Localized States near a Thin Layer with the Nonlinear Properties Separating Nonlinear Focusing and Defocusing Media

2019 ◽  
Vol 61 (4) ◽  
pp. 495-499 ◽  
Author(s):  
S. E. Savotchenko
1994 ◽  
Vol 358 ◽  
Author(s):  
Ruth Y. A. Zhang ◽  
J. Strozier ◽  
C. Horton ◽  
A. Ignatiev

ABSTRACTDisordered thin layer GaAs/AlAs superlattices with various disorder periods have been grown using MBE. The disorder was introduced by varying the thickness of GaAs and AlAs layers in the growth direction in various specific but randomly generated finite disorder sequences. The photoluminescence spectra of these disordered superlattice samples showed a sharp peak at the high energy side and a broad peak at the low energy side. The temperature, excitation, and disorder sequence dependence of the photoluminescence spectra indicates that the sharp peak is due to the pseudo-direct exciton emission, and the broad peak is strongly related to the localized states induced by disorder. In addition, the results demonstrate that the luminescence intensity of disordered superlattices can be improved by up to two orders of magnitude over that of ordered short period superlattices. Finally, we propose a kinetic model for the state population and find that the photoluminescence spectra can be well described by this model.


Author(s):  
Masanori Yamagiwa ◽  
Qiang Yu ◽  
Masato Fujita

Silicon Carbide Power (SiC) Devices which are operable under high temperature are focused, since the cooling system for the power modules can be miniaturized. In the conventional power devices, the thermal stress that is caused by the thermal expansion mismatch between the Si chip and the substrate can be absorbed by the deformation of solder joint. As a result, the thermal fatigue reliability of the conventional structures is secured. However, the solder materials cannot be used to mount the high temperature operable device like SiC because the operating temperature is higher than their melting temperature. In this study, a kind of Ag nanoparticle thin layer joint is proposed to the mount high temperature operable device. The feature of the Ag nanoparticle is to joint the chip on the substrate by low temperature sintering, and the melting point of the thin layer after mounting process is equal to the bulk Ag. To evaluate the reliability potential of proposed structure, the nonlinear material properties of the thin layer is required. However, it is difficult to measure these properties by the current method. Since it is considered the thin layer has different micro structure from that of the bulk Ag, and it is difficult to prepare a bulk specimen made of the Ag nanoparticle material. Therefore, it is necessary to measure the properties of Ag nanoparticle in the state of a thin layer. In this research, a new approach was proposed to measure the nonlinear properties in the state of thin layer by using a bi-metal fixture which is composed of two different materials whose CTEs are different. When the fixture is heated, micro displacement can be generated between two materials. The thin layer which is formed between the two metals in the fixture deformed in shear direction by the displacement. During the heating, the shear deformation of the thin layer is measured by a digital image correlation method. The load on the thin layer is measured by strain gauge attached at fixture. In this study, the nonlinear properties of Ag nanoparticle thin layer were measured by this method. In addition, properties of solder were measured by this method too as a reference, and the results were compared with the property of bulk solder to confirm the accuracy of the method using bi-metal fixture.


2019 ◽  
Vol 89 (9) ◽  
pp. 1307
Author(s):  
С.Е. Савотченко

It is shown that the localized and quasi-local stationary states exist near a thin defect layer with nonlinear properties separating a linear medium from a non-linear medium of Kerr type. Localized states are characterized by a monotonically decreasing field amplitude on both sides of the interface. Quasi-local states are described by a field in the form of a standing wave in a linear medium and monotonously decreasing in a nonlinear medium. The contacts with nonlinear self-focusing and defocusing media are analyzed. The mathematical formulation of the proposed model is a system of linear and nonlinear Schrödinger equations with a potential that is nonlinear with respect to the field and which simulates a thin defect layer with nonlinear properties. Dispersion relations determining the energy of local and quasi-local states are obtained. The expressions for energies were obtained explicitly in limiting cases and the conditions for their existence were indicated.


2018 ◽  
Vol 32 (10) ◽  
pp. 1850120 ◽  
Author(s):  
S. E. Savotchenko

We consider the nonlinear excitation localized near the thin layer with nonlinear properties separated by different nonlinear media. The excitations are described by nonlinear Schrödinger equation (NLSE) with nonlinear potential. The problem is reduced to the solution of the NLSE with the boundary conditions of a special kind. We obtain the exact solutions of NLSEs satisfying the boundary conditions. We show that the existence of nonlinear localized excitations of four types is possible in a wide energy range. We derive the energy of localized excitations in the explicit form in the long-wave approximation. The conditions of localized state existence are found.


Author(s):  
William J. Baxter

In this form of electron microscopy, photoelectrons emitted from a metal by ultraviolet radiation are accelerated and imaged onto a fluorescent screen by conventional electron optics. image contrast is determined by spatial variations in the intensity of the photoemission. The dominant source of contrast is due to changes in the photoelectric work function, between surfaces of different crystalline orientation, or different chemical composition. Topographical variations produce a relatively weak contrast due to shadowing and edge effects.Since the photoelectrons originate from the surface layers (e.g. ∼5-10 nm for metals), photoelectron microscopy is surface sensitive. Thus to see the microstructure of a metal the thin layer (∼3 nm) of surface oxide must be removed, either by ion bombardment or by thermal decomposition in the vacuum of the microscope.


1972 ◽  
Vol 33 (C3) ◽  
pp. C3-21-C3-25 ◽  
Author(s):  
F. BASSANI

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-383-C4-386 ◽  
Author(s):  
S. G. Bishop ◽  
B. V. Shanabrook ◽  
U. Strom ◽  
P. C. Taylor

Sign in / Sign up

Export Citation Format

Share Document