AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency f max as high as 100 GHz

A novel 4H-SiC MESFET was presented, and its direct current (DC), alternating current (AC) characteristics and power added efficiency (PAE) were studied. The novel structure improves the saturation current (Idsat) and transconductance (gm) by adding a heavily doped region, reduces the gate-source capacitance (Cgs) by adding a lightly doped region and improves the breakdown voltage (Vb) by embedding an insulated region (Si3N4). Compared to the double-recessed (DR) structure, the saturation current, the transconductance, the breakdown voltage, the maximum oscillation frequency (fmax), the maximum power added efficiency and the maximum theoretical output power density (Pmax) of the novel structure is increased by 24%, 21%, 9%, 11%, 14% and 34%, respectively. Therefore, the novel structure has excellent performance and has a broader application prospect than the double recessed structure.

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Advanced design of AlGaN/GaN HEMTs employing mesa field plate for high breakdown voltage

9th International Seminar on Power Semiconductors (ISPS 2008) ◽

10.1049/ic:20080190 ◽

2008 ◽

Author(s):

Kyu-Heon Cho ◽

Young-Hwan Choi ◽

Jiyong Lim ◽

Young-Shil Kim ◽

Min-Koo Han

Keyword(s):

Breakdown Voltage ◽

Field Plate ◽

High Breakdown Voltage ◽

Gan Hemts

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Experimental Results for AlGaN/GaN HEMTs Improving Breakdown Voltage and Output Current by Electric Field Modulation

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3067865 ◽

2021 ◽

pp. 1-6

Author(s):

Baoxing Duan ◽

Luoyun Yang ◽

Yandong Wang ◽

Yintang Yang

Keyword(s):

Electric Field ◽

Breakdown Voltage ◽

Experimental Results ◽

Output Current ◽

Gan Hemts ◽

Field Modulation

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Self-Aligned, Emitter-Edge-Passivated AIGaAs/GaAs Heterojunction Bipolar Transistors with Extrapolated Maximum Oscillation Frequency of 350 GHz

10.1109/drc.1992.671880 ◽

1992 ◽

Cited By ~ 1

Author(s):

W.J. Ho ◽

N.L. Wang ◽

M.F. Chang ◽

A. Sailer ◽

J.A. Higgins

Keyword(s):

Heterojunction Bipolar Transistors ◽

Oscillation Frequency ◽

Bipolar Transistors ◽

Maximum Oscillation Frequency

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MESFETs on H-terminated Single Crystal Diamond

MRS Proceedings ◽

10.1557/proc-1203-j15-03 ◽

2009 ◽

Vol 1203 ◽

Author(s):

Paolo Calvani ◽

Maria Cristina Rossi ◽

Gennaro Conte ◽

Stefano Carta ◽

Ennio Giovine ◽

...

Keyword(s):

Performance Evaluation ◽

Single Crystal ◽

Oscillation Frequency ◽

Diamond Films ◽

Drain Current ◽

Gate Length ◽

Maximum Oscillation Frequency ◽

Single Crystal Diamond ◽

Device Geometry ◽

Rf Performance

AbstractEpitaxial diamond films were deposited on polished single crystal Ib type HPHT diamond plates of (100) orientation by microwave CVD. The epilayers were used for the fabrication of surface channel MESFET structures having sub-micrometer gate length in the range 200-800 nm. Realized devices show maximum drain current and trasconductance values of about 190 mA/mm and 80 mS/mm, respectively, for MESFETs having 200 nm gate length. RF performance evaluation gave cut off frequency of about 14 GHz and maximum oscillation frequency of more than 26 GHz for the same device geometry.

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Breakdown Voltage Analysis of Different Field Plate AlGaN/GaN HEMTs: TCAD based Assessment

2018 IEEE Electron Devices Kolkata Conference (EDKCON) ◽

10.1109/edkcon.2018.8770396 ◽

2018 ◽

Author(s):

Neha ◽

Vandana Kumari ◽

Mridula Gupta ◽

Manoj Saxena

Keyword(s):

Breakdown Voltage ◽

Field Plate ◽

Gan Hemts

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Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Gate Field-Plate, Source Field-Plate and Drain Field Plate

Electronics ◽

10.3390/electronics8040406 ◽

2019 ◽

Vol 8 (4) ◽

pp. 406 ◽

Cited By ~ 8

Author(s):

Biyan Liao ◽

Quanbin Zhou ◽

Jian Qin ◽

Hong Wang

Keyword(s):

Electric Field ◽

Breakdown Voltage ◽

Structural Parameters ◽

High Electron Mobility Transistors ◽

High Electron ◽

Insulator Layer ◽

Field Plate ◽

2D Simulation ◽

Gan Hemts ◽

Drain Field

A 2-D simulation of off-state breakdown voltage (VBD) for AlGaN/GaN high electron mobility transistors (HEMTs) with multi field-plates (FPs) is presented in this paper. The effect of geometrical variables of FP and insulator layer on electric field distribution and VBD are investigated systematically. The FPs can modulate the potential lines and distribution of an electric field, and the insulator layer would influence the modulation effect of FPs. In addition, we designed a structure of HEMT which simultaneously contains gate FP, source FP and drain FP. It is found that the VBD of AlGaN/GaN HEMTs can be improved greatly with the corporation of gate FP, source FP and drain FP. We achieved the highest VBD in the HEMT contained with three FPs by optimizing the structural parameters including length of FPs, thickness of FPs, and insulator layer. For HEMT with three FPs, FP-S alleviates the concentration of the electric field more effectively. When the length of the source FP is 24 μm and the insulator thickness between the FP-S and the AlGaN surface is 1950 nm, corresponding to the average electric field of about 3 MV/cm at the channel, VBD reaches 2200 V. More importantly, the 2D simulation model is based on a real HMET device and will provide guidance for the design of a practical device.

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