Effect of cobalt 60 and 1 MeV electron irradiation on silicon photodiodes/solar cells

2002 ◽  
Vol 80 (12) ◽  
pp. 1591-1599 ◽  
Author(s):  
A M Saad

Using 10–60 krad doses of cobalt 60 gamma radiation, the effect of simulated space radiation on 1 mm2 active area silicon photodiodes with a sapphire window is studied. The diodes will be used to control the laser output of a space experiment in geostationary orbit. The effect of 1 MeV electron irradiation with various fluences on 100 mm2 silicon photodiodes/solar cells, which were used to control the attitude of a satellite in space, is also studied here. Fluences ranging from 3 x 1014 to 1 x 1015 cm–2 of 1 MeV energy, caused a decrease in the short-circuit current, i.e., increasing the percentage of deterioration from 12% to 20% at a room-temperature measurement. Exposure to the gamma irradiation yields almost no degradation for the electro-optical performance of the devices. The manufacturing processes of the detectors and their electro-optical I–V characteristics such as fill factor, responsivity, and dark current are presented here. Electro-optical tests were also done at intermediate levels of irradiation. High stability and high quality of the photodiodes were achieved prior to and after irradiation. PACS No.: 84.60J

Materials ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 363
Author(s):  
Min-Seok Han ◽  
Zhihai Liu ◽  
Xuewen Liu ◽  
Jinho Yoon ◽  
Eun-Cheol Lee

Lead(II)-acetate (Pb(Ac)2) is a promising lead source for the preparation of organolead trihalide perovskite materials, which avoids the use of inconvenient anti-solvent treatment. In this study, we investigated the effect of cesium doping on the performance of Pb(Ac)2-based perovskite solar cells (PSCs). We demonstrate that the quality of the CH3NH3PbI3 perovskite film was improved with increased crystallinity and reduced pinholes by doping the perovskite with 5 mol% cesium. As a result, the power conversion efficiency (PCE) of the PSCs was improved from 14.1% to 15.57% (on average), which was mainly induced by the significant enhancements in short-circuit current density and fill factor. A PCE of 18.02% was achieved for the champion device of cesium-doped Pb(Ac)2-based PSCs with negligible hysteresis and a stable output. Our results indicate that cesium doping is an effective approach for improving the performance of Pb(Ac)2-based PSCs.


2013 ◽  
Vol 665 ◽  
pp. 330-335 ◽  
Author(s):  
Ripal Parmar ◽  
Dipak Sahay ◽  
R.J. Pathak ◽  
R.K. Shah

The solar cells have been used as most promising device to convert light energy into electrical energy. In this paper authors have attempted to fabricate Photoelectrochemical solar cell with semiconductor electrode using TMDCs. The Photoelectrochemical solar cells are the solar cells which convert the solar energy into electrical energy. The photoelectrochemical cells are clean and inexhaustible sources of energy. The photoelectrochemical solar cells are fabricated using WSe2crystal and electrolyte solution of 0.025M I2, 0.5M NaI, 0.5M Na2SO4. Here the WSe2crystals were grown by direct vapour transport technique. In our investigations the solar cell parameters like short circuit current (Isc) and Open circuit voltage (Voc) were measured and from that Fill factor (F.F.) and photoconversion efficiency (η) are investigated. The results obtained shows that the value of efficiency and fill factor of solar cell varies with the illumination intensities.


Author(s):  
Nur Shakina Mohd Shariff ◽  
Puteri Sarah Mohamad Saad ◽  
Mohamad Rusop Mahmood

There has been an increasing interest towards organic solar cells after the discovery of conjugated polymer and bulk-heterojunction concept. Eventhough organic solar cells are less expensive than inorganic solar cells but the power conversion energy is still considered low. The main objective of this research is to investigate the effect of the P3HT’s thickness and concentration towards the efficiency of the P3HT:Graphene solar cells. A simulation software that is specialize for photovoltaic called SCAPS is used in this research to simulate the effect on the solar cells. The solar cell’s structure will be drawn inside the simulation and the parameters for each layers is inserted. The result such as the open circuit voltage (Voc), short circuit current density (Jsc), fill factor (FF), efficiency (η), capacitance-voltage (C-V) and capacitance-frequency (C-f) characteristic will be calculated by the software and all the results will be put into one graph.


2014 ◽  
Vol 665 ◽  
pp. 111-114 ◽  
Author(s):  
Ying Huang ◽  
Xiao Ming Shen ◽  
Xiao Feng Wei

In this paper, InAlN/Si single-heterojunction solar cells have been theoretically simulated based on wxAMPS software. The photovoltaic parameters, such as open circuit voltage, short circuit current, fill factor and conversion efficiency were investigated with changing the indium content and thickness of n-InAlN layer. Simulation results show that the optimum efficiency of InAlN/Si solar cells is 23.1% under AM 1.5G spectral illuminations, with the indium content and thickness of n-InAlN layer are 0.65 and 600nm, respectively. The simulation would contribute to design and fabricate high efficiency InAlN/Si solar cells in experiment.


2015 ◽  
Vol 25 (2) ◽  
pp. 139
Author(s):  
Tran Thi Thao ◽  
Vu Thi Hai ◽  
Nguyen Nang Dinh ◽  
Le Dinh Trong

By using spin-coating technique, a low bandgap conjugated polymer, poly[2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopen-ta[2,1-b;3,4-b′]dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)] (PCPDTBT)  and its composite thin films have been prepared. The optical absorption and photoconductive properties with over a wide spectral range, from 350 to 950  nm, were characterized. The obtained results showed that PCPDTBT:10 wt% CdSe  composite is the most suitable for efficient light-harvesting in polymer-based photovoltaic cells. The photoelectrical conversion efficiency (PCE) of the device with  a multilayer structure of ITO/PEDOT/ PCPDTBT:CdSe /LiF/Al  reached a value as large as 1.34% with an open-circuit voltage (Voc) = 0.57 V, a short-circuit current density (Jsc) = 4.29 mA/cm2, and a fill factor (FF) = 0.27. This suggests a useful application in further fabrication of quantum dots/polymers based solar cells.


2021 ◽  
Vol 5 (3) ◽  
pp. 242-250
Author(s):  
D. Sergeyev ◽  
K. Shunkeyev ◽  
B. Kuatov ◽  
N. Zhanturina

In this paper, the features of the characteristics of model thin-film solar cells based on the non-toxic multicomponent compound CuZn2AlS4 (CZAS) are considered. The main parameters (open-circuit voltage, short-circuit current, fill factor, efficiency) and characteristics (quantum efficiency, current-voltage characteristic) of thin-film solar cells based on CZAS have been determined. The minimum optimal thickness of the CZAS absorber is found (1-1.25 microns). Deterioration of the performance of solar cells with an increase in operating temperature (280-400 K) is shown. It is revealed that in the wavelength range of 390-500 nm CZAS has a high external quantum efficiency, which allows its use in designs of multi-junction solar cells designed to absorb solar radiation in the specified range. It is shown that the combination of CZAS films with a buffer layer of non-toxic ZnS increases the performance of solar cells.


2011 ◽  
Vol 23 (40) ◽  
pp. 4636-4643 ◽  
Author(s):  
Zhicai He ◽  
Chengmei Zhong ◽  
Xun Huang ◽  
Wai-Yeung Wong ◽  
Hongbin Wu ◽  
...  

2015 ◽  
Vol 761 ◽  
pp. 341-346 ◽  
Author(s):  
Ahmad Aizan Zulkefle ◽  
Maslan Zainon ◽  
Zaihasraf Zakaria ◽  
Mohd Ariff Mat Hanafiah ◽  
Nurul Huda Abdul Razak ◽  
...  

This paper presents the performance between silicon germanium (SiGe) and crystalline germanium (Ge) solar cells in terms of their simulated open circuit voltage, short circuit current density, fill factor and efficiency. The PC1D solar cell modeling software has been used to simulate and analyze the performance for both solar cells, and the total thickness is limited to 1μm of both SiGe and Ge solar cells. The Si0.1Ge0.9 thickness is varied from 10nm to 100nm to examine the effect of Si0.1Ge0.9 thickness on SiGe solar cell. The result of simulation exhibits the SiGe solar cell give a better performance compared to Ge solar cell. The efficiency of 9.74% (VOC = 0.48V, JSC = 27.86mA/cm2, FF =0.73) is achieved with Si0.1Ge0.9 layer of 0.1μm in thickness whilst 2.73% (VOC = 0.20V, JSC = 27.31mA/cm2, FF =0.50) efficiency is obtained from Ge solar cell.


2014 ◽  
Vol 92 (7/8) ◽  
pp. 913-916 ◽  
Author(s):  
V. Smirnov ◽  
A. Lambertz ◽  
F. Finger

We present the development and application of n-type hydrogenated microcrystalline silicon oxide (μc-SiOx:H) in semitransparent bifacial microcrystalline silicon (μc-Si:H) solar cells. Semitransparent bifacial solar cells are of interest for a number of technical applications like building integration or concentrator devices, but also can offer new insight into solar cell properties due to the possibility to illuminate the cell from both sides. Appropriately selected μc-SiOx:H n-layers with low refractive index and high optical band gap allow the reduction of the reflection of the cells and improve short circuit current density (JSC) and conversion efficiencies. The quality of n-type μc-SiOx:H window layers is demonstrated in solar cells with highly reflective ZnO/Ag contacts. High JSC values of 24.8 mA/cm2 and efficiencies of 9.5% are obtained for 1 μm thick solar cells.


Photonics ◽  
2021 ◽  
Vol 9 (1) ◽  
pp. 3
Author(s):  
Genjie Yang ◽  
Dianli Zhou ◽  
Jiawen Li ◽  
Junsheng Yu

The quality of active layer film is the key factor affecting the performance of perovskite solar cells. In this work, we incorporated CsPbI3 quantum dots (QDs) materials into the MAPbI3 perovskite precursor to form photoactive layer. On one hand, CsPbI3 QDs can be used as nucleation center to enhance the compactness of the perovskite film, and on the other hand, partially CsPbI3 QDs can be dissociated as anions and cations to passivate vacancy defects in the perovskite active layer. As a result, the film quality of the active layer was improved remarkably, thus exciton recombination was reduced, and carrier transfer increased accordingly. The devices based on doped-CsPbI3 QDs film had higher short circuit current, open circuit voltage and filling factor. Finally, the power conversion efficiency (PCE) was greatly enhanced from 14.85% to 17.04%. Furthermore, optimized devices also exhibited better stability. This work provides an effective strategy for the processing of high-quality perovskite films, which is of great value for the preparation and research of perovskite photoelectronic devices.


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