THE EFFECT OF PRESSURE ON THE ELECTRICAL RESISTANCE OF RUBIDIUM

1957 ◽  
Vol 35 (6) ◽  
pp. 720-729 ◽  
Author(s):  
J. S. Dugdale ◽  
J. A. Hulbert
Keyword(s):  
Low Temperature ◽  
Electrical Resistance ◽  
Room Temperature ◽  
Residual Resistivity ◽  
Effect Of Pressure ◽  
Temperature Range ◽  
Fluid State

By using helium in both the solid and the fluid state as a pressure-transmitting medium, it has been possible to measure the resistance of rubidium over the temperature range from 2° K. to room temperature at pressures up to 2500 atmospheres. In particular the effect of pressure on the transition at ~200° K., on the low temperature ideal resistivity, and on the residual resistivity was examined.

scholarly journals A novel looped low-temperature heat-driven thermoacoustic refrigerator operating in room temperature range

2019 ◽  
Vol 158 ◽  
pp. 1653-1659 ◽  
Author(s):  
Huizhi Wang ◽  
Guoyao Yu ◽  
Jianying Hu ◽  
Zhanghua Wu ◽  
Mingyu Hou ◽  
...  
Keyword(s):  
Low Temperature ◽  
Room Temperature ◽  
Temperature Range ◽  
Temperature Heat ◽  
Thermoacoustic Refrigerator

Effect of Pressure on the Low-Temperature Electrical Resistance of Pure Pd and Very Dilute Pd: Ni Alloys

1973 ◽  
Vol 7 (1) ◽  
pp. 511-524 ◽  
Author(s):  
R. A. Beyerlein ◽  
D. Lazarus
Keyword(s):  
Low Temperature ◽  
Electrical Resistance ◽  
Effect Of Pressure ◽  
Ni Alloys

THE EFFECT OF PRESSURE ON THE ELECTRICAL RESISTANCE OF LITHIUM

1963 ◽  
Vol 41 (8) ◽  
pp. 1381-1384 ◽  
Author(s):  
D. Gugan
Keyword(s):  
Hydrostatic Pressure ◽  
Electrical Resistance ◽  
Low Temperatures ◽  
Pressure Coefficient ◽  
Residual Resistivity ◽  
Effect Of Pressure ◽  
Dilute Alloys

The change of resistance of lithium with hydrostatic pressure has been studied at low temperatures. Anomalous results have been found at all temperatures. The pressure coefficient of residual resistivity of dilute alloys of magnesium in lithium has been found to depend on the structure of the parent lattice.

Raman microspectroscopy of noncancerous and cancerous human breast tissues. Identification and phase transitions of linoleic and oleic acids by Raman low-temperature studies

The Analyst ◽  
2015 ◽  
Vol 140 (7) ◽  
pp. 2134-2143 ◽  
Author(s):  
Beata Brozek-Pluska ◽  
Monika Kopec ◽  
Jakub Surmacki ◽  
Halina Abramczyk
Keyword(s):  
Phase Transitions ◽  
Low Temperature ◽  
Room Temperature ◽  
Raman Microspectroscopy ◽  
Vibrational Properties ◽  
Human Breast ◽  
Temperature Range ◽  
Breast Tissues

We present the results of Raman studies in the temperature range of 293–77 K on vibrational properties of linoleic and oleic acids and Raman microspectroscopy of human breast tissues at room temperature.

THE PHOTOLYSIS OF AZOISOPROPANE

1953 ◽  
Vol 31 (4) ◽  
pp. 377-384 ◽  
Author(s):  
R. W. Durham ◽  
E. W. R. Steacie
Keyword(s):  
Activation Energy ◽  
Room Temperature ◽  
Excited Molecule ◽  
Energy Difference ◽  
Effect Of Pressure ◽  
Temperature Range ◽  
Excited Molecules

Azoisopropane has been photolyzed by 3600 Å radiation over the temperature range 30–120 °C. The effect of pressure indicates an excited molecule mechanism. Excited molecules which decompose give nitrogen and isopropyl radicals; the latter either combine, disproportionate, or react with azoisopropane. The activation energy difference between the two reactions[Formula: see text]has been found to be 6.5 ± 0.5 kcal. per mole.The difference in activation energy between the disproportionation and combination reactions is rendered ambiguous by the possibility of C3H7.N:N existing at the lower temperatures; but this is certainly small. The ratio of the rates of the two reactions is 0.5 at room temperature.

A Simple Cryostat

1961 ◽  
Vol 14 (4) ◽  
pp. 527
Author(s):  
AS Buchanan ◽  
F Creutzberg
Keyword(s):  
Low Temperature ◽  
Room Temperature ◽  
Temperature Range

A simple all-glass cryostat, based on the LeRoy low-temperature fractionating column, is described. It can be used for the separation, purification, and the determination of vapour pressures of volatile and gaseous compounds in the temperature range -196 �C to room temperature. The vapour pressures of boron trimethyl have been remeasured and the reliability of Stock's data is confirmed.

Damping Capacity of Fe-Ga Alloys

2011 ◽  
Vol 228-229 ◽  
pp. 937-941 ◽  
Author(s):  
Fang Mei Ling ◽  
Jie Zhu ◽  
Li Ji Heng ◽  
Gao Xue Xu
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Wide Temperature Range ◽  
Room Temperature ◽  
Damping Capacity ◽  
Torsion Pendulum ◽  
Temperature Peak ◽  
Temperature Range ◽  
Computer Controlled ◽  
Increasing Temperature

The damping capacity of Fe-Ga rods and sheets has been studied using a computer-controlled automatic inverted torsion pendulum instruments in a wide temperature range in a series of frequency. The frequency and temperature has different influence on the damping capacity of solidified Fe83Ga17 rods and (Fe83Ga17)97.25Cr2B0.75 sheets. The damping capacity of all specimens increased with frequencies. The solidified Fe-Ga rods showed an obvious low-temperature peak and a potential high-temperature peak with increasing temperature. However, the damping capacity of Fe-Ga sheets kept steady in a wide temperature range and then rapidly increased on further heating above 400°C. Damping capacity of about 0.02 was obtained in both Fe-Ga rods and sheets at temperatures from room temperature to 500°C. Thus, The Fe-Ga alloys are considered to be a class of promising high damping alloys.

Defect Evolution in Ion Irradiated 6H-SiC Epitaxial Layers

2005 ◽  
Vol 483-485 ◽  
pp. 485-488 ◽  
Author(s):  
Alfonso Ruggiero ◽  
M. Zimbone ◽  
Fabrizio Roccaforte ◽  
Sebania Libertino ◽  
Francesco La Via ◽  
...  
Keyword(s):  
Low Temperature ◽  
Deep Level Transient Spectroscopy ◽  
Room Temperature ◽  
Deep Level ◽  
Room Temperature Photoluminescence ◽  
Temperature Range ◽  
Defect Annealing ◽  
Luminescence Peak ◽  
Transient Spectroscopy ◽  
Dlts Spectra

Deep-Level Transient Spectroscopy and room temperature photoluminescence were used to characterise a 6H-SiC epitaxial layer irradiated with 10 MeV C+ and to follow the defect annealing in the temperature range 300-1400 °C. The intensity of luminescence peak at 423 nm, related to band to band transitions, decreases after irradiation and it is slowly recovered after annealing in the temperature range 1000-1400 °C. The DLTS spectra of low temperature annealed samples show the presence of several overlapping traps, which anneal and evolve at high temperatures. After 1200 °C a main level at Ec-0.43 eV (E1/E2) is detected. The comparison between luminescence and DLTS results indicates that the defect associated with the E1/E2 level is mainly responsible for the luminescence quenching after irradiation.

Transverse resistance in HoBa2Cu3O7−δ single crystals

2015 ◽  
Vol 29 (35n36) ◽  
pp. 1550232
Author(s):  
Ruslan V. Vovk ◽  
Georgij Ya. Khadzhai ◽  
Oleksandr V. Dobrovolskiy ◽  
Zarif F. Nazyrov ◽  
Alexander Chroneos
Keyword(s):  
Single Crystals ◽  
Electrical Resistance ◽  
Residual Resistivity ◽  
Variable Range Hopping ◽  
Fluctuation Conductivity ◽  
Hopping Conductivity ◽  
Variable Range ◽  
Temperature Range ◽  
Transverse Resistance ◽  
Semiconductor Character

The transverse electrical resistance of HoBa2Cu3O[Formula: see text] single crystals is investigated in the temperature range [Formula: see text] for optimally-doped [Formula: see text] and oxygen-poor [Formula: see text] samples. With decreasing temperature, the resistivity of the optimally-doped samples has been found to transit from the regime of scattering on phonons and defects to the regime of “semiconductor” character and, near [Formula: see text], of the fluctuation conductivity. The oxygen-poor samples have been revealed to exhibit only a variable range hopping conductivity of “semiconductor” character, which near [Formula: see text] transits into the fluctuation conductivity. A significant anisotropy of the residual resistivity and characteristics of the fluctuation conductivity is observed for samples of both types.

Sign in / Sign up

Export Citation Format

Share Document