Initial growth stages of Si–Ge–Sn ternary alloys grown on Si (100) by low-temperature molecular-beam epitaxy

2015 ◽  
Vol 49 (12) ◽  
pp. 1582-1586 ◽  
Author(s):  
A. R. Tuktamyshev ◽  
V. I. Mashanov ◽  
V. A. Timofeev ◽  
A. I. Nikiforov ◽  
S. A. Teys
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Ternary Alloys ◽  
Growth Stages ◽  
Initial Growth

scholarly journals Исследование встроенных электрических полей на интерфейсе GaSe/GaAs методом спектроскопии фотоотражения

2020 ◽  
Vol 54 (10) ◽  
pp. 1011
Author(s):  
О.С. Комков ◽  
С.А. Хахулин ◽  
Д.Д. Фирсов ◽  
П.С. Авдиенко ◽  
И.В. Седова ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Electric Fields ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Growth Stages ◽  
Initial Growth ◽  
Lower Efficiency ◽  
Gaas Buffer Layer

The built-in electric fields are generated at the GaSe/GaAs heterointerface when GaSe layers are grown by molecular beam epitaxy on GaAs(001) substrates. The existence of these fields is indicated by the clearly observed Franz–Keldysh oscillations in the photoreflectance spectra. The different values of the intensities of these fields (within the 9.8−17.6 kV/cm range) can be associated both with the diffusion of Se atoms into the GaAs substrate (or into the GaAs buffer layer) and the formation of transition sub-monolayers at initial growth stages. No built-in fields were observed at the GaSe/GaAs heterointerface in case of GaSe layers grown on GaAs(111)B and GaAs(112) substrates, which can be explained by the lower efficiency of Se penetration into these substrates in contrast to GaAs(001).

High-quality epitaxial CoFe/Si(111) heterostructures fabricated by low-temperature molecular beam epitaxy

2010 ◽  
Vol 97 (19) ◽  
pp. 192501 ◽  
Author(s):  
Y. Maeda ◽  
K. Hamaya ◽  
S. Yamada ◽  
Y. Ando ◽  
K. Yamane ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
High Quality

Local structures around Er atoms doped in GaAs by low-temperature molecular beam epitaxy

2003 ◽  
Vol 6 (5-6) ◽  
pp. 425-427 ◽  
Author(s):  
K. Ogawa ◽  
H. Ofuchi ◽  
H. Maki ◽  
T. Sonoyama ◽  
D. Inoue ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Local Structures

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Optical properties of quantum wells grown upon gas source molecular‐beam epitaxy low‐temperature buffers

1991 ◽  
Vol 69 (11) ◽  
pp. 7942-7944 ◽  
Author(s):  
K. T. Shiralagi ◽  
R. A. Puechner ◽  
K. Y. Choi ◽  
R. Droopad ◽  
G. N. Maracas
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Gas Source

Effect of As4overpressure on initial growth of gallium arsenide on silicon by molecular beam epitaxy

1989 ◽  
Vol 55 (10) ◽  
pp. 990-992 ◽  
Author(s):  
J. E. Palmer ◽  
G. Burns ◽  
C. G. Fonstad ◽  
C. V. Thompson
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Initial Growth

Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam Epitaxy

1987 ◽  
Vol 94 ◽  
Author(s):  
S. B. Ogale ◽  
M. Thomsen ◽  
A. Madhukar
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Reconstruction ◽  
Molecular Beam ◽  
Ion Beam ◽  
Growth Front ◽  
Kinetic Rates ◽  
Kinetics Of ◽  
Low Temperature Epitaxy

ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.

Sign in / Sign up

Export Citation Format

Share Document