Application of the Spectral Ellipsometry Method to Study the Processes of Atomic Layer Deposition

2021 ◽  
Vol 50 (4) ◽  
pp. 230-238
Author(s):  
A. V. Miakonkikh ◽  
E. A. Smirnova ◽  
I. E. Clemente
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Spectral Ellipsometry ◽  
Layer Deposition

Atomic Layer Deposition of Lithium-Silicon-Tin Oxide Nanofilms for High Performance Thin Film Batteries Anodes

2020 ◽  
Vol 299 ◽  
pp. 1058-1063
Author(s):  
Denis Nazarov ◽  
Ilya Mitrofanov ◽  
Maxim Yu. Maximov
Keyword(s):  
Thin Film ◽  
Stainless Steel ◽  
Atomic Layer Deposition ◽  
Tin Oxide ◽  
Oxygen Plasma ◽  
Atomic Layer ◽  
Cycling Performance ◽  
Spectral Ellipsometry ◽  
X Ray ◽  
Layer Deposition

Tin oxide is the most promising material for thin film anodes of Li-ion batteries due to its cycling performance and high theoretical capacity. It is assumed that lithium-tin oxide can demonstrate even higher performance. Lithium-silicon-tin oxide nanofilms were prepared by atomic layer deposition (ALD), using the lithium bis (trimethylsilyl) amide (LiHMDS), tetraethyltin (TET) as a metal containing reagents and ozone or water or oxygen plasma as counter-reactants. Monocrystalline silicon (100) and stainless steel (316SS) were used as supports. The thicknesses of the nanofilms were measured by spectral ellipsometry (SE) and scanning electron microscopy (SEM). It was found that oxygen plasma is the most optimal ALD counter-reactant. The composition and structure were studied by Time-of-Flight Secondary Ion Mass Spectroscopy (ToF-SIMS), X-ray Photoelectron Spectroscopy (XPS) and X-ray diffraction (XRD). The nanofilms contain silicon as impurity, whose source is the ALD precursor (LiHMDS). The nanofilms deposited on stainless steel have shown the high Coulombic efficiency (99.1-99.8%) and cycling performance at a relatively high voltage (0.01 to 2.0V).

Tunability of Atomic Layer Deposition of Yttria-Stabilized Zirconium Oxide for use in Solid Oxide Fuel Cells

2013 ◽  
Vol 6 (1) ◽  
Author(s):  
A. Walter ◽  
R. Xu ◽  
G. Jursich ◽  
C.G. Takoudis
Keyword(s):  
Fuel Cells ◽  
Atomic Layer Deposition ◽  
Solid Oxide Fuel Cells ◽  
Photoelectron Spectroscopy ◽  
Zirconium Oxide ◽  
Atomic Layer ◽  
Solid Oxide ◽  
Oxide Fuel ◽  
Spectral Ellipsometry ◽  
Layer Deposition

Thin films of yttria-stabilized zirconium oxide (YSZ) were successfully deposited using atomic layer deposition (ALD) for use in solid oxide fuel cells (SOFCs). YSZ was deposited on p-Si(100) by ALD using Tris(isopropyl-cyclopentadienyl)yttrium [(iPrCp)3Y] and tris(dimethylamino)cyclopentadienylzirconim [ZyALD] as metal precursors and ozone as oxidant. The normalized ALD cycle ratio of yttria cycles / total cycles used in making these films was varied to investigate the tunability of this process. Spectral ellipsometry was used to measure the thickness of the films. X-ray photoelectron spectroscopy (XPS) analyses were used to evaluate the composition and binding environments of as-deposited YSZ films. The normalized cycle ratio and the yttrium atomic percentage (Y atoms / metal atoms) have a linear relationship with a strong correlation, implying excellent tunability for this process. The binding environment analyses determine the oxidation state of the metals and show that decreasing the cycle ratio decreases the extent of yttrium hydroxidation.

Atomic Layer Deposition of Hafnium Oxide on Silicon and Polymer Fibers at Temperatures below 100o C

2008 ◽  
Vol 2 (1) ◽  
Author(s):  
K. C. Kragh ◽  
A. Kueltzo ◽  
M. Singh ◽  
Q. Tao ◽  
G. Jursich ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Hafnium Oxide ◽  
Atomic Layer ◽  
Polymer Fibers ◽  
Spectral Ellipsometry ◽  
X Ray ◽  
Layer Deposition ◽  
Microscope Images ◽  
Poly Caprolactone

Atomic layer deposition of hafnium oxide from tetrakis (diethylamino) hafnium (TDEAH) and water vapor was employed to create thin films on silicon with reactor temperatures as low as 30o C. Spectral ellipsometry and X-ray photoelectron spectroscopy were used to probe the thickness and composition of these films. Deposition at the same temperature of 30o C was carried out on poly-caprolactone (PCL) nanofibers as a template to examine the possibility of fabricating hafnium oxide nanotubes. Energy dispersive X-ray scans and scanning electron microscope images revealed significant hafnia coverage on the fibers, suggesting that hafnium oxide nanotubes can be formed by means of polymer vaporization after deposition.

Application of Atomic Layer Deposition in Dye-Sensitized Photoelectrosynthesis Cells

2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dye Sensitized ◽  
Layer Deposition

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

One-Dimensional TiO2@GaON Core-Shell Nanowires with Controlled Shell Thickness from Atomic Layer Deposition for Stable and Efficient Photoelectrochemical Water Splitting

2019 ◽  
Author(s):  
Jiajia Tao ◽  
Hong-Ping Ma ◽  
Kaiping Yuan ◽  
Yang Gu ◽  
Jianwei Lian ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Band Gap ◽  
Water Splitting ◽  
Atomic Layer ◽  
Photoelectrochemical Water Splitting ◽  
Core Shell ◽  
Photoelectrochemical Performance ◽  
Highly Efficient ◽  
Layer Deposition ◽  
Shell Nanowires

<div>As a promising oxygen evolution reaction semiconductor, TiO2 has been extensively investigated for solar photoelectrochemical water splitting. Here, a highly efficient and stable strategy for rationally preparing GaON cocatalysts on TiO2 by atomic layer deposition is demonstrated, which we show significantly enhances the</div><div>photoelectrochemical performance compared to TiO2-based photoanodes. For TiO2@20 nm-GaON core-shell nanowires a photocurrent density up to 1.10 mA cm-2 (1.23 V vs RHE) under AM 1.5 G irradiation (100 mW cm-2) has been achieved, which is 14 times higher than that of TiO2 NWs. Furthermore, the oxygen vacancy formation on GaON as well as the band gap matching with TiO2 not only provides more active sites for water oxidation but also enhances light absorption to promote interfacial charge separation and migration. Density functional theory studies of model systems of GaON-modified TiO2 confirm the band gap reduction, high reducibility and ability to activate water. The highly efficient and stable systems of TiO2@GaON core-shell nanowires provide a deeper understanding and universal strategy for enhancing photoelectrochemical performance of photoanodes now available. </div>

Interface Studies of Metal Oxides Grown Directly on Hybrid Perovskite by Atomic Layer Deposition

2019 ◽  
Author(s):  
Claire Burgess ◽  
Farzad Mardekatani Asl ◽  
Valerio Zardetto ◽  
Herbert Lifka ◽  
Sjoerd Veenstra ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxides ◽  
Atomic Layer ◽  
Hybrid Perovskite ◽  
Layer Deposition
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