scholarly journals Исследование радиационных эффектов в МОП-транзиcторе с p-каналом

2020 ◽  
Vol 54 (8) ◽  
pp. 729
Author(s):  
А.В. Кузьминова ◽  
Н.А Куликов ◽  
В.Д. Попов
Keyword(s):  
Surface Defect ◽  
Surface Defects ◽  
Defect Formation ◽  
Surface Region ◽  
Hot Electrons ◽  
Formation Processes ◽  
Passive Mode ◽  
Near Surface ◽  
Mos Transistor

The effect of gamma radiation on the formation of surface defects at the Si−SiO2 interface in a MOS transistor with a p-channel in the passive mode is considered. Several surface defect formation processes were observed. The role of molecular hydrogen in the gate oxide of the MOS transistor and ”hot“ electrons formed in the near-surface region of silicon is shown.

scholarly journals Investigation of the Surface Defects in N-Channel MOS Transistors Under Long-Term Low-Dose-Rate Irradiation

2017 ◽  
Vol 6 (2) ◽  
pp. 16 ◽  
Author(s):  
V. D. Popov
Keyword(s):  
Surface Defect ◽  
Low Dose ◽  
Surface Defects ◽  
Defect Formation ◽  
Exponential Dependence ◽  
Mos Transistors ◽  
Mos Transistor ◽  
Second Stage ◽  
Two Stages

Gamma-radiation is commonly used to study surface defects in MOS transistors. Early experiments show two stages of surface-defect formation in a MOS structure under low-intensity gamma irradiation (Popov & Vin, 2014; Popov, 2016). On the first stage the defect formation take place on interface Si-SiO2 from the oxide side. This process is described by an exponential dependence (Rashkeev et al., 2002). In the second stage “additional” surface defects are formed from the Si side. Radiation defects of silicon migrated to interface Si-SiO2 from the semiconductor.The goal of this paper is investigation of surface-defect formation in a MOS transistor using the changing of surface electron mobility.

Surface Defects in Drawn Aluminum Magnet Wire

1975 ◽  
Vol 97 (1) ◽  
pp. 134-141 ◽  
Author(s):  
R. N. Wright ◽  
A. T. Male
Keyword(s):  
Defect Structure ◽  
Surface Characterization ◽  
Surface Defect ◽  
Potential Role ◽  
Surface Defects ◽  
Repair Process ◽  
Fine Surface ◽  
Magnet Wire ◽  
Characterization Studies

The fine surface defect structure of commercial EC grade aluminum magnet wire has been characterized and four basic component types have been identified. A grading system has been established for each of the component defects. Intermediate process surface characterization studies and laboratory drawing experiments have been performed to clarify the origin of the defects. The potential role of drawing lubrication in repairing or compounding the defect structure has been demonstrated and the mechanics of a drawing related repair process have been clarified through study of the effects of rod drawing on hardness indentations.

Facet-dependent evolution of surface defects in anatase TiO2 by thermal treatment: implications for environmental applications of photocatalysis

2019 ◽  
Vol 6 (6) ◽  
pp. 1740-1753 ◽  
Author(s):  
Tong Li ◽  
Zelin Shen ◽  
Yiling Shu ◽  
Xuguang Li ◽  
Chuanjia Jiang ◽  
...  
Keyword(s):  
Thermal Treatment ◽  
Surface Defect ◽  
Surface Defects ◽  
Defect Formation ◽  
Anatase Tio2 ◽  
Environmental Applications

Exposed crystal facets of TiO2 nanomaterials significantly affect the surface defect formation of the materials during thermal treatment.

Deposition, Defect and Weak Bond Formation Processes in a-Si:H

1998 ◽  
Vol 507 ◽  
Author(s):  
J Robertson ◽  
M J Powell
Keyword(s):  
Hydrogen Evolution Reaction ◽  
Surface Defect ◽  
Defect Formation ◽  
Defect Density ◽  
Bond Formation ◽  
Surface Processes ◽  
Formation Processes ◽  
Weak Bond ◽  
Further Development ◽  
Surface Defect Density

ABSTRACTThe growth of a-Si:H and the resulting weak bond and defect formation mechanism is analysed in terms of the adsorbed Sill3 model of growth. It is found that this model describes the surface processes well, but it needs further development to correctly describe the temperature dependence of the formation of defects and weak bonds, since the surface defect density decreases monotonically with temperature and does not show a minimum near 250C. We show that the experimentally observed increase in hydrogen content, weak bond and defect density at lower deposition temperatures can be accounted for by a hydrogen evolution reaction from H2* sites.

On the Role of Solvent in the Formation of Vacancies on Ibuprofen Crystal Facets

2021 ◽  
Author(s):  
Veselina Marinova ◽  
Geoffrey P. F. Wood ◽  
Ivan Marziano ◽  
Matteo Salvalaglio
Keyword(s):  
Surface Defects ◽  
Defect Formation ◽  
Energetic Cost ◽  
Crystal Facet ◽  
Mechanism Of Defect Formation ◽  
Surface Vacancy ◽  
Racemic Ibuprofen ◽  
Dynamics Simulations ◽  
Role Of Solvent

Surface defects play a crucial role in the process of crystal growth, as the incorporation of growth units generally takes place on under-coordinated sites on the growing crystal facet. In this work, we use molecular dynamics simulations to obtain information on the role of the solvent in the roughening of three morphologically-relevant crystal faces of form I of racemic ibuprofen. To this aim, we devise a computational strategy based on combining independent Well Tempered Metadynamics with Mean Force Integration. This approach enables us to evaluate the energetic cost associated with the formation of a surface vacancy for a set of ten solvents, covering a range of polarities and hydrogen-bonding ability. We find that both the mechanism of defect formation on these facets and the work associated with the process are indeed markedly solvent-dependent. The methodology developed in this work has been designed with the aim of capturing solvent effects at the atomistic scale while maintaining the computational efficiency necessary for implementation in high-throughput computational screenings of crystallization solvents.

Defect Formation During Zn Diffusion into GaAs

1989 ◽  
Vol 163 ◽  
Author(s):  
Martina Luysberg ◽  
W. Jäger ◽  
K. Urban ◽  
M. Perret ◽  
N.A. Stolwijk ◽  
...  
Keyword(s):  
Defect Formation ◽  
Analytical Electron Microscopy ◽  
Surface Region ◽  
Dislocation Loops ◽  
Diffusion Front ◽  
Near Surface ◽  
Zn Diffusion ◽  
Zn Concentration ◽  
Analytical Electron ◽  
Type Dislocation

AbstractThe microstructure induced by the Zn diffusion at 1170 K into doped and undoped semi-insulating GaAs single crystals was characterized for various diffusion times t < 1740 min by analytical electron microscopy. The results were compared with Zn concentration profiles obtained by spreading resistance measurements (SRM) on the same samples. At the diffusion front the formation of prismatic interstitial dislocation loops, dislocation networks, and of cavities partly filled with Ga was observed. Closer to the surface facetted voids and, for the undoped samples, vacancy-type dislocation loops formed. The near surface region of highest Zn-concentration showed a high density of Zn-rich precipitates. A model is presented which accounts .for these observations. It is based on fast interstitial Zn diffusion and the kick-out mechanism for interstitial-substituional exchange.

scholarly journals Ion Scattering Spectrometry

1980 ◽  
Vol 33 (5) ◽  
pp. 843 ◽  
Author(s):  
RJ MacDonald
Keyword(s):  
Interatomic Potential ◽  
Photon Emission ◽  
Target Surface ◽  
Surface Region ◽  
Crystallographic Structure ◽  
Ion Scattering ◽  
Near Surface ◽  
Double Collision ◽  
Neutralization Factor

The scattering of ions from the surface and near surface region is a common method of analyzing solid surfaces. The basic principles of ion scattering spectrometry are reviewed with emphasis on those factors which affect the interpretation of the scattering measurements. In particular we emphasize the role of the interatomic potential and the neutralization factor involved in ion-surface scattering. Several aspects of ion scattering spectrometry are then outlined, including its application to studies of the composition and crystallographic structure of surfaces. Some factors of ion scattering spectrometry peculiar to surfaces are mentioned, e.g. the sequential 'double' collision event. The use of photon emission studies as a means of inferring something of the neutralization processes involved is briefly outlined, emphasizing the study of polarized emission from scattered ions at glancing incidence to the target surface.

Ex situ and in situ defect density measurements of a-Si:H by means of the cavity ring down absorption technique

2001 ◽  
Vol 664 ◽  
Author(s):  
A.H.M. Smets ◽  
J.H. van Helden ◽  
M.C.M. van de Sanden
Keyword(s):  
Surface Defect ◽  
Surface Defects ◽  
Defect Density ◽  
Surface Region ◽  
Ex Situ ◽  
Density Region ◽  
Dual Beam ◽  
Surface Defect Density ◽  
Absorption Technique ◽  
Cavity Ring Down

ABSTRACTFor the first time it is demonstrated that the surface defect density can be measured using the cavity ring down (CRD) absorption technique and it is shown that CRD is more sensitive for surface defects than dual beam photoconductivity (DBP) technique. Ex situ measurements have shown that the surface defects of the oxidized a-Si:H surface are distributed over a surface region with thickness W(d). The obtained surface defect density is 1.0 × 1012 up to 1.4 × 1012 cm-2. During growth the a-Si:H surface defect density region has at least a thickness of 15 nm. During deposition of 15 nm a-Si:H the surface density increases up to a not yet saturated value of 1×1013 cm-2.

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