LaTiO2N nanopowders (NPs) with low surface defect density via nitridation of flame made NPs retaining simple perovskite structure

LaTiO2N NP synthesized from flame made LaTiO3 NP exhibits less absorption background above the optical absorption edge than that synthesized from flame made La2Ti2O7 NP, suggesting a low surface defect density.

Fabrication of pyramidal (111) MAPbBr3 film with low surface defect density using homogeneous quantum-dot seeds

Unique pyramidal MAPbBr3 film is formed by MAPbBr3 seeds. The pyramidal MAPbBr3 film effectively reduces surface defects, eliminating hysteresis from the photodetector.

Decreased Surface Photovoltage of ZnO Photoanode Films via Optimal Annealing Temperature for Enhanced Photoelectrochemical Performance

The electronic structure of semiconducting materials at the electrode/electrolyte interface plays a vital role in the process of photoelectrochemical (PEC) water splitting. In this work, we could reliably tune the surface defect density of ZnO films through changing the annealing temperature, thereby optimizing the PEC performance. The surface photovoltage (SPV) of ZnO films could be obtained by Kelvin probe force microscopy and compared to insightfully understand the effect of the annealing temperature on the performance of the electrode in PEC water splitting. The minimum SPV annealed at 450°C indicated low surface defect density, eventually resulting in an enhanced photoelectrochemical performance. The applied bias photo-to-current efficiency of ZnO films annealed at 450°C reached 0.237%, about 7.4 times that of unannealed ZnO photoanode. This work provides an effective method for the rational fabrication of efficient photoelectrodes for the realization of high-performance photoelectrochemical water splitting.

Зависимость самоиндукции тонкой цилиндрической проволоки из металла от механизма поверхностного рассеяния электронов

The self-induction of a thin cylindrical metallic wire has been calculated. A general case when the ratio of the electron free path to the wire radius may take an arbitrary value has been considered. The dependence of the regular reflectance on surface defect density and angle of incidence of electrons on the wire’s inner surface has been taken for boundary conditions of the problem.

Revitalizing spherical Au@Pd nanoparticles with controlled surface-defect density as high performance electrocatalysts

This is the first report of surface-defect dependent performance of Au@Pd nanoparticles with modulated sizes and surface-defect densities.

Reduction in Background Carrier Concentration for 4H-SiC C-face Epitaxial Growth

ABSTRACT Reduction in background carrier concentration has been investigated for 4H-SiC C-face epitaxial growth in order to be applied for ultra-high voltage power devices. Optimizing epitaxial growth parameters made it possible to achieve 7.6x1013 cm-3 as the background carrier concentration within a whole area of specular 3-inch wafers. In addition to the background carrier concentration reduction, epitaxial film thickness variation, surface defect density and the carrier lifetime have been confirmed to fulfill the requirements for the devices.