Ellipsometric Determination of the Spectra of Adsorbed Molecules

1971 ◽  
Vol 49 (7) ◽  
pp. 1115-1132 ◽  
Author(s):  
M. J. Dignam ◽  
B. Rao ◽  
M. Moskovits ◽  
R. W. Stobie

This paper presents a detailed analysis of the application of ellipsometry to obtaining the optical spectra (principally infrared (i.r.)) of molecules adsorbed on reflecting surfaces. Both external and total internal reflections are considered and the conditions for optimum sensitivity examined. A new empirical quantity, the relative complex optical density, is defined which exhibits thin film properties well, particularly in the case of multiple reflection measurements. An explicit expression is derived for this density function (relating it to the optical constants of the media and other system parameters), which is both reasonably simple and correct to second order terms in the film thickness. It is shown that for thin films, no higher order terms need be included, but that in general the second order term must be retained. Various limiting cases are examined to gain insight into the optical behavior of thin films, and to the same end, model calculations performed for CCl4 physically adsorbed on Ag, Ni, Sb, and Ge. In relation to conventional reflection spectroscopy, ellipsometric spectroscopy is shown to have three major advantages: (1) in general, higher sensitivity to adsorbate properties; (2) very much lower sensitivity to absorption of radiation by the adjacent gas phase; (3) more information, permitting the optical constants and film thickness to be determined. Finally, the practicability of the technique is demonstrated by presenting preliminary results for CH3OH reversibly adsorbed on Ag, showing clearly the C—H stretching bands.

2010 ◽  
Vol 405 (18) ◽  
pp. 3875-3878 ◽  
Author(s):  
Ying Zhou ◽  
Yongyou Geng ◽  
Donghong Gu ◽  
Weibing Gu ◽  
Zhi Jiang

2012 ◽  
Vol 268-270 ◽  
pp. 202-206
Author(s):  
Ying Xu ◽  
Peng Hua Ma ◽  
Mo Ning Liu

The AZO thin films had been prepared on glass substrates by APCVD process .The transmittance spectra of AZO thin films was measured with S-600 UV-Vis spectrophotometer . The visible light transmittance values of AZO thin films are about 85% and the thickness of the thin films well-distributed by the transmittance spectra of AZO films. Using the envelope method, the film thickness d is calculated about 964.43nm and the discrepancy is only 0.56% compared with the result of instrument measurements. The curve about the refractive index n with the incident wavelength is consistent with the reported literature results. The envelope method is suitable for the optical constants processing of some similar AZO films where exist weak absorption ranges (T≥0.4).


2016 ◽  
Vol 16 (02) ◽  
pp. 1650028 ◽  
Author(s):  
A. A. A. Darwish ◽  
F. S. Abu-Samaha ◽  
Z. Mohamed ◽  
M. M. El-Nahass

TiO2 powder was found to be polycrystalline with rutile system. TiO2 films were deposited on quartz substrates by a sol–gel spin coating technique. X-ray diffraction and transmission electron microscope results have confirmed that the TiO2 films have nanostructure nature. It is found the crystallite size increased with annealing temperature. The optical constants of nanostructured TiO2 films were found to be independent of film thickness in the range from 100[Formula: see text]nm to 500[Formula: see text]nm. It is found that the optical constants and the dielectric constant of the thin films were all affected by annealing temperature. The existing allowed optical transitions in the as-deposited and annealed films were found to be direct and indirect transitions. Finally, the bandgaps of the as-deposited film were found to decrease with the annealing temperature.


1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.


Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 510
Author(s):  
Yongqiang Pan ◽  
Huan Liu ◽  
Zhuoman Wang ◽  
Jinmei Jia ◽  
Jijie Zhao

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.


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