Effect of the Electric Mode and γ Irradiation on Surface-Defect Formation at the Si–SiO2 Interface in a MOS Transistor

2019 ◽  
Vol 53 (1) ◽  
pp. 110-113 ◽  
Author(s):  
N. A. Kulikov ◽  
V. D. Popov
2017 ◽  
Vol 6 (2) ◽  
pp. 16 ◽  
Author(s):  
V. D. Popov

Gamma-radiation is commonly used to study surface defects in MOS transistors. Early experiments show two stages of surface-defect formation in a MOS structure under low-intensity gamma irradiation (Popov & Vin, 2014; Popov, 2016). On the first stage the defect formation take place on interface Si-SiO2 from the oxide side. This process is described by an exponential dependence (Rashkeev et al., 2002). In the second stage “additional” surface defects are formed from the Si side. Radiation defects of silicon migrated to interface Si-SiO2 from the semiconductor.The goal of this paper is investigation of surface-defect formation in a MOS transistor using the changing of surface electron mobility.


Author(s):  
А.В. Кузьминова ◽  
Н.А Куликов ◽  
В.Д. Попов

The effect of gamma radiation on the formation of surface defects at the Si−SiO2 interface in a MOS transistor with a p-channel in the passive mode is considered. Several surface defect formation processes were observed. The role of molecular hydrogen in the gate oxide of the MOS transistor and ”hot“ electrons formed in the near-surface region of silicon is shown.


2019 ◽  
Vol 6 (6) ◽  
pp. 1740-1753 ◽  
Author(s):  
Tong Li ◽  
Zelin Shen ◽  
Yiling Shu ◽  
Xuguang Li ◽  
Chuanjia Jiang ◽  
...  

Exposed crystal facets of TiO2 nanomaterials significantly affect the surface defect formation of the materials during thermal treatment.


2001 ◽  
Vol 40 (Part 2, No. 10A) ◽  
pp. L1051-L1053
Author(s):  
Taisuke Furukawa ◽  
Takumi Nakahata ◽  
Shigemitsu Maruno ◽  
Junji Tanimura ◽  
Yasunori Tokuda ◽  
...  

Author(s):  
J. Hulliger

AbstractDipolar but achiral organic molecules may undergo orientational disorder in the bulk but particularly at the surface of a seed crystal. In cases where the activation energy for reversal of the dipoles in the bulk is much larger than that for reversal at the growing crystal faces, thermodynamic arguments predict that orientational disorder occurring at surface attachment sites can produce metastable but macroscopically large growth sectors, featuring different polar properties than the seed. If the process of nucleation produces a non-pyroelectric symmetry group, then orientational disorder at the surface may give rise to pyroelectric properties during subsequent growth. Similarly, for seeds belonging to a pyroelectric group, orientational disorder can reduce the initial pyroelectric effect. According to this new surface-related mechanism of intrinsic defect formation, acentric and achiral molecules are likely to form real-structures which show a pyroelectric effect, although from a crystallographic point of view, such crystals may be described topologically by e.g. a centric structure. These present views are applied to the space group


RSC Advances ◽  
2015 ◽  
Vol 5 (86) ◽  
pp. 70032-70050 ◽  
Author(s):  
Lei Zhang ◽  
Guoqun Zhao ◽  
Guiwei Dong ◽  
Shuai Li ◽  
Guilong Wang

A multiphase model was established to simulate the bubble morphological evolution in MFIM, and a new phenomenon of surface collapse and pits with the gradient depth was discovered.


1998 ◽  
Vol 507 ◽  
Author(s):  
J Robertson ◽  
M J Powell

ABSTRACTThe growth of a-Si:H and the resulting weak bond and defect formation mechanism is analysed in terms of the adsorbed Sill3 model of growth. It is found that this model describes the surface processes well, but it needs further development to correctly describe the temperature dependence of the formation of defects and weak bonds, since the surface defect density decreases monotonically with temperature and does not show a minimum near 250C. We show that the experimentally observed increase in hydrogen content, weak bond and defect density at lower deposition temperatures can be accounted for by a hydrogen evolution reaction from H2* sites.


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