scholarly journals Optical Constant and Conformality Analysis of SiO2 Thin Films Deposited on Linear Array Microstructure Substrate by PECVD

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 510
Author(s):  
Yongqiang Pan ◽  
Huan Liu ◽  
Zhuoman Wang ◽  
Jinmei Jia ◽  
Jijie Zhao
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Deposition Rate ◽  
Optical Constant ◽  
Photoelectron Spectroscopy ◽  
Linear Array ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
X Ray ◽  
Sio2 Thin Film

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.

Growth of Highly Oriented Zinc Oxide Thin Films by Plasma Enhanced Chemical Vapor Deposition

2006 ◽  
Vol 321-323 ◽  
pp. 1687-1690 ◽  
Author(s):  
Hee Joon Kim ◽  
Dong Young Jang ◽  
Prem Kumar Shishodia ◽  
Akira Yoshida
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Visible Region ◽  
Chemical Vapor ◽  
Zno Films ◽  
X Ray ◽  
Crystalline Films

In the paper, zinc oxide (ZnO) thin films are deposited by plasma enhanced chemical vapor deposition (PECVD) at different substrate temperatures. The ZnO films are characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The analysis results indicate that highly crystalline films with high orientation can be obtained at a substrate temperature of 300 oC with 50 ml/min flow rate from Diethylzinc (DEZ). Furthermore, the investigation of optical property shows that ZnO films are transparent, and the peak transmittance in the visible region is as high as 85%.

Effects of Substrate Temperature on the Properties of Silicon Oxide Films by PECVD

2012 ◽  
Vol 198-199 ◽  
pp. 28-31
Author(s):  
Chun Ya Li ◽  
Xi Feng Li ◽  
Long Long Chen ◽  
Ji Feng Shi ◽  
Jian Hua Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Deposition Temperature ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
X Ray ◽  
Glass Substrates

Under different growth conditions, silicon Oxide (SiOx) thin films were deposited successfully on Si (100) substrates and glass substrates by plasma enhanced chemical vapor deposition (PECVD). The thickness, refractive index and growth rate of the thin films were tested by ellipsometer. The effects of deposition temperature on the structure and properties of SiOx films were studied using X ray diffraction (XRD), X ray photoelectron spectroscopy (XPS) and UV-Visible spectroscopy. The results show that the SiOx films were amorphous at different deposition temperature. The peaks of Si2p and O1s shifted to higher binding energy with temperature increasing. The SiOx films had high transmissivity at the range of 400-900nm. By analyzing the observation and data, the influence of deposition parameters on the electrical properties and interface characteristics of SiOx thin film prepared by PECVD is systematically discussed. At last, SiOx thin film with excellent electrical properties and good interface characteristic is prepared under the relatively optimum parameters.

Effects of Irradiation by Low Energy Nitrogen Ions on Carbon Nitride Thin Films

2002 ◽  
Vol 750 ◽  
Author(s):  
Yuka Nasu ◽  
Masami Aono ◽  
Shinichiro Aizawa ◽  
Nobuaki Kitazawa ◽  
Yoshihisa Watanabe
Keyword(s):  
Thin Films ◽  
Nitrogen Content ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Chemical Vapor ◽  
Low Energy ◽  
Carbon Filament ◽  
X Ray ◽  
Nitrogen Ions

ABSTRACTCarbon nitride (CNx) thin films have been prepared by hot carbon filament chemical vapor deposition, and the nitrogen content in the films is approximately 0.05. The CNx films have been irradiated by 0.1 keV nitrogen ions to increase the nitrogen content after deposition. The nitrogen content in the CNx films was obtained with X-ray photoelectron spectroscopy. Scanning electron microscopy was employed to study microstructures of the films. The experimental results show that nitrogen ions are chemically combined with the CNx films and as a result the nitrogen content increases up to approximately 0.30. Furthermore, it is found that nitrogen ions change the film microstructures and sputter the surfaces of CNx films.

Plasma-Enhanced Metalorganic Chemical Vapor deposition of Lipon Thin Films

2011 ◽  
Vol 1313 ◽  
Author(s):  
Lamartine Meda
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Ionic Conductivity ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Metalorganic Chemical Vapor Deposition ◽  
Electrochemical Impedance ◽  
Chemical Vapor ◽  
X Ray ◽  
Metalorganic Chemical

ABSTRACTLithium phosphorus oxynitride (Lipon) thin films have been deposited by a plasmaenhanced metalorganic chemical vapor deposition (PE-MOCVD) method using triethyl phosphate [(CH2CH3)3PO4] and lithium tert-butoxide [(LiOC(CH3)3] precursors. Growth rates were between 100 and 415 Å/min, and thicknesses ranged from 1 to 2.5 μm. X-ray powder diffraction showed that the films were amorphous, and X-ray photoelectron spectroscopy revealed approximately 6.9 at.% carbon in the films. The ionic conductivity of Lipon was measured using electrochemical impedance spectroscopy (EIS) and approximately 1.02 μS/cm was obtained, which is consistent with the ionic conductivity of Lipon deposited by radio frequency magnetron sputtering of Li3PO4 targets. An all-solid-state thin-film lithium microbattery such as Li/Lipon/LiCoO2/Au/substrate was successfully fabricated with Lipon deposited by PE-MOCVD. The battery has a capacity of ca. 22 μAh/cm2μm.

scholarly journals Enhancement of Electrical Property of Carbon Nanotube by Silicon Incorporation

2020 ◽  
Vol 10 (1) ◽  
pp. 62-65
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Binding Energies ◽  
Xps Spectra ◽  
X Ray ◽  
Conductivity Increase ◽  
Vapor Deposition Technique ◽  
Si Content

Silicon incorporated carbon nano tube has been synthesized by radio frequency plasma enhanced chemical vapor deposition technique with acetylene gas. Tetraethyl orthosilicate solution was used for the synthesis of silicon incorporation in the CNT thin films. Energy dispersive X-ray analysis shows that the Si atomic percentage in the CNT thin films varied from 0 % to 3.82 %. The different chemical binding energies of carbon and silicon were analyzed from X-ray photoelectron spectroscopy spectra. In the XPS spectra, the peaks at ~531 eV, ~ 285 eV, ~151 eV and ~100 eV are the contributions from O 1s, C 1s, Si 2s and Si 2p respectively. Nanostructure morphologies of the Si-CNT thin films have been analyzed by field emission scanning electron microscopy. The length of the silicon incorporated carbon nano tubes ~100 nm and corresponding diameter ~20 nm. The increase of atomic percentage of Si in the CNT thin films, room temperature electrical conductivity increases. The electrical conductivity increase from 3.87x103 to 4.49x104 S cm-1 as the silicon atomic percentage in the CNT thin films increases from 0 to 3.82 % respectively. This study showed that the Si-CNTs thin films potentially useful in electrical application of varying its conductivity by changing the Si content independently from other parameters

Synthesizing Nanocrystalline Carbon Thin Films by Hot Filament Chemical Vapor Deposition and Controlling Their Microstructure

2002 ◽  
Vol 17 (7) ◽  
pp. 1820-1833 ◽  
Author(s):  
S. Gupta ◽  
B. R. Weiner ◽  
G. Morell
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Noble Gas ◽  
Ion Beam ◽  
Chemical Vapor ◽  
X Ray ◽  
Hot Filament ◽  
Methane Concentrations

Nanocrystalline carbon (n-C) thin films were deposited on Mo substrates using methane (CH4) and hydrogen (H2) by the hot-filament chemical vapor deposition (HFCVD) technique. Process parameters relevant to the secondary nucleation rate were systematically varied (0.3–2.0% methane concentrations, 700–900 °C deposition temperatures, and continuous forward and reverse bias during growth) to study the corresponding variations in film microstructure. Standard nondestructive complementary characterization tools such as scanning electron microscopy, x-ray diffraction, atomic force microscopy, Raman spectroscopy, and x-ray photoelectron spectroscopy were utilized to obtain a coherent and comprehensive picture of the microstructure of these films. Through these studies we obtained an integral picture of the material grown and learned how to control key material properties such as surface morphology (faceted versus evenly smooth), grain size (microcrystalline versus nanocrystalline), surface roughness (from rough 150 rms to smooth 70 rms), and bonding configuration (sp3 C versus sp2 C), which result in physical properties relevant for several technological applications. These findings also indicate that there exist fundamental differences between HFCVD and microwave CVD (MWCVD) for methane concentrations above 1%, whereas some similarities are drawn among films grown by ion-beam assisted deposition, HFCVD assisted by low-energy particle bombardment, and MWCVD using noble gas in replacement of traditionally used hydrogen.

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