  
X Ray ◽  
Silicon Thin Films ◽  
Before And After

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.

Domains and domain nucleation in magnetron-sputtered CoCr thin films

1993 ◽  
Vol 51 ◽  
pp. 1046-1047
Author(s):  
B. G. Demczyk
Keyword(s):  
Thin Films ◽  
Domain Structure ◽  
Magnetic Domain ◽  
Domain Size ◽  
Film Plane ◽  
Magnetic Domain Structure ◽  
Perpendicular Magnetization ◽  
Columnar Grains ◽  
Reversal Mechanism ◽  
Lorentz Transmission Electron Microscopy

CoCr thin films have been of interest for a number of years due to their strong perpendicular anisotropy, favoring magnetization normal to the film plane. The microstructure and magnetic properties of CoCr films prepared by both rf and magnetron sputtering have been examined in detail. By comparison, however, relatively few systematic studies of the magnetic domain structure and its relation to the observed film microstructure have been reported. In addition, questions still remain as to the operative magnetization reversal mechanism in different film thickness regimes. In this work, the magnetic domain structure in magnetron sputtered Co-22 at.%Cr thin films of known microstructure were examined by Lorentz transmission electron microscopy. Additionally, domain nucleation studies were undertaken via in-situ heating experiments.It was found that the 50 nm thick films, which are comprised of columnar grains, display a “dot” type domain configuration (Figure 1d), characteristic of a perpendicular magnetization. The domain size was found to be on the order of a few structural columns in diameter.

Microstructural Study of Thin Films CuFe Obtained by Thermal Evaporation of Nanostructured Milled Powder

2017 ◽  
Vol 47 ◽  
pp. 71-78
Author(s):  
H. Mechri ◽  
Ahmed Haddad ◽  
M. Zergoug ◽  
Mohammed Azzaz
Keyword(s):  
Thin Films ◽  
Solid Solution ◽  
Physical Vapor Deposition ◽  
Thermal Evaporation ◽  
Supersaturated Solid Solution ◽  
Milled Powder ◽  
Mechanically Alloyed ◽  
Glass Substrates ◽  
Milling Duration ◽  
Tungsten Boat

Commercial copper and iron powders were used as starting materials. These powders were mechanically alloyed to obtain Cu(100-x) Fex supersaturated mixture. The milling duration was chosen in such a way as to obtain a nanostructured mixture and to form a supersaturated solid solution of CuFe; the powder mixture was used to deposit CuFe on a glass substrate. The elaboration of our films has been carried out using thermal evaporation process (physical vapor deposition) under 1 × 10-6 mbar vacuum from an electrically heated tungsten boat, using the supersaturated solid solution Cu(100-x) Fex powder obtained by mechanical alloying. The films deposition has been done on glass substrates. In this study, we present the composition effect on the structural and magnetic proprieties of Cu(100-x) Fex powder and thin films. The chemical composition, structural and magnetic proprieties of milled powders and thin films were examined by SEM, TEM, XRD, XRF and VSM.

Structural and Electrical Properties of Titania Thin Films

2014 ◽  
Vol 925 ◽  
pp. 300-303 ◽  
Author(s):  
Sharipah Nadzirah ◽  
Uda Hashim ◽  
N. Malihah
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Titanium Dioxide ◽  
Current Flow ◽  
Sol Gel ◽  
Particle Sizes ◽  
Structural And Electrical Properties ◽  
Crystallite Sizes ◽  
Average Current ◽  
Flow Through

This research studies the properties of titanium dioxide (TiO2) nanoparticles synthesized by two different stabilizers via sol-gel method. Acetic and hydrochloric acids have been used as stabilizers to form two different TiO2 thin films. 100 μm gap of Al IDEs have been fabricated on each annealed TiO2 films. Finally the samples were physically and electrically characterized. Average crystallite sizes of the nanoparticles are 20 and 25 nm for acetic and hydrochloric acid respectively. The average current flow through the devices was extremely small which are around micro-to-nanoampere. It was found that the electrical conductivity increased significantly when particle sizes decreases.

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